NL191913C - Dubbel gediffundeerde mosfet cel. - Google Patents
Dubbel gediffundeerde mosfet cel.Info
- Publication number
- NL191913C NL191913C NL8901599A NL8901599A NL191913C NL 191913 C NL191913 C NL 191913C NL 8901599 A NL8901599 A NL 8901599A NL 8901599 A NL8901599 A NL 8901599A NL 191913 C NL191913 C NL 191913C
- Authority
- NL
- Netherlands
- Prior art keywords
- double diffused
- mosfet cell
- diffused mosfet
- cell
- double
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880007747A KR910004318B1 (ko) | 1988-06-27 | 1988-06-27 | 수직형 d mos 트랜지스터의 셀 |
| KR880007747 | 1988-06-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8901599A NL8901599A (nl) | 1990-01-16 |
| NL191913B NL191913B (nl) | 1996-06-03 |
| NL191913C true NL191913C (nl) | 1996-10-04 |
Family
ID=19275535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8901599A NL191913C (nl) | 1988-06-27 | 1989-06-23 | Dubbel gediffundeerde mosfet cel. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4982249A (xx) |
| JP (1) | JPH0671088B2 (xx) |
| KR (1) | KR910004318B1 (xx) |
| DE (1) | DE3920010C2 (xx) |
| IT (1) | IT1230901B (xx) |
| NL (1) | NL191913C (xx) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192989A (en) * | 1989-11-28 | 1993-03-09 | Nissan Motor Co., Ltd. | Lateral dmos fet device with reduced on resistance |
| US5139621A (en) * | 1990-06-11 | 1992-08-18 | Mobil Oil Corporation | Azeotropic distillation process for recovery of diamondoid compounds from hydrocarbon streams |
| US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
| EP0492991B1 (en) * | 1990-12-21 | 1999-06-23 | SILICONIX Incorporated | Method of fabricating double diffused integrated MOSFET cells |
| US5304831A (en) * | 1990-12-21 | 1994-04-19 | Siliconix Incorporated | Low on-resistance power MOS technology |
| US5323036A (en) * | 1992-01-21 | 1994-06-21 | Harris Corporation | Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
| US5763914A (en) * | 1997-07-16 | 1998-06-09 | Megamos Corporation | Cell topology for power transistors with increased packing density |
| US9484451B2 (en) * | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
| US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| EP3183754A4 (en) | 2014-08-19 | 2018-05-02 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
| US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
| FR2531572A1 (fr) * | 1982-08-09 | 1984-02-10 | Radiotechnique Compelec | Dispositif mos a structure plane multicellulaire |
| FR2537780A1 (fr) * | 1982-12-08 | 1984-06-15 | Radiotechnique Compelec | Dispositif mos fet de puissance a structure plane multicellulaire |
| JPS60130508A (ja) * | 1983-12-20 | 1985-07-12 | Lion Corp | 毛髪化粧料組成物 |
| DE3688057T2 (de) * | 1986-01-10 | 1993-10-07 | Gen Electric | Halbleitervorrichtung und Methode zur Herstellung. |
| US4823176A (en) * | 1987-04-03 | 1989-04-18 | General Electric Company | Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area |
-
1988
- 1988-06-27 KR KR1019880007747A patent/KR910004318B1/ko not_active IP Right Cessation
-
1989
- 1989-06-09 US US07/364,262 patent/US4982249A/en not_active Expired - Lifetime
- 1989-06-20 DE DE3920010A patent/DE3920010C2/de not_active Expired - Fee Related
- 1989-06-22 JP JP1158467A patent/JPH0671088B2/ja not_active Expired - Fee Related
- 1989-06-22 IT IT8920962A patent/IT1230901B/it active
- 1989-06-23 NL NL8901599A patent/NL191913C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE3920010C2 (de) | 1993-10-07 |
| JPH0298172A (ja) | 1990-04-10 |
| JPH0671088B2 (ja) | 1994-09-07 |
| KR900001039A (ko) | 1990-01-31 |
| NL191913B (nl) | 1996-06-03 |
| IT8920962A0 (it) | 1989-06-22 |
| KR910004318B1 (ko) | 1991-06-25 |
| IT1230901B (it) | 1991-11-08 |
| US4982249A (en) | 1991-01-01 |
| DE3920010A1 (de) | 1989-12-28 |
| NL8901599A (nl) | 1990-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20080101 |