IT1077022B - Processo perfezionato per formare regioni incassate di silicio ossi dato termicamente - Google Patents

Processo perfezionato per formare regioni incassate di silicio ossi dato termicamente

Info

Publication number
IT1077022B
IT1077022B IT27307/76A IT2730776A IT1077022B IT 1077022 B IT1077022 B IT 1077022B IT 27307/76 A IT27307/76 A IT 27307/76A IT 2730776 A IT2730776 A IT 2730776A IT 1077022 B IT1077022 B IT 1077022B
Authority
IT
Italy
Prior art keywords
thermally
given
recessed regions
form recessed
bone
Prior art date
Application number
IT27307/76A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1077022B publication Critical patent/IT1077022B/it

Links

Classifications

    • H10W10/012—
    • H10P14/61—
    • H10P50/644—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation
IT27307/76A 1975-11-24 1976-09-17 Processo perfezionato per formare regioni incassate di silicio ossi dato termicamente IT1077022B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/634,571 US3998674A (en) 1975-11-24 1975-11-24 Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching

Publications (1)

Publication Number Publication Date
IT1077022B true IT1077022B (it) 1985-04-27

Family

ID=24544344

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27307/76A IT1077022B (it) 1975-11-24 1976-09-17 Processo perfezionato per formare regioni incassate di silicio ossi dato termicamente

Country Status (8)

Country Link
US (1) US3998674A (enExample)
JP (1) JPS5264884A (enExample)
CA (1) CA1049156A (enExample)
DE (1) DE2651423A1 (enExample)
FR (1) FR2332618A1 (enExample)
GB (1) GB1497199A (enExample)
IT (1) IT1077022B (enExample)
NL (1) NL7611523A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
US4118250A (en) * 1977-12-30 1978-10-03 International Business Machines Corporation Process for producing integrated circuit devices by ion implantation
JPS60253268A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd 半導体装置
JPS6156446A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置およびその製造方法
JP3031117B2 (ja) * 1993-06-02 2000-04-10 日産自動車株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728166A (en) * 1967-01-11 1973-04-17 Ibm Semiconductor device fabrication method and product thereby
JPS507909B1 (enExample) * 1969-08-04 1975-03-31
JPS4844830B1 (enExample) * 1969-08-21 1973-12-27 Tokyo Shibaura Electric Co
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
US3765969A (en) * 1970-07-13 1973-10-16 Bell Telephone Labor Inc Precision etching of semiconductors
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
US3883948A (en) * 1974-01-02 1975-05-20 Signetics Corp Semiconductor structure and method

Also Published As

Publication number Publication date
NL7611523A (nl) 1977-04-26
FR2332618A1 (fr) 1977-06-17
FR2332618B1 (enExample) 1978-06-30
DE2651423A1 (de) 1977-05-26
JPS5264884A (en) 1977-05-28
CA1049156A (en) 1979-02-20
US3998674A (en) 1976-12-21
GB1497199A (en) 1978-01-05
JPS5419755B2 (enExample) 1979-07-17

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