GB1497199A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1497199A
GB1497199A GB44532/76A GB4453276A GB1497199A GB 1497199 A GB1497199 A GB 1497199A GB 44532/76 A GB44532/76 A GB 44532/76A GB 4453276 A GB4453276 A GB 4453276A GB 1497199 A GB1497199 A GB 1497199A
Authority
GB
United Kingdom
Prior art keywords
opening
oxide
masking layer
recess
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44532/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1497199A publication Critical patent/GB1497199A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W10/012
    • H10P14/61
    • H10P50/644
    • H10W10/13
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/973Substrate orientation

Landscapes

  • Element Separation (AREA)
GB44532/76A 1975-11-24 1976-10-26 Semiconductor devices Expired GB1497199A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/634,571 US3998674A (en) 1975-11-24 1975-11-24 Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching

Publications (1)

Publication Number Publication Date
GB1497199A true GB1497199A (en) 1978-01-05

Family

ID=24544344

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44532/76A Expired GB1497199A (en) 1975-11-24 1976-10-26 Semiconductor devices

Country Status (8)

Country Link
US (1) US3998674A (enExample)
JP (1) JPS5264884A (enExample)
CA (1) CA1049156A (enExample)
DE (1) DE2651423A1 (enExample)
FR (1) FR2332618A1 (enExample)
GB (1) GB1497199A (enExample)
IT (1) IT1077022B (enExample)
NL (1) NL7611523A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
US4118250A (en) * 1977-12-30 1978-10-03 International Business Machines Corporation Process for producing integrated circuit devices by ion implantation
JPS60253268A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd 半導体装置
JPS6156446A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置およびその製造方法
JP3031117B2 (ja) * 1993-06-02 2000-04-10 日産自動車株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728166A (en) * 1967-01-11 1973-04-17 Ibm Semiconductor device fabrication method and product thereby
JPS507909B1 (enExample) * 1969-08-04 1975-03-31
JPS4844830B1 (enExample) * 1969-08-21 1973-12-27 Tokyo Shibaura Electric Co
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
US3765969A (en) * 1970-07-13 1973-10-16 Bell Telephone Labor Inc Precision etching of semiconductors
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
US3883948A (en) * 1974-01-02 1975-05-20 Signetics Corp Semiconductor structure and method

Also Published As

Publication number Publication date
NL7611523A (nl) 1977-04-26
FR2332618A1 (fr) 1977-06-17
FR2332618B1 (enExample) 1978-06-30
DE2651423A1 (de) 1977-05-26
JPS5264884A (en) 1977-05-28
CA1049156A (en) 1979-02-20
US3998674A (en) 1976-12-21
IT1077022B (it) 1985-04-27
JPS5419755B2 (enExample) 1979-07-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee