IT1183296B - Portacristallo - Google Patents

Portacristallo

Info

Publication number
IT1183296B
IT1183296B IT19219/85A IT1921985A IT1183296B IT 1183296 B IT1183296 B IT 1183296B IT 19219/85 A IT19219/85 A IT 19219/85A IT 1921985 A IT1921985 A IT 1921985A IT 1183296 B IT1183296 B IT 1183296B
Authority
IT
Italy
Prior art keywords
portacristallo
Prior art date
Application number
IT19219/85A
Other languages
English (en)
Italian (it)
Other versions
IT8519219A0 (it
Inventor
Dietrich Drechsel
Original Assignee
Leybold Heraeus Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Heraeus Gmbh & Co Kg filed Critical Leybold Heraeus Gmbh & Co Kg
Publication of IT8519219A0 publication Critical patent/IT8519219A0/it
Application granted granted Critical
Publication of IT1183296B publication Critical patent/IT1183296B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT19219/85A 1984-04-14 1985-01-24 Portacristallo IT1183296B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19843414290 DE3414290A1 (de) 1984-04-14 1984-04-14 Kristallhalter

Publications (2)

Publication Number Publication Date
IT8519219A0 IT8519219A0 (it) 1985-01-24
IT1183296B true IT1183296B (it) 1987-10-22

Family

ID=6233702

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19219/85A IT1183296B (it) 1984-04-14 1985-01-24 Portacristallo

Country Status (9)

Country Link
US (1) US4738832A (enExample)
JP (1) JPS60231493A (enExample)
DE (1) DE3414290A1 (enExample)
DK (1) DK161156C (enExample)
ES (1) ES8606541A1 (enExample)
FI (1) FI76841C (enExample)
FR (1) FR2562915B1 (enExample)
IT (1) IT1183296B (enExample)
NL (1) NL8500256A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3806918A1 (de) * 1988-03-03 1989-09-14 Leybold Ag Vorrichtung zum ziehen von einkristallen
JP3402038B2 (ja) * 1995-12-25 2003-04-28 信越半導体株式会社 単結晶引上げ装置
JP3402040B2 (ja) * 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置
JP3531333B2 (ja) * 1996-02-14 2004-05-31 信越半導体株式会社 チョクラルスキー法による結晶製造装置、結晶製造方法、およびこの方法から製造される結晶
RU2102541C1 (ru) * 1996-07-24 1998-01-20 Государственный научно-исследовательский и проектный институт редкометаллической промышленности Устройство для выращивания монокристаллов
US5827367A (en) * 1996-09-13 1998-10-27 Seh America Apparatus for improving mechanical strength of the neck section of czochralski silicon crystal
JPH10279386A (ja) * 1997-03-31 1998-10-20 Super Silicon Kenkyusho:Kk 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法
US5935328A (en) * 1997-11-25 1999-08-10 Memc Electronic Materials, Inc. Apparatus for use in crystal pulling
US6183556B1 (en) * 1998-10-06 2001-02-06 Seh-America, Inc. Insulating and warming shield for a seed crystal and seed chuck
US7343960B1 (en) 1998-11-20 2008-03-18 Rolls-Royce Corporation Method and apparatus for production of a cast component
US6932145B2 (en) * 1998-11-20 2005-08-23 Rolls-Royce Corporation Method and apparatus for production of a cast component
JP3750525B2 (ja) * 1998-12-28 2006-03-01 信越半導体株式会社 単結晶の製造方法および引上げ装置
US6203614B1 (en) * 1999-05-28 2001-03-20 Memc Electronic Materials, Inc. Cable assembly for crystal puller
JP4683184B2 (ja) * 2004-11-04 2011-05-11 信越半導体株式会社 単結晶引上げ装置のシードチャック
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
CZ302830B6 (cs) 2009-12-15 2011-11-30 Ústav makromolekulární chemie AV CR, v.v.i. Vysokomolekulární polymerní nosice léciv odvozené od dendrimeru a jejich konjugáty s lécivy pro lécbu zejména pevných nádoru
RU2434082C2 (ru) * 2009-12-28 2011-11-20 Федеральное Государственное Унитарное Предприятие "Всероссийский научно-исследовательский институт токов высокой частоты им. В.П. Вологдина" (ФГУП ВНИИТВЧ им. В.П. Вологдина) Узел крепления нагретого тела на штоке в герметичной камере
CN103484932B (zh) * 2013-09-13 2016-02-17 沃德盛光伏科技（苏州）有限公司 一种单晶晶体双重防护重锤装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1043641B (de) * 1953-05-21 1958-11-13 Siemens Ag Verfahren zur Bestimmung der Kristallisationsgeschwindigkeit von undurchsichtigen Einkristallen
NL128651C (enExample) * 1966-01-26
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
US4371502A (en) * 1980-02-08 1983-02-01 Ferrofluidics Corporation Crystal growing furnace pulling head
NL8102566A (nl) * 1980-06-14 1982-01-04 Leybold Heraeus Gmbh & Co Kg Inrichting voor het door middel van een opwikkelbaar trekorgaan uit een kroes trekken van een enkel kristal.
FR2551470B1 (fr) * 1983-09-06 1985-11-08 Crismatec Tete de tirage de monocristaux
JPS6096596A (ja) * 1983-10-28 1985-05-30 Sumitomo Electric Ind Ltd 単結晶引上げ軸
US4663128A (en) * 1985-03-06 1987-05-05 Ferrofluidics Corporation Pulling head for a crystal growing furnace

Also Published As

Publication number Publication date
ES540492A0 (es) 1986-04-16
IT8519219A0 (it) 1985-01-24
FI76841B (fi) 1988-08-31
NL8500256A (nl) 1985-11-01
DK161156B (da) 1991-06-03
FR2562915B1 (fr) 1989-09-29
FR2562915A1 (fr) 1985-10-18
FI850124L (fi) 1985-10-15
DK164485D0 (da) 1985-04-12
DE3414290C2 (enExample) 1992-07-16
FI76841C (fi) 1988-12-12
JPS60231493A (ja) 1985-11-18
ES8606541A1 (es) 1986-04-16
US4738832A (en) 1988-04-19
DK164485A (da) 1985-10-15
DE3414290A1 (de) 1985-10-24
DK161156C (da) 1991-11-11
FI850124A0 (fi) 1985-01-11

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