IT1170061B - Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazione - Google Patents
Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazioneInfo
- Publication number
- IT1170061B IT1170061B IT24374/83A IT2437483A IT1170061B IT 1170061 B IT1170061 B IT 1170061B IT 24374/83 A IT24374/83 A IT 24374/83A IT 2437483 A IT2437483 A IT 2437483A IT 1170061 B IT1170061 B IT 1170061B
- Authority
- IT
- Italy
- Prior art keywords
- semi
- procedure
- manufacture
- pressure sensor
- conductor device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/97—Specified etch stop material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49103—Strain gauge making
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57226274A JPS59117271A (ja) | 1982-12-24 | 1982-12-24 | 圧力感知素子を有する半導体装置とその製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8324374A0 IT8324374A0 (it) | 1983-12-23 |
IT1170061B true IT1170061B (it) | 1987-06-03 |
Family
ID=16842635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT24374/83A IT1170061B (it) | 1982-12-24 | 1983-12-23 | Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazione |
Country Status (9)
Country | Link |
---|---|
US (1) | US4618397A (it) |
JP (1) | JPS59117271A (it) |
KR (1) | KR840007315A (it) |
DE (1) | DE3345988A1 (it) |
FR (1) | FR2538621B1 (it) |
GB (1) | GB2135509B (it) |
HK (1) | HK788A (it) |
IT (1) | IT1170061B (it) |
SG (1) | SG88587G (it) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59136977A (ja) * | 1983-01-26 | 1984-08-06 | Hitachi Ltd | 圧力感知半導体装置とその製造法 |
GB8426915D0 (en) * | 1984-10-24 | 1984-11-28 | Marconi Instruments Ltd | Fabricating devices on semiconductor substrates |
US4672853A (en) * | 1984-10-30 | 1987-06-16 | Burr-Brown Corporation | Apparatus and method for a pressure-sensitive device |
US4793194A (en) * | 1985-03-26 | 1988-12-27 | Endevco Corporation | Piezoresistive transducer |
US4766666A (en) * | 1985-09-30 | 1988-08-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor and method of manufacturing the same |
US4685996A (en) * | 1986-10-14 | 1987-08-11 | Busta Heinz H | Method of making micromachined refractory metal field emitters |
US4721938A (en) * | 1986-12-22 | 1988-01-26 | Delco Electronics Corporation | Process for forming a silicon pressure transducer |
US5207103A (en) * | 1987-06-01 | 1993-05-04 | Wise Kensall D | Ultraminiature single-crystal sensor with movable member |
US5013396A (en) * | 1987-06-01 | 1991-05-07 | The Regents Of The University Of Michigan | Method of making an ultraminiature pressure sensor |
US4756193A (en) * | 1987-09-11 | 1988-07-12 | Delco Electronics Corporation | Pressure sensor |
US5167158A (en) * | 1987-10-07 | 1992-12-01 | Kabushiki Kaisha Komatsu Seisakusho | Semiconductor film pressure sensor and method of manufacturing same |
US4850227A (en) * | 1987-12-22 | 1989-07-25 | Delco Electronics Corporation | Pressure sensor and method of fabrication thereof |
US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
US4885621A (en) * | 1988-05-02 | 1989-12-05 | Delco Electronics Corporation | Monolithic pressure sensitive integrated circuit |
US4977101A (en) * | 1988-05-02 | 1990-12-11 | Delco Electronics Corporation | Monolithic pressure sensitive integrated circuit |
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
US5320705A (en) * | 1988-06-08 | 1994-06-14 | Nippondenso Co., Ltd. | Method of manufacturing a semiconductor pressure sensor |
US5110373A (en) * | 1988-09-13 | 1992-05-05 | Nanostructures, Inc. | Silicon membrane with controlled stress |
US4889590A (en) * | 1989-04-27 | 1989-12-26 | Motorola Inc. | Semiconductor pressure sensor means and method |
US5066533A (en) * | 1989-07-11 | 1991-11-19 | The Perkin-Elmer Corporation | Boron nitride membrane in wafer structure and process of forming the same |
US5031461A (en) * | 1990-02-05 | 1991-07-16 | Motorola, Inc. | Matched pair of sensor and amplifier circuits |
JP2890601B2 (ja) * | 1990-02-08 | 1999-05-17 | 株式会社デンソー | 半導体センサ |
US5259248A (en) * | 1990-03-19 | 1993-11-09 | Hitachi Ltd. | Integrated multisensor and static and differential pressure transmitter and plant system using the integrated multisensor |
US5011568A (en) * | 1990-06-11 | 1991-04-30 | Iowa State University Research Foundation, Inc. | Use of sol-gel derived tantalum oxide as a protective coating for etching silicon |
JP2918299B2 (ja) * | 1990-06-25 | 1999-07-12 | 沖電気工業株式会社 | 半導体圧力センサおよびそれを有する半導体装置の製造方法 |
US5231301A (en) * | 1991-10-02 | 1993-07-27 | Lucas Novasensor | Semiconductor sensor with piezoresistors and improved electrostatic structures |
JPH05190872A (ja) * | 1992-01-16 | 1993-07-30 | Oki Electric Ind Co Ltd | 半導体圧力センサおよびその製造方法 |
US5293516A (en) * | 1992-01-28 | 1994-03-08 | International Business Machines Corporation | Multiprobe apparatus |
US6140143A (en) * | 1992-02-10 | 2000-10-31 | Lucas Novasensor Inc. | Method of producing a buried boss diaphragm structure in silicon |
JP2940293B2 (ja) * | 1992-03-31 | 1999-08-25 | 日産自動車株式会社 | 半導体加速度センサの製造方法 |
US6714625B1 (en) | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
DE69313337T2 (de) * | 1992-04-17 | 1998-01-02 | Terumo Corp | Infrarotsensor und Verfahren für dessen Herstellung |
DE4309207C2 (de) * | 1993-03-22 | 1996-07-11 | Texas Instruments Deutschland | Halbleitervorrichtung mit einem piezoresistiven Drucksensor |
US5484745A (en) * | 1993-10-26 | 1996-01-16 | Yazaki Meter Co., Ltd. | Method for forming a semiconductor sensor |
US5949118A (en) * | 1994-03-14 | 1999-09-07 | Nippondenso Co., Ltd. | Etching method for silicon substrates and semiconductor sensor |
EP0672899B1 (en) * | 1994-03-18 | 1999-10-06 | The Foxboro Company | Semiconductor pressure sensor with single-crystal silicon diaphragm and single-crystal gage elements and fabrication method therefor |
JPH08236784A (ja) * | 1995-02-23 | 1996-09-13 | Tokai Rika Co Ltd | 加速度センサ及びその製造方法 |
US5804462A (en) * | 1995-11-30 | 1998-09-08 | Motorola, Inc. | Method for forming a multiple-sensor semiconductor chip |
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
US6284670B1 (en) | 1997-07-23 | 2001-09-04 | Denso Corporation | Method of etching silicon wafer and silicon wafer |
US6022756A (en) * | 1998-07-31 | 2000-02-08 | Delco Electronics Corp. | Metal diaphragm sensor with polysilicon sensing elements and methods therefor |
US6225140B1 (en) * | 1998-10-13 | 2001-05-01 | Institute Of Microelectronics | CMOS compatable surface machined pressure sensor and method of fabricating the same |
US6229190B1 (en) * | 1998-12-18 | 2001-05-08 | Maxim Integrated Products, Inc. | Compensated semiconductor pressure sensor |
JP3567094B2 (ja) * | 1999-02-09 | 2004-09-15 | 株式会社日立製作所 | 回路内蔵型センサおよびそれを用いた圧力検出装置 |
JP2002131161A (ja) * | 2000-10-27 | 2002-05-09 | Denso Corp | 半導体圧力センサ |
US6622558B2 (en) | 2000-11-30 | 2003-09-23 | Orbital Research Inc. | Method and sensor for detecting strain using shape memory alloys |
US6748994B2 (en) | 2001-04-11 | 2004-06-15 | Avery Dennison Corporation | Label applicator, method and label therefor |
JP2002340713A (ja) * | 2001-05-10 | 2002-11-27 | Denso Corp | 半導体圧力センサ |
AU2003255254A1 (en) | 2002-08-08 | 2004-02-25 | Glenn J. Leedy | Vertical system integration |
US7884432B2 (en) * | 2005-03-22 | 2011-02-08 | Ametek, Inc. | Apparatus and methods for shielding integrated circuitry |
DE102005046058A1 (de) * | 2005-09-27 | 2007-03-29 | Robert Bosch Gmbh | Verfahren zur Herstellung einer eine monolithisch integrierte Schaltung unfassende Sensoranordnung und Sensoranordnung |
US20070238215A1 (en) * | 2006-04-07 | 2007-10-11 | Honeywell International Inc. | Pressure transducer with increased sensitivity |
US7343812B2 (en) * | 2006-06-15 | 2008-03-18 | Honeywell International Inc. | Method to reduce die edge shorting on pressure sensors using conductive elastomeric seals |
JP5110885B2 (ja) * | 2007-01-19 | 2012-12-26 | キヤノン株式会社 | 複数の導電性の領域を有する構造体 |
US7934430B2 (en) * | 2007-11-01 | 2011-05-03 | Fairchild Semiconductor Corporation | Die scale strain gauge |
FR2946775A1 (fr) * | 2009-06-15 | 2010-12-17 | St Microelectronics Rousset | Dispositif de detection d'amincissement du substrat d'une puce de circuit integre |
CN102023065B (zh) * | 2009-09-11 | 2016-04-13 | 北京京东方光电科技有限公司 | 用于检测液晶面板生产中毛刷压入量的接触力测量基板 |
US8656772B2 (en) | 2010-03-22 | 2014-02-25 | Honeywell International Inc. | Flow sensor with pressure output signal |
US8616065B2 (en) | 2010-11-24 | 2013-12-31 | Honeywell International Inc. | Pressure sensor |
US8695417B2 (en) | 2011-01-31 | 2014-04-15 | Honeywell International Inc. | Flow sensor with enhanced flow range capability |
US8558330B2 (en) * | 2011-10-31 | 2013-10-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep well process for MEMS pressure sensor |
US9003897B2 (en) | 2012-05-10 | 2015-04-14 | Honeywell International Inc. | Temperature compensated force sensor |
US9052217B2 (en) | 2012-11-09 | 2015-06-09 | Honeywell International Inc. | Variable scale sensor |
JP6101141B2 (ja) * | 2013-04-18 | 2017-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US10866203B2 (en) * | 2016-03-31 | 2020-12-15 | Kyocera Corporation | Stress sensor |
US10352792B2 (en) * | 2017-02-15 | 2019-07-16 | Texas Instruments Incorporated | Device and method for on-chip mechanical stress sensing |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515277B2 (it) * | 1971-12-22 | 1976-02-18 | ||
GB1399988A (en) * | 1972-10-02 | 1975-07-02 | Motorola Inc | Silicon pressure sensor |
US3893228A (en) * | 1972-10-02 | 1975-07-08 | Motorola Inc | Silicon pressure sensor |
US3994009A (en) * | 1973-02-12 | 1976-11-23 | Honeywell Inc. | Stress sensor diaphragms over recessed substrates |
US3858150A (en) * | 1973-06-21 | 1974-12-31 | Motorola Inc | Polycrystalline silicon pressure sensor |
US4021766A (en) * | 1975-07-28 | 1977-05-03 | Aine Harry E | Solid state pressure transducer of the leaf spring type and batch method of making same |
DE2644638A1 (de) * | 1975-10-06 | 1977-04-07 | Honeywell Inc | Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler |
US4033787A (en) * | 1975-10-06 | 1977-07-05 | Honeywell Inc. | Fabrication of semiconductor devices utilizing ion implantation |
DE2841312C2 (de) * | 1978-09-22 | 1985-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung |
US4234361A (en) * | 1979-07-05 | 1980-11-18 | Wisconsin Alumni Research Foundation | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
US4372803A (en) * | 1980-09-26 | 1983-02-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for etch thinning silicon devices |
-
1982
- 1982-12-24 JP JP57226274A patent/JPS59117271A/ja active Pending
-
1983
- 1983-12-20 DE DE19833345988 patent/DE3345988A1/de not_active Withdrawn
- 1983-12-22 KR KR1019830006103A patent/KR840007315A/ko not_active Application Discontinuation
- 1983-12-22 GB GB08334221A patent/GB2135509B/en not_active Expired
- 1983-12-23 FR FR8320663A patent/FR2538621B1/fr not_active Expired
- 1983-12-23 IT IT24374/83A patent/IT1170061B/it active
-
1985
- 1985-11-27 US US06/802,431 patent/US4618397A/en not_active Expired - Lifetime
-
1987
- 1987-10-12 SG SG885/87A patent/SG88587G/en unknown
-
1988
- 1988-01-07 HK HK7/88A patent/HK788A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
KR840007315A (ko) | 1984-12-06 |
SG88587G (en) | 1988-06-03 |
HK788A (en) | 1988-01-15 |
US4618397A (en) | 1986-10-21 |
DE3345988A1 (de) | 1984-06-28 |
IT8324374A0 (it) | 1983-12-23 |
GB8334221D0 (en) | 1984-02-01 |
FR2538621A1 (fr) | 1984-06-29 |
JPS59117271A (ja) | 1984-07-06 |
FR2538621B1 (fr) | 1986-10-17 |
GB2135509A (en) | 1984-08-30 |
GB2135509B (en) | 1986-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1170061B (it) | Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazione | |
IT8168603A0 (it) | Dispositivo a semiconduttore e procedimento per la sua fabbricazione | |
IT8319413A0 (it) | Dispositivo a semiconduttori eprocedimento per la sua fabbricazione. | |
KR850005144A (ko) | 반도체 압력 감지장치 | |
IT1140271B (it) | Dispositivo a semiconduttore e procedimento per la sua produzione | |
IT8322777A0 (it) | Dispositivo a circuito integrato a semiconduttori e procedimento per la sua fabbricazione. | |
IT1187900B (it) | Dispositivo sensore di pressione | |
IT8420481A0 (it) | Dispositivo di memoria a semiconduttore e procedimento per la sua fabbricazione. | |
FR2561393B1 (fr) | Capteur de macroparticules a ultrasons | |
DK461784D0 (da) | Trykfoeler | |
IT8168266A0 (it) | Dispositivo a semiconduttore e procedimento per la sua fabbricazione | |
DE3772514D1 (de) | Messverfahren fuer einen halbleiter-druckmessfuehler. | |
IT8322558A0 (it) | Dispositivo a circuito integrato a semiconduttore e procedimento per la sua fabbricazione. | |
DE3376875D1 (en) | Pressure sensor with semi-conductor diaphragm | |
IT8222563A0 (it) | Dispositivo a semiconduttori eprocedimento per la sua fabbricazione. | |
IT8148997A0 (it) | Procedimento per la cernita di componenti a semiconduttori e dispositivo per la sua realizzazione | |
IT8422846A0 (it) | Dispositivo a semiconduttore eprocedimento per la sua fabbricazione. | |
IT8221211A0 (it) | Dispositivo di memoria a semiconduttori e procedimento per la sua fabbricazione. | |
IT1167569B (it) | Sensore di pressione | |
AT383895B (de) | Druckaufnehmer | |
IT8424246A0 (it) | Dispositivo a semiconduttori eprocedimento per la sua fabbricazione. | |
ES549254A0 (es) | Aparato de medicion de diferencias de presion con un sensor de presion semiconductor | |
IT8125073A0 (it) | Dispositivi a circuito integrato a semiconduttori e procedimento per la sua fabbricazione. | |
IT8319414A0 (it) | Dispositivo a semiconduttori eprocedimento per la sua fabbricazione. | |
AT381169B (de) | Druckaufnehmer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19951222 |