IT8920962A0 - Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet). - Google Patents

Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet).

Info

Publication number
IT8920962A0
IT8920962A0 IT8920962A IT2096289A IT8920962A0 IT 8920962 A0 IT8920962 A0 IT 8920962A0 IT 8920962 A IT8920962 A IT 8920962A IT 2096289 A IT2096289 A IT 2096289A IT 8920962 A0 IT8920962 A0 IT 8920962A0
Authority
IT
Italy
Prior art keywords
mosfet
cell
field effect
effect transistor
insulated gate
Prior art date
Application number
IT8920962A
Other languages
English (en)
Other versions
IT1230901B (it
Inventor
Jong Oh Kim
Jin Hyung Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of IT8920962A0 publication Critical patent/IT8920962A0/it
Application granted granted Critical
Publication of IT1230901B publication Critical patent/IT1230901B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8920962A 1988-06-27 1989-06-22 Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet). IT1230901B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880007747A KR910004318B1 (ko) 1988-06-27 1988-06-27 수직형 d mos 트랜지스터의 셀

Publications (2)

Publication Number Publication Date
IT8920962A0 true IT8920962A0 (it) 1989-06-22
IT1230901B IT1230901B (it) 1991-11-08

Family

ID=19275535

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8920962A IT1230901B (it) 1988-06-27 1989-06-22 Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet).

Country Status (6)

Country Link
US (1) US4982249A (it)
JP (1) JPH0671088B2 (it)
KR (1) KR910004318B1 (it)
DE (1) DE3920010C2 (it)
IT (1) IT1230901B (it)
NL (1) NL191913C (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192989A (en) * 1989-11-28 1993-03-09 Nissan Motor Co., Ltd. Lateral dmos fet device with reduced on resistance
US5139621A (en) * 1990-06-11 1992-08-18 Mobil Oil Corporation Azeotropic distillation process for recovery of diamondoid compounds from hydrocarbon streams
EP0492991B1 (en) * 1990-12-21 1999-06-23 SILICONIX Incorporated Method of fabricating double diffused integrated MOSFET cells
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
US5323036A (en) * 1992-01-21 1994-06-21 Harris Corporation Power FET with gate segments covering drain regions disposed in a hexagonal pattern
US5763914A (en) * 1997-07-16 1998-06-09 Megamos Corporation Cell topology for power transistors with increased packing density
US9484451B2 (en) * 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4705759B1 (en) * 1978-10-13 1995-02-14 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
FR2531572A1 (fr) * 1982-08-09 1984-02-10 Radiotechnique Compelec Dispositif mos a structure plane multicellulaire
FR2537780A1 (fr) * 1982-12-08 1984-06-15 Radiotechnique Compelec Dispositif mos fet de puissance a structure plane multicellulaire
JPS60130508A (ja) * 1983-12-20 1985-07-12 Lion Corp 毛髪化粧料組成物
DE3688057T2 (de) * 1986-01-10 1993-10-07 Gen Electric Halbleitervorrichtung und Methode zur Herstellung.
US4823176A (en) * 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area

Also Published As

Publication number Publication date
KR900001039A (ko) 1990-01-31
NL8901599A (nl) 1990-01-16
JPH0671088B2 (ja) 1994-09-07
DE3920010C2 (de) 1993-10-07
NL191913C (nl) 1996-10-04
DE3920010A1 (de) 1989-12-28
NL191913B (nl) 1996-06-03
US4982249A (en) 1991-01-01
IT1230901B (it) 1991-11-08
JPH0298172A (ja) 1990-04-10
KR910004318B1 (ko) 1991-06-25

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628