ITMI20011812A0 - Metodo di lettura e di ripristino di dati contenuti in una cella di memoria ferroelettrica - Google Patents

Metodo di lettura e di ripristino di dati contenuti in una cella di memoria ferroelettrica

Info

Publication number
ITMI20011812A0
ITMI20011812A0 IT2001MI001812A ITMI20011812A ITMI20011812A0 IT MI20011812 A0 ITMI20011812 A0 IT MI20011812A0 IT 2001MI001812 A IT2001MI001812 A IT 2001MI001812A IT MI20011812 A ITMI20011812 A IT MI20011812A IT MI20011812 A0 ITMI20011812 A0 IT MI20011812A0
Authority
IT
Italy
Prior art keywords
restoration
reading
memory cell
data contained
ferroelectric memory
Prior art date
Application number
IT2001MI001812A
Other languages
English (en)
Inventor
Nicolas Demange
Salvatore Torrisi
Giampiero Sberno
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT2001MI001812A priority Critical patent/ITMI20011812A1/it
Publication of ITMI20011812A0 publication Critical patent/ITMI20011812A0/it
Priority to US10/226,642 priority patent/US6795330B2/en
Publication of ITMI20011812A1 publication Critical patent/ITMI20011812A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
IT2001MI001812A 2001-08-24 2001-08-24 Metodo di lettura e di ripristino di dati contenuti in una cella di memoria ferroelettrica ITMI20011812A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT2001MI001812A ITMI20011812A1 (it) 2001-08-24 2001-08-24 Metodo di lettura e di ripristino di dati contenuti in una cella di memoria ferroelettrica
US10/226,642 US6795330B2 (en) 2001-08-24 2002-08-23 Method of reading and restoring data stored in a ferroelectric memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001MI001812A ITMI20011812A1 (it) 2001-08-24 2001-08-24 Metodo di lettura e di ripristino di dati contenuti in una cella di memoria ferroelettrica

Publications (2)

Publication Number Publication Date
ITMI20011812A0 true ITMI20011812A0 (it) 2001-08-24
ITMI20011812A1 ITMI20011812A1 (it) 2003-02-24

Family

ID=11448304

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001MI001812A ITMI20011812A1 (it) 2001-08-24 2001-08-24 Metodo di lettura e di ripristino di dati contenuti in una cella di memoria ferroelettrica

Country Status (2)

Country Link
US (1) US6795330B2 (it)
IT (1) ITMI20011812A1 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20020673A1 (it) * 2002-03-29 2003-09-29 St Microelectronics Srl Metodo e relativo circuito di accesso a locazioni di una memoria ferroelettrica
JP3783696B2 (ja) * 2003-04-10 2006-06-07 セイコーエプソン株式会社 強誘電体記憶装置のデータ記憶方法
JP4186768B2 (ja) * 2003-09-16 2008-11-26 沖電気工業株式会社 マルチポート半導体メモリ
KR100568866B1 (ko) * 2004-02-09 2006-04-10 삼성전자주식회사 강유전체 메모리에서 기준전압 발생장치 및 그에 따른구동방법
US7622919B2 (en) * 2006-07-31 2009-11-24 Schlumberger Technology Corporation Nuclear magnetic resonance measurement techniques in non-uniform fields
US10381075B2 (en) 2017-12-14 2019-08-13 Micron Technology, Inc. Techniques to access a self-selecting memory device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
US5592410A (en) * 1995-04-10 1997-01-07 Ramtron International Corporation Circuit and method for reducing a compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로

Also Published As

Publication number Publication date
ITMI20011812A1 (it) 2003-02-24
US20030058702A1 (en) 2003-03-27
US6795330B2 (en) 2004-09-21

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