IT1252280B - Memoria a semiconduttore del tipo ad amplificatore sensore comune - Google Patents
Memoria a semiconduttore del tipo ad amplificatore sensore comuneInfo
- Publication number
- IT1252280B IT1252280B ITMI913091A ITMI913091A IT1252280B IT 1252280 B IT1252280 B IT 1252280B IT MI913091 A ITMI913091 A IT MI913091A IT MI913091 A ITMI913091 A IT MI913091A IT 1252280 B IT1252280 B IT 1252280B
- Authority
- IT
- Italy
- Prior art keywords
- memory cells
- semiconductor memory
- sensor amplifier
- pair
- transistors
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
Un dispositivo di memoria a semiconduttore comprende due matrici (1a, 1b) di celle di memoria. Le matrici (1a, 1b) di celle di memoria sono previste in comune con un gruppo di amplificatori sensori (2). Ciascun amplificatore sensore (20) di un gruppo di amplificatori sensori (2) è collegato ad una corrispondente coppia (BL1, BL1) di linee di bit entro una matrice (1a) di celle di memoria attraverso una coppia di transistor di trasmissione (S1, S3) formati da transistor MOS a canale N, e collegati ad una corrispondente coppia (BL2, BL2) di linee di bit entro l'altra matrice (1b) di celle di memoria attraverso una coppia di transistor di trasmissione (S2, 24) formata da transistor MOS a canale P. I medesimi segnali di controllo sono applicati a porte di queste coppie di transistor di trasmissione (S1 - S4). I segnali di controllo mantengono un livello 1/2 Vcc durante un periodo di precarica, e salgono a livelli alti o scendono a livelli bassi.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2318676A JPH04186593A (ja) | 1990-11-21 | 1990-11-21 | 半導体記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI913091A0 ITMI913091A0 (it) | 1991-11-20 |
ITMI913091A1 ITMI913091A1 (it) | 1993-05-20 |
IT1252280B true IT1252280B (it) | 1995-06-08 |
Family
ID=18101786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI913091A IT1252280B (it) | 1990-11-21 | 1991-11-20 | Memoria a semiconduttore del tipo ad amplificatore sensore comune |
Country Status (5)
Country | Link |
---|---|
US (1) | US5243574A (it) |
JP (1) | JPH04186593A (it) |
KR (1) | KR950001289B1 (it) |
DE (1) | DE4138340C2 (it) |
IT (1) | IT1252280B (it) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3319610B2 (ja) * | 1991-11-22 | 2002-09-03 | 日本テキサス・インスツルメンツ株式会社 | 信号伝達回路 |
KR970004460B1 (ko) * | 1992-06-30 | 1997-03-27 | 니뽄 덴끼 가부시끼가이샤 | 반도체 메모리 회로 |
JP2814846B2 (ja) * | 1992-07-29 | 1998-10-27 | 日本電気株式会社 | 半導体記憶装置 |
JPH0757466A (ja) * | 1993-08-12 | 1995-03-03 | Toshiba Corp | 半導体集積回路 |
JPH07326192A (ja) * | 1994-05-31 | 1995-12-12 | Toshiba Micro Comput Eng Corp | 半導体記憶装置 |
US5907516A (en) * | 1994-07-07 | 1999-05-25 | Hyundai Electronics Industries Co., Ltd. | Semiconductor memory device with reduced data bus line load |
US5836007A (en) * | 1995-09-14 | 1998-11-10 | International Business Machines Corporation | Methods and systems for improving memory component size and access speed including splitting bit lines and alternate pre-charge/access cycles |
US5561630A (en) * | 1995-09-28 | 1996-10-01 | International Business Machines Coporation | Data sense circuit for dynamic random access memories |
US5710738A (en) * | 1996-12-17 | 1998-01-20 | Powerchip Semiconductor Corp. | Low power dynamic random access memory |
JPH10302469A (ja) * | 1997-04-25 | 1998-11-13 | Fujitsu Ltd | 半導体記憶装置 |
KR100297727B1 (ko) * | 1998-08-13 | 2001-09-26 | 윤종용 | 분리 제어라인의 큰 부하에 의한 스피드 손실을 방지할 수 있는반도체 메모리 장치 |
KR100395877B1 (ko) * | 2000-11-10 | 2003-08-25 | 삼성전자주식회사 | 반도체 메모리의 데이타 감지 장치 |
KR100382614B1 (ko) * | 2000-12-29 | 2003-05-09 | 주식회사 하이닉스반도체 | 저전력의 메모리 코아 제어 장치 |
US6580655B2 (en) * | 2001-08-29 | 2003-06-17 | International Business Machines Corporation | Pre-charge circuit and method for memory devices with shared sense amplifiers |
JP4462528B2 (ja) | 2002-06-24 | 2010-05-12 | 株式会社日立製作所 | 半導体集積回路装置 |
KR100838363B1 (ko) | 2005-10-20 | 2008-06-13 | 주식회사 하이닉스반도체 | 센스앰프 회로 |
KR100871083B1 (ko) * | 2007-02-27 | 2008-11-28 | 삼성전자주식회사 | 입출력 센스앰프를 구비하는 반도체 메모리 장치의레이아웃 구조 |
US8050127B2 (en) * | 2009-02-06 | 2011-11-01 | Hynix Semiconductor Inc. | Semiconductor memory device |
US8437204B2 (en) * | 2009-06-12 | 2013-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array with corresponding row and column control signals |
KR101033490B1 (ko) * | 2009-11-30 | 2011-05-09 | 주식회사 하이닉스반도체 | 패드를 선택적으로 이용하는 반도체 메모리 장치 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62273694A (ja) * | 1986-05-22 | 1987-11-27 | Sony Corp | センスアンプ |
JPS632197A (ja) * | 1986-06-20 | 1988-01-07 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2644261B2 (ja) * | 1988-03-15 | 1997-08-25 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
JPH0229989A (ja) * | 1988-07-19 | 1990-01-31 | Mitsubishi Electric Corp | ダイナミックランダムアクセスメモリ装置 |
JPH0713861B2 (ja) * | 1988-12-05 | 1995-02-15 | 三菱電機株式会社 | 半導体記憶装置 |
-
1990
- 1990-11-21 JP JP2318676A patent/JPH04186593A/ja active Pending
-
1991
- 1991-11-09 KR KR1019910019888A patent/KR950001289B1/ko not_active IP Right Cessation
- 1991-11-19 US US07/794,269 patent/US5243574A/en not_active Expired - Fee Related
- 1991-11-20 IT ITMI913091A patent/IT1252280B/it active IP Right Grant
- 1991-11-21 DE DE4138340A patent/DE4138340C2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04186593A (ja) | 1992-07-03 |
US5243574A (en) | 1993-09-07 |
KR950001289B1 (ko) | 1995-02-15 |
DE4138340C2 (de) | 1994-01-20 |
DE4138340A1 (de) | 1992-05-27 |
ITMI913091A1 (it) | 1993-05-20 |
KR920010638A (ko) | 1992-06-26 |
ITMI913091A0 (it) | 1991-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1252280B (it) | Memoria a semiconduttore del tipo ad amplificatore sensore comune | |
KR920001542A (ko) | 감지 증폭기를 갖는 반도체 메모리 | |
JPS57186289A (en) | Semiconductor memory | |
US5666319A (en) | Sense amplifier | |
GB2060300A (en) | Cmos sense amplifier | |
KR100655375B1 (ko) | 메모리 코어 및 이를 구비한 반도체 메모리 장치 | |
TW326534B (en) | Semiconductor memory device | |
IT1252012B (it) | Circuito di trasmissione di dati avente una linea di ingresso/uscita comune | |
JPS6419584A (en) | Semiconductor memory device | |
KR930003143A (ko) | 분할된 입출력 라인을 갖는 데이타 전송회로 | |
KR920006983A (ko) | 저잡음 감지 구조를 가진 반도체 메모리 장치 | |
JPS60211693A (ja) | Mos増幅回路 | |
JPS6271088A (ja) | スタテイツク型ram | |
TW358946B (en) | Semiconductor memory having a fast operation circuit array structure | |
JPS57203290A (en) | Ic memory | |
KR100253391B1 (ko) | 투 포트 에스램의 라이트 스루 기능을 갖는 고속회로 | |
KR970031240A (ko) | 출력하한값에 대한 리미트기능을 갖는 증폭회로 및 상보형 증폭회로(amplifier circuit and complementary amplifier circuit with limiting function for output lower limit) | |
KR940020565A (ko) | 반도체 집적회로(semiconductor integrated circuit) | |
TW430809B (en) | Semiconductor memory device having twisted bit-line structure | |
JP2007133987A (ja) | 半導体記憶装置および半導体記憶装置の駆動方法 | |
TW200501161A (en) | Magnetic memory device and sense amplifier circuit and read-out method thereof | |
KR20040110784A (ko) | 메모리 장치용 비트라인 프리차지 신호 발생기 | |
KR900008523A (ko) | 반도체 메모리 소자 | |
US5525918A (en) | Pre-sense amplifier for monolithic memories | |
US5262992A (en) | Semiconductor memory device having bit line pairs each divided into bit line sections with sense amplifier circuits |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971129 |