IT1298516B1 - Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione - Google Patents

Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione

Info

Publication number
IT1298516B1
IT1298516B1 IT98MI000170A ITMI980170A IT1298516B1 IT 1298516 B1 IT1298516 B1 IT 1298516B1 IT 98MI000170 A IT98MI000170 A IT 98MI000170A IT MI980170 A ITMI980170 A IT MI980170A IT 1298516 B1 IT1298516 B1 IT 1298516B1
Authority
IT
Italy
Prior art keywords
manufacturing process
semiconductor material
power device
electronic power
device integrated
Prior art date
Application number
IT98MI000170A
Other languages
English (en)
Inventor
Davide Patti
Francesco Priolo
Vittorio Privitera
Giorgia Franzo'
Original Assignee
Sgs Thomson Microelectronics
Cons Ric Microelettronica
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics, Cons Ric Microelettronica filed Critical Sgs Thomson Microelectronics
Priority to IT98MI000170A priority Critical patent/IT1298516B1/it
Priority to US09/238,693 priority patent/US6448125B1/en
Publication of ITMI980170A1 publication Critical patent/ITMI980170A1/it
Application granted granted Critical
Publication of IT1298516B1 publication Critical patent/IT1298516B1/it
Priority to US10/202,076 priority patent/US20020185677A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
IT98MI000170A 1998-01-30 1998-01-30 Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione IT1298516B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT98MI000170A IT1298516B1 (it) 1998-01-30 1998-01-30 Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione
US09/238,693 US6448125B1 (en) 1998-01-30 1999-01-27 Electronic power device integrated on a semiconductor material and related manufacturing process
US10/202,076 US20020185677A1 (en) 1998-01-30 2002-07-23 Electronic power device integrated on a semiconductor material and related manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT98MI000170A IT1298516B1 (it) 1998-01-30 1998-01-30 Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione

Publications (2)

Publication Number Publication Date
ITMI980170A1 ITMI980170A1 (it) 1999-07-30
IT1298516B1 true IT1298516B1 (it) 2000-01-12

Family

ID=11378757

Family Applications (1)

Application Number Title Priority Date Filing Date
IT98MI000170A IT1298516B1 (it) 1998-01-30 1998-01-30 Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione

Country Status (2)

Country Link
US (2) US6448125B1 (it)
IT (1) IT1298516B1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9024354B2 (en) * 2013-08-06 2015-05-05 Amazing Microelectronics Corp. Silicon-controlled rectification device with high efficiency
US9337106B2 (en) 2013-12-30 2016-05-10 Texas Instruments Incorporated Implant profiling with resist

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473090A (en) * 1967-06-30 1969-10-14 Texas Instruments Inc Integrated circuit having matched complementary transistors
US4054899A (en) * 1970-09-03 1977-10-18 Texas Instruments Incorporated Process for fabricating monolithic circuits having matched complementary transistors and product
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
DE2445480A1 (de) * 1974-09-24 1976-04-01 Ibm Deutschland Verfahren zur herstellung eines leistungstransistors
US4240846A (en) * 1978-06-27 1980-12-23 Harris Corporation Method of fabricating up diffused substrate FED logic utilizing a two-step epitaxial deposition
US4357622A (en) * 1980-01-18 1982-11-02 International Business Machines Corporation Complementary transistor structure
JPS63233564A (ja) * 1987-03-23 1988-09-29 Canon Inc 接合型トランジスタの製造法
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
US6004855A (en) * 1988-04-11 1999-12-21 Synergy Semiconductor Corporation Process for producing a high performance bipolar structure
US4960726A (en) * 1989-10-19 1990-10-02 International Business Machines Corporation BiCMOS process
JPH07114210B2 (ja) * 1990-01-26 1995-12-06 株式会社東芝 半導体装置の製造方法
US5866461A (en) * 1990-12-30 1999-02-02 Stmicroelectronics S.R.L. Method for forming an integrated emitter switching configuration using bipolar transistors
JP2625602B2 (ja) * 1991-01-18 1997-07-02 インターナショナル・ビジネス・マシーンズ・コーポレイション 集積回路デバイスの製造プロセス
JPH04284669A (ja) * 1991-03-14 1992-10-09 Fuji Electric Co Ltd 絶縁ゲート制御サイリスタ
US5648281A (en) * 1992-09-21 1997-07-15 Siliconix Incorporated Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate
DE69420565T2 (de) * 1994-10-27 2000-03-30 Cons Ric Microelettronica Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem Leistungstransistor
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process
JP3409618B2 (ja) * 1996-12-26 2003-05-26 ソニー株式会社 半導体装置の製造方法
US6127723A (en) * 1998-01-30 2000-10-03 Sgs-Thomson Microelectronics, S.R.L. Integrated device in an emitter-switching configuration
US6140694A (en) * 1998-12-30 2000-10-31 Philips Electronics North America Corporation Field isolated integrated injection logic gate

Also Published As

Publication number Publication date
US20020185677A1 (en) 2002-12-12
US6448125B1 (en) 2002-09-10
ITMI980170A1 (it) 1999-07-30

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Legal Events

Date Code Title Description
0001 Granted