IT1066271B - Procedimento e dispositivo per la fusione a zona senza crogiolo di aste di semiconduttore - Google Patents

Procedimento e dispositivo per la fusione a zona senza crogiolo di aste di semiconduttore

Info

Publication number
IT1066271B
IT1066271B IT5018776A IT5018776A IT1066271B IT 1066271 B IT1066271 B IT 1066271B IT 5018776 A IT5018776 A IT 5018776A IT 5018776 A IT5018776 A IT 5018776A IT 1066271 B IT1066271 B IT 1066271B
Authority
IT
Italy
Prior art keywords
auctions
crucible
semiconductor
procedure
zone melting
Prior art date
Application number
IT5018776A
Other languages
English (en)
Italian (it)
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Application granted granted Critical
Publication of IT1066271B publication Critical patent/IT1066271B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT5018776A 1975-07-01 1976-06-28 Procedimento e dispositivo per la fusione a zona senza crogiolo di aste di semiconduttore IT1066271B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752529329 DE2529329C3 (de) 1975-07-01 1975-07-01 Verfahren zum tiegellosen Zonenschmelzen

Publications (1)

Publication Number Publication Date
IT1066271B true IT1066271B (it) 1985-03-04

Family

ID=5950392

Family Applications (1)

Application Number Title Priority Date Filing Date
IT5018776A IT1066271B (it) 1975-07-01 1976-06-28 Procedimento e dispositivo per la fusione a zona senza crogiolo di aste di semiconduttore

Country Status (8)

Country Link
JP (1) JPS526309A (da)
BE (1) BE843542A (da)
DE (1) DE2529329C3 (da)
DK (1) DK147438C (da)
FR (1) FR2315993A1 (da)
GB (1) GB1561112A (da)
IT (1) IT1066271B (da)
NL (1) NL7606167A (da)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPS63307186A (ja) * 1987-06-05 1988-12-14 Shin Etsu Handotai Co Ltd 晶出結晶径制御装置
JP3841866B2 (ja) * 1996-03-04 2006-11-08 三菱電機株式会社 再結晶化材料の製法、その製造装置および加熱方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE631568A (da) * 1962-04-27
FR2238306A2 (en) * 1972-07-28 1975-02-14 Koudriavtzeff Basile Oscillating mirror system for TV cameras etc. - has inclined objective mirror driven by rotating disc via linkage rod and slider
BE795488A (fr) * 1972-09-28 1973-05-29 Siemens Ag Procede de fusion par zones sans creuset d'un barreau semi-conducteur
DE2332968C3 (de) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes

Also Published As

Publication number Publication date
GB1561112A (en) 1980-02-13
DK147438C (da) 1985-02-11
DE2529329A1 (de) 1977-01-13
DK294076A (da) 1977-01-02
JPS5617313B2 (da) 1981-04-21
DK147438B (da) 1984-08-06
DE2529329C3 (de) 1982-06-16
FR2315993A1 (fr) 1977-01-28
NL7606167A (nl) 1977-01-04
BE843542A (fr) 1976-12-29
DE2529329B2 (de) 1978-03-02
JPS526309A (en) 1977-01-18
FR2315993B1 (da) 1979-06-22

Similar Documents

Publication Publication Date Title
SE7600215L (sv) Kylkropp for kylning av tyristorer
IT1090556B (it) Apparecchio e procedimento per l'atomizzazione di metalli fusi
FR2307281A1 (fr) Procede et dispositif pour la fabrication technique de porte-objets prerevetus
JPS5239377A (en) Method of manufacturing semiconductor device
BR8005816A (pt) Semicondutor de potencia
IT1066265B (it) Procedimento per produrre aste di silicio monocristalline
IT1055100B (it) Processo di rivelazione quantitativa specifica dei composti solforati e dispositivi per la messa in opera di tale prcesso
IT1062680B (it) Procedimento e dispositivo per trafilare semiconduttori mediante fusione a zona
IT1207935B (it) Procedimento e dispositivo per la fabbricazione di sferette di materiale vetroso
IT1112065B (it) Procedimento per la produzione di triclorosinalo e tetracloruro di silicio
IT1091157B (it) Procedimento e dispositivo per la produzione di imballaggi
JPS51134576A (en) Method of manufacturing semiconductor device
IT1069679B (it) Procedimento e dispositivo per la produzione di monocristalli preformati
IT1063263B (it) Dispositivo per la deposizione di materiale semiconduttore
AU508674B2 (en) Glass forthe Passivation of Semiconductor Devices
BR7603085A (pt) Processo aperfeicoado de tratamento termico de material finamente granulado
FR2297271A1 (fr) Dispositif pour la fabrication de materiau en nappes
IT1079005B (it) Procedimento ed apparecchio per la produzione di silicio di elevata purezza
IT1066271B (it) Procedimento e dispositivo per la fusione a zona senza crogiolo di aste di semiconduttore
IT1040998B (it) Materozza per la produzione di lingotti fusi sotto elettroscoria
IT1073874B (it) Dispositivo a semiconduttore rivelatore di sollecitazioni e procedimento di produzione
IT1117104B (it) Procedimento e dispositivo per la produzione di monocristalli preformati
IT1069660B (it) Procedimento e dispositivo per la fabbricazione di sacchetti
IT1078788B (it) Dispositivo per l'applicazione di preparazioni su pezze di materiale
FR2335045A1 (fr) Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant