IT7926642A0 - Elemento solare di materiale semiconduttore. - Google Patents

Elemento solare di materiale semiconduttore.

Info

Publication number
IT7926642A0
IT7926642A0 IT7926642A IT2664279A IT7926642A0 IT 7926642 A0 IT7926642 A0 IT 7926642A0 IT 7926642 A IT7926642 A IT 7926642A IT 2664279 A IT2664279 A IT 2664279A IT 7926642 A0 IT7926642 A0 IT 7926642A0
Authority
IT
Italy
Prior art keywords
semiconductor material
element made
solar element
solar
semiconductor
Prior art date
Application number
IT7926642A
Other languages
English (en)
Other versions
IT1125514B (it
Inventor
Hezel Rudolf
Original Assignee
Hezel Rudolf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2846096A external-priority patent/DE2846096C2/de
Priority claimed from DE19782853412 external-priority patent/DE2853412A1/de
Application filed by Hezel Rudolf filed Critical Hezel Rudolf
Publication of IT7926642A0 publication Critical patent/IT7926642A0/it
Application granted granted Critical
Publication of IT1125514B publication Critical patent/IT1125514B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
IT26642/79A 1978-10-23 1979-10-19 Elemento solare di materiale semiconduttore IT1125514B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2846096A DE2846096C2 (de) 1978-10-23 1978-10-23 Solarzelle aus Halbleitermaterial
DE19782853412 DE2853412A1 (de) 1978-12-11 1978-12-11 Solarzelle aus halbleitermaterial

Publications (2)

Publication Number Publication Date
IT7926642A0 true IT7926642A0 (it) 1979-10-19
IT1125514B IT1125514B (it) 1986-05-14

Family

ID=25776190

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26642/79A IT1125514B (it) 1978-10-23 1979-10-19 Elemento solare di materiale semiconduttore

Country Status (5)

Country Link
US (1) US4253881A (it)
AU (1) AU524635B2 (it)
FR (1) FR2440081A1 (it)
GB (1) GB2034973B (it)
IT (1) IT1125514B (it)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642377A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Ultraviolet ray erasable type rewritable read-only memory
DE3135933A1 (de) * 1980-09-26 1982-05-19 Unisearch Ltd., Kensington, New South Wales Solarzelle und verfahren zu ihrer herstellung
EP0078541B1 (en) * 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
JPS58220477A (ja) * 1982-06-16 1983-12-22 Japan Solar Energ Kk 太陽電池の製造方法
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
US4589191A (en) * 1983-10-20 1986-05-20 Unisearch Limited Manufacture of high efficiency solar cells
DE3420887A1 (de) * 1984-06-05 1985-12-05 Telefunken electronic GmbH, 7100 Heilbronn Solarzelle
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
US4901133A (en) * 1986-04-02 1990-02-13 Texas Instruments Incorporated Multilayer semi-insulating film for hermetic wafer passivation and method for making same
US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
DE3712503A1 (de) * 1987-04-13 1988-11-03 Nukem Gmbh Solarzelle
US5055908A (en) * 1987-07-27 1991-10-08 Texas Instruments Incorporated Semiconductor circuit having metallization with TiW
DE3725346A1 (de) * 1987-07-30 1989-02-09 Nukem Gmbh Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle
DE3815512C2 (de) * 1988-05-06 1994-07-28 Deutsche Aerospace Solarzelle und Verfahren zu ihrer Herstellung
EP0460287A1 (de) * 1990-05-31 1991-12-11 Siemens Aktiengesellschaft Neuartige Chalkopyrit-Solarzelle
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
DE10152707B4 (de) * 2001-10-19 2004-08-26 Rwe Schott Solar Gmbh Verfahren zur Herstellung einer Solarzelle
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
NL1029647C2 (nl) * 2005-07-29 2007-01-30 Otb Group Bv Werkwijze voor het passiveren van ten minste een deel van een substraatoppervlak.
US20090038669A1 (en) * 2006-09-20 2009-02-12 Translucent Photonics, Inc. Thin Film Solar Cell III
TW200929575A (en) * 2007-12-28 2009-07-01 Ind Tech Res Inst A passivation layer structure of the solar cell and the method of the fabricating
CN101999176A (zh) * 2008-04-09 2011-03-30 应用材料股份有限公司 太阳能电池的氮化势垒层
EP2195853B1 (en) * 2008-04-17 2015-12-16 LG Electronics Inc. Solar cell and method of manufacturing the same
CN102150278A (zh) 2008-06-11 2011-08-10 因特瓦克公司 使用注入和退火方法的太阳能电池-选择性发射极的形成
US20100037948A1 (en) * 2008-08-14 2010-02-18 Integrated Digital Technologies, Inc. Solar cells provided with color modulation and method for fabricating the same
US8822815B2 (en) * 2008-11-04 2014-09-02 Northrop Grumman Systems Corporation Photovoltaic silicon solar cells
DE102008055036A1 (de) * 2008-12-19 2010-07-08 Q-Cells Se Solarzelle
DE102008055028A1 (de) 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
JP2012521642A (ja) * 2009-03-20 2012-09-13 インテバック・インコーポレイテッド 太陽電池及びその製造方法
FR2946459B1 (fr) * 2009-06-05 2011-08-05 Centre Nat Etd Spatiales Element de structure pour panneau solaire, et structure comportant un tel element
DE102009024598A1 (de) * 2009-06-10 2011-01-05 Institut Für Solarenergieforschung Gmbh Solarzelle mit Kontaktstruktur mit geringen Rekombinationsverlusten sowie Herstellungsverfahren für solche Solarzellen
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8603900B2 (en) * 2009-10-27 2013-12-10 Varian Semiconductor Equipment Associates, Inc. Reducing surface recombination and enhancing light trapping in solar cells
US8338211B2 (en) 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US9520531B2 (en) 2010-07-27 2016-12-13 Amtech Systems, Inc. Systems and methods for depositing and charging solar cell layers
US20120024336A1 (en) * 2010-07-27 2012-02-02 Jeong-Mo Hwang Charge control of solar cell passivation layers
SG11201402177XA (en) 2011-11-08 2014-06-27 Intevac Inc Substrate processing system and method
US20130284254A1 (en) * 2012-04-25 2013-10-31 The Boeing Company Solar cells including low recombination electrical contacts and systems and methods of forming the same
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
US20140283906A1 (en) * 2013-03-21 2014-09-25 California Institute Of Technology System and method for controlling an inversion layer in a photovoltaic device
US9466755B2 (en) * 2014-10-30 2016-10-11 International Business Machines Corporation MIS-IL silicon solar cell with passivation layer to induce surface inversion

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2230086A1 (en) * 1973-05-14 1974-12-13 Centre Nat Etd Spatiales Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
US4090213A (en) * 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication

Also Published As

Publication number Publication date
IT1125514B (it) 1986-05-14
AU524635B2 (en) 1982-09-23
US4253881A (en) 1981-03-03
GB2034973B (en) 1983-01-06
GB2034973A (en) 1980-06-11
FR2440081B1 (it) 1983-07-22
FR2440081A1 (fr) 1980-05-23
AU5202279A (en) 1980-05-01

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19951027