IT1170061B - Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazione - Google Patents

Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazione

Info

Publication number
IT1170061B
IT1170061B IT24374/83A IT2437483A IT1170061B IT 1170061 B IT1170061 B IT 1170061B IT 24374/83 A IT24374/83 A IT 24374/83A IT 2437483 A IT2437483 A IT 2437483A IT 1170061 B IT1170061 B IT 1170061B
Authority
IT
Italy
Prior art keywords
semi
procedure
manufacture
pressure sensor
conductor device
Prior art date
Application number
IT24374/83A
Other languages
English (en)
Other versions
IT8324374A0 (it
Inventor
Shimizu Isao
Yamada Kazuji
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8324374A0 publication Critical patent/IT8324374A0/it
Application granted granted Critical
Publication of IT1170061B publication Critical patent/IT1170061B/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
IT24374/83A 1982-12-24 1983-12-23 Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazione IT1170061B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226274A JPS59117271A (ja) 1982-12-24 1982-12-24 圧力感知素子を有する半導体装置とその製造法

Publications (2)

Publication Number Publication Date
IT8324374A0 IT8324374A0 (it) 1983-12-23
IT1170061B true IT1170061B (it) 1987-06-03

Family

ID=16842635

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24374/83A IT1170061B (it) 1982-12-24 1983-12-23 Dispositivo a seminconduttore avente un sensore di pressione e procedimento per la sua fabbricazione

Country Status (9)

Country Link
US (1) US4618397A (it)
JP (1) JPS59117271A (it)
KR (1) KR840007315A (it)
DE (1) DE3345988A1 (it)
FR (1) FR2538621B1 (it)
GB (1) GB2135509B (it)
HK (1) HK788A (it)
IT (1) IT1170061B (it)
SG (1) SG88587G (it)

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JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
GB8426915D0 (en) * 1984-10-24 1984-11-28 Marconi Instruments Ltd Fabricating devices on semiconductor substrates
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US4793194A (en) * 1985-03-26 1988-12-27 Endevco Corporation Piezoresistive transducer
US4766666A (en) * 1985-09-30 1988-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor and method of manufacturing the same
US4685996A (en) * 1986-10-14 1987-08-11 Busta Heinz H Method of making micromachined refractory metal field emitters
US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
US5207103A (en) * 1987-06-01 1993-05-04 Wise Kensall D Ultraminiature single-crystal sensor with movable member
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
US4756193A (en) * 1987-09-11 1988-07-12 Delco Electronics Corporation Pressure sensor
US5167158A (en) * 1987-10-07 1992-12-01 Kabushiki Kaisha Komatsu Seisakusho Semiconductor film pressure sensor and method of manufacturing same
US4850227A (en) * 1987-12-22 1989-07-25 Delco Electronics Corporation Pressure sensor and method of fabrication thereof
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US4977101A (en) * 1988-05-02 1990-12-11 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
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US5320705A (en) * 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
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US5066533A (en) * 1989-07-11 1991-11-19 The Perkin-Elmer Corporation Boron nitride membrane in wafer structure and process of forming the same
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JP2890601B2 (ja) * 1990-02-08 1999-05-17 株式会社デンソー 半導体センサ
US5259248A (en) * 1990-03-19 1993-11-09 Hitachi Ltd. Integrated multisensor and static and differential pressure transmitter and plant system using the integrated multisensor
US5011568A (en) * 1990-06-11 1991-04-30 Iowa State University Research Foundation, Inc. Use of sol-gel derived tantalum oxide as a protective coating for etching silicon
JP2918299B2 (ja) * 1990-06-25 1999-07-12 沖電気工業株式会社 半導体圧力センサおよびそれを有する半導体装置の製造方法
US5231301A (en) * 1991-10-02 1993-07-27 Lucas Novasensor Semiconductor sensor with piezoresistors and improved electrostatic structures
JPH05190872A (ja) * 1992-01-16 1993-07-30 Oki Electric Ind Co Ltd 半導体圧力センサおよびその製造方法
US5293516A (en) * 1992-01-28 1994-03-08 International Business Machines Corporation Multiprobe apparatus
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
JP2940293B2 (ja) * 1992-03-31 1999-08-25 日産自動車株式会社 半導体加速度センサの製造方法
US6714625B1 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
DE69313337T2 (de) * 1992-04-17 1998-01-02 Terumo Corp Infrarotsensor und Verfahren für dessen Herstellung
DE4309207C2 (de) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Halbleitervorrichtung mit einem piezoresistiven Drucksensor
US5484745A (en) * 1993-10-26 1996-01-16 Yazaki Meter Co., Ltd. Method for forming a semiconductor sensor
US5949118A (en) * 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
EP0672899B1 (en) * 1994-03-18 1999-10-06 The Foxboro Company Semiconductor pressure sensor with single-crystal silicon diaphragm and single-crystal gage elements and fabrication method therefor
JPH08236784A (ja) * 1995-02-23 1996-09-13 Tokai Rika Co Ltd 加速度センサ及びその製造方法
US5804462A (en) * 1995-11-30 1998-09-08 Motorola, Inc. Method for forming a multiple-sensor semiconductor chip
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6284670B1 (en) 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
US6022756A (en) * 1998-07-31 2000-02-08 Delco Electronics Corp. Metal diaphragm sensor with polysilicon sensing elements and methods therefor
US6225140B1 (en) * 1998-10-13 2001-05-01 Institute Of Microelectronics CMOS compatable surface machined pressure sensor and method of fabricating the same
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
JP3567094B2 (ja) * 1999-02-09 2004-09-15 株式会社日立製作所 回路内蔵型センサおよびそれを用いた圧力検出装置
JP2002131161A (ja) * 2000-10-27 2002-05-09 Denso Corp 半導体圧力センサ
US6622558B2 (en) 2000-11-30 2003-09-23 Orbital Research Inc. Method and sensor for detecting strain using shape memory alloys
US6748994B2 (en) 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
JP2002340713A (ja) * 2001-05-10 2002-11-27 Denso Corp 半導体圧力センサ
AU2003255254A1 (en) 2002-08-08 2004-02-25 Glenn J. Leedy Vertical system integration
US7884432B2 (en) * 2005-03-22 2011-02-08 Ametek, Inc. Apparatus and methods for shielding integrated circuitry
DE102005046058A1 (de) * 2005-09-27 2007-03-29 Robert Bosch Gmbh Verfahren zur Herstellung einer eine monolithisch integrierte Schaltung unfassende Sensoranordnung und Sensoranordnung
US20070238215A1 (en) * 2006-04-07 2007-10-11 Honeywell International Inc. Pressure transducer with increased sensitivity
US7343812B2 (en) * 2006-06-15 2008-03-18 Honeywell International Inc. Method to reduce die edge shorting on pressure sensors using conductive elastomeric seals
JP5110885B2 (ja) * 2007-01-19 2012-12-26 キヤノン株式会社 複数の導電性の領域を有する構造体
US7934430B2 (en) * 2007-11-01 2011-05-03 Fairchild Semiconductor Corporation Die scale strain gauge
FR2946775A1 (fr) * 2009-06-15 2010-12-17 St Microelectronics Rousset Dispositif de detection d'amincissement du substrat d'une puce de circuit integre
CN102023065B (zh) * 2009-09-11 2016-04-13 北京京东方光电科技有限公司 用于检测液晶面板生产中毛刷压入量的接触力测量基板
US8656772B2 (en) 2010-03-22 2014-02-25 Honeywell International Inc. Flow sensor with pressure output signal
US8616065B2 (en) 2010-11-24 2013-12-31 Honeywell International Inc. Pressure sensor
US8695417B2 (en) 2011-01-31 2014-04-15 Honeywell International Inc. Flow sensor with enhanced flow range capability
US8558330B2 (en) * 2011-10-31 2013-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Deep well process for MEMS pressure sensor
US9003897B2 (en) 2012-05-10 2015-04-14 Honeywell International Inc. Temperature compensated force sensor
US9052217B2 (en) 2012-11-09 2015-06-09 Honeywell International Inc. Variable scale sensor
JP6101141B2 (ja) * 2013-04-18 2017-03-22 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US10866203B2 (en) * 2016-03-31 2020-12-15 Kyocera Corporation Stress sensor
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DE2841312C2 (de) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
US4234361A (en) * 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
US4372803A (en) * 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices

Also Published As

Publication number Publication date
KR840007315A (ko) 1984-12-06
SG88587G (en) 1988-06-03
HK788A (en) 1988-01-15
US4618397A (en) 1986-10-21
DE3345988A1 (de) 1984-06-28
IT8324374A0 (it) 1983-12-23
GB8334221D0 (en) 1984-02-01
FR2538621A1 (fr) 1984-06-29
JPS59117271A (ja) 1984-07-06
FR2538621B1 (fr) 1986-10-17
GB2135509A (en) 1984-08-30
GB2135509B (en) 1986-10-08

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19951222