ITMI20022192A1 - Struttura per modificare un blocco di celle di memoria in un dispositivo di memoria flash con riduzione delle operazioni di cancellazione e di programmazione. - Google Patents

Struttura per modificare un blocco di celle di memoria in un dispositivo di memoria flash con riduzione delle operazioni di cancellazione e di programmazione.

Info

Publication number
ITMI20022192A1
ITMI20022192A1 IT002192A ITMI20022192A ITMI20022192A1 IT MI20022192 A1 ITMI20022192 A1 IT MI20022192A1 IT 002192 A IT002192 A IT 002192A IT MI20022192 A ITMI20022192 A IT MI20022192A IT MI20022192 A1 ITMI20022192 A1 IT MI20022192A1
Authority
IT
Italy
Prior art keywords
cancellation
modify
reduction
block
programming operations
Prior art date
Application number
IT002192A
Other languages
English (en)
Inventor
Malfa Antonino La
Salvatore Poli
Paolino Schillaci
Original Assignee
Simicroelectronics S R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simicroelectronics S R L filed Critical Simicroelectronics S R L
Priority to IT002192A priority Critical patent/ITMI20022192A1/it
Priority to US10/686,552 priority patent/US6922362B2/en
Publication of ITMI20022192A1 publication Critical patent/ITMI20022192A1/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/12Programming voltage switching circuits
IT002192A 2002-10-16 2002-10-16 Struttura per modificare un blocco di celle di memoria in un dispositivo di memoria flash con riduzione delle operazioni di cancellazione e di programmazione. ITMI20022192A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT002192A ITMI20022192A1 (it) 2002-10-16 2002-10-16 Struttura per modificare un blocco di celle di memoria in un dispositivo di memoria flash con riduzione delle operazioni di cancellazione e di programmazione.
US10/686,552 US6922362B2 (en) 2002-10-16 2003-10-15 Structure for updating a block of memory cells in a flash memory device with erase and program operation reduction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002192A ITMI20022192A1 (it) 2002-10-16 2002-10-16 Struttura per modificare un blocco di celle di memoria in un dispositivo di memoria flash con riduzione delle operazioni di cancellazione e di programmazione.

Publications (1)

Publication Number Publication Date
ITMI20022192A1 true ITMI20022192A1 (it) 2004-04-17

Family

ID=32697270

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002192A ITMI20022192A1 (it) 2002-10-16 2002-10-16 Struttura per modificare un blocco di celle di memoria in un dispositivo di memoria flash con riduzione delle operazioni di cancellazione e di programmazione.

Country Status (2)

Country Link
US (1) US6922362B2 (it)
IT (1) ITMI20022192A1 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7093091B2 (en) * 2003-09-26 2006-08-15 Atmel Corporation Selectable block protection for non-volatile memory
WO2005093760A1 (ja) * 2004-03-26 2005-10-06 Spansion Llc 半導体装置および半導体装置にデータを書き込む方法
WO2006059374A1 (ja) * 2004-11-30 2006-06-08 Spansion Llc 半導体装置および半導体装置の制御方法
US7890721B2 (en) * 2005-02-16 2011-02-15 Atmel Corporation Implementation of integrated status of a protection register word in a protection register array
KR100702310B1 (ko) * 2005-07-21 2007-03-30 주식회사 하이닉스반도체 비휘발성 래치 회로 및 이를 포함하는 시스템 온 칩
FR2894710A1 (fr) * 2005-12-14 2007-06-15 St Microelectronics Sa Procede et dispositif de verification de l'execution d'une commande d'ecriture dans une memoire
NZ548528A (en) * 2006-07-14 2009-02-28 Arc Innovations Ltd Text encoding system and method
US9627081B2 (en) * 2007-10-05 2017-04-18 Kinglite Holdings Inc. Manufacturing mode for secure firmware using lock byte
CN105607861A (zh) * 2014-11-24 2016-05-25 中兴通讯股份有限公司 数据处理方法及装置
JP2017045415A (ja) * 2015-08-28 2017-03-02 株式会社東芝 メモリシステム
US11823739B2 (en) 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits
CN115240735A (zh) * 2020-04-06 2022-10-25 昕原半导体(上海)有限公司 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4763305A (en) * 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
US5754567A (en) * 1996-10-15 1998-05-19 Micron Quantum Devices, Inc. Write reduction in flash memory systems through ECC usage
US6157570A (en) * 1999-02-04 2000-12-05 Tower Semiconductor Ltd. Program/erase endurance of EEPROM memory cells

Also Published As

Publication number Publication date
US20040141379A1 (en) 2004-07-22
US6922362B2 (en) 2005-07-26

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