IT1125514B - Elemento solare di materiale semiconduttore - Google Patents

Elemento solare di materiale semiconduttore

Info

Publication number
IT1125514B
IT1125514B IT26642/79A IT2664279A IT1125514B IT 1125514 B IT1125514 B IT 1125514B IT 26642/79 A IT26642/79 A IT 26642/79A IT 2664279 A IT2664279 A IT 2664279A IT 1125514 B IT1125514 B IT 1125514B
Authority
IT
Italy
Prior art keywords
semiconductive material
solar element
solar
semiconductive
Prior art date
Application number
IT26642/79A
Other languages
English (en)
Other versions
IT7926642A0 (it
Inventor
Rudolf Hezel
Original Assignee
Rudolf Hezel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2846096A external-priority patent/DE2846096C2/de
Priority claimed from DE19782853412 external-priority patent/DE2853412A1/de
Application filed by Rudolf Hezel filed Critical Rudolf Hezel
Publication of IT7926642A0 publication Critical patent/IT7926642A0/it
Application granted granted Critical
Publication of IT1125514B publication Critical patent/IT1125514B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
IT26642/79A 1978-10-23 1979-10-19 Elemento solare di materiale semiconduttore IT1125514B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2846096A DE2846096C2 (de) 1978-10-23 1978-10-23 Solarzelle aus Halbleitermaterial
DE19782853412 DE2853412A1 (de) 1978-12-11 1978-12-11 Solarzelle aus halbleitermaterial

Publications (2)

Publication Number Publication Date
IT7926642A0 IT7926642A0 (it) 1979-10-19
IT1125514B true IT1125514B (it) 1986-05-14

Family

ID=25776190

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26642/79A IT1125514B (it) 1978-10-23 1979-10-19 Elemento solare di materiale semiconduttore

Country Status (5)

Country Link
US (1) US4253881A (it)
AU (1) AU524635B2 (it)
FR (1) FR2440081A1 (it)
GB (1) GB2034973B (it)
IT (1) IT1125514B (it)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642377A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Ultraviolet ray erasable type rewritable read-only memory
DE3135933A1 (de) * 1980-09-26 1982-05-19 Unisearch Ltd., Kensington, New South Wales Solarzelle und verfahren zu ihrer herstellung
EP0078541B1 (en) * 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
JPS58220477A (ja) * 1982-06-16 1983-12-22 Japan Solar Energ Kk 太陽電池の製造方法
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
US4589191A (en) * 1983-10-20 1986-05-20 Unisearch Limited Manufacture of high efficiency solar cells
DE3420887A1 (de) * 1984-06-05 1985-12-05 Telefunken electronic GmbH, 7100 Heilbronn Solarzelle
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
US4901133A (en) * 1986-04-02 1990-02-13 Texas Instruments Incorporated Multilayer semi-insulating film for hermetic wafer passivation and method for making same
US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
DE3712503A1 (de) * 1987-04-13 1988-11-03 Nukem Gmbh Solarzelle
US5055908A (en) * 1987-07-27 1991-10-08 Texas Instruments Incorporated Semiconductor circuit having metallization with TiW
DE3725346A1 (de) * 1987-07-30 1989-02-09 Nukem Gmbh Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle
DE3815512C2 (de) * 1988-05-06 1994-07-28 Deutsche Aerospace Solarzelle und Verfahren zu ihrer Herstellung
EP0460287A1 (de) * 1990-05-31 1991-12-11 Siemens Aktiengesellschaft Neuartige Chalkopyrit-Solarzelle
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
DE10152707B4 (de) * 2001-10-19 2004-08-26 Rwe Schott Solar Gmbh Verfahren zur Herstellung einer Solarzelle
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
NL1029647C2 (nl) * 2005-07-29 2007-01-30 Otb Group Bv Werkwijze voor het passiveren van ten minste een deel van een substraatoppervlak.
US20090038669A1 (en) * 2006-09-20 2009-02-12 Translucent Photonics, Inc. Thin Film Solar Cell III
TW200929575A (en) * 2007-12-28 2009-07-01 Ind Tech Res Inst A passivation layer structure of the solar cell and the method of the fabricating
TW201007956A (en) * 2008-04-09 2010-02-16 Applied Materials Inc Nitrided barrier layers for solar cells
US20090260685A1 (en) * 2008-04-17 2009-10-22 Daeyong Lee Solar cell and method of manufacturing the same
CN102099923B (zh) 2008-06-11 2016-04-27 因特瓦克公司 使用注入的太阳能电池制作
US20100037948A1 (en) * 2008-08-14 2010-02-18 Integrated Digital Technologies, Inc. Solar cells provided with color modulation and method for fabricating the same
US8822815B2 (en) * 2008-11-04 2014-09-02 Northrop Grumman Systems Corporation Photovoltaic silicon solar cells
DE102008064685A1 (de) 2008-12-19 2010-12-16 Q-Cells Se Solarzelle
DE102008055028A1 (de) 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
US20110162703A1 (en) * 2009-03-20 2011-07-07 Solar Implant Technologies, Inc. Advanced high efficientcy crystalline solar cell fabrication method
FR2946459B1 (fr) * 2009-06-05 2011-08-05 Centre Nat Etd Spatiales Element de structure pour panneau solaire, et structure comportant un tel element
DE102009024598A1 (de) * 2009-06-10 2011-01-05 Institut Für Solarenergieforschung Gmbh Solarzelle mit Kontaktstruktur mit geringen Rekombinationsverlusten sowie Herstellungsverfahren für solche Solarzellen
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8603900B2 (en) * 2009-10-27 2013-12-10 Varian Semiconductor Equipment Associates, Inc. Reducing surface recombination and enhancing light trapping in solar cells
US20120024336A1 (en) * 2010-07-27 2012-02-02 Jeong-Mo Hwang Charge control of solar cell passivation layers
US9520531B2 (en) 2010-07-27 2016-12-13 Amtech Systems, Inc. Systems and methods for depositing and charging solar cell layers
US8338211B2 (en) 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
US20130284254A1 (en) * 2012-04-25 2013-10-31 The Boeing Company Solar cells including low recombination electrical contacts and systems and methods of forming the same
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
US20140283906A1 (en) * 2013-03-21 2014-09-25 California Institute Of Technology System and method for controlling an inversion layer in a photovoltaic device
US9466755B2 (en) * 2014-10-30 2016-10-11 International Business Machines Corporation MIS-IL silicon solar cell with passivation layer to induce surface inversion

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2230086A1 (en) * 1973-05-14 1974-12-13 Centre Nat Etd Spatiales Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
US4090213A (en) * 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication

Also Published As

Publication number Publication date
IT7926642A0 (it) 1979-10-19
US4253881A (en) 1981-03-03
FR2440081B1 (it) 1983-07-22
GB2034973B (en) 1983-01-06
AU524635B2 (en) 1982-09-23
FR2440081A1 (fr) 1980-05-23
GB2034973A (en) 1980-06-11
AU5202279A (en) 1980-05-01

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Effective date: 19951027