JPS526309A - Temperature zone melting process using no crucible - Google Patents

Temperature zone melting process using no crucible

Info

Publication number
JPS526309A
JPS526309A JP7454876A JP7454876A JPS526309A JP S526309 A JPS526309 A JP S526309A JP 7454876 A JP7454876 A JP 7454876A JP 7454876 A JP7454876 A JP 7454876A JP S526309 A JPS526309 A JP S526309A
Authority
JP
Japan
Prior art keywords
crucible
temperature zone
melting process
zone melting
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7454876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5617313B2 (da
Inventor
Adorufu Gaabaa Hansu
Herutsuaa Heintsu
Hiyubaa Anton
Ofuenmashiya Horukaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS526309A publication Critical patent/JPS526309A/ja
Publication of JPS5617313B2 publication Critical patent/JPS5617313B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7454876A 1975-07-01 1976-06-25 Temperature zone melting process using no crucible Granted JPS526309A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752529329 DE2529329C3 (de) 1975-07-01 1975-07-01 Verfahren zum tiegellosen Zonenschmelzen

Publications (2)

Publication Number Publication Date
JPS526309A true JPS526309A (en) 1977-01-18
JPS5617313B2 JPS5617313B2 (da) 1981-04-21

Family

ID=5950392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7454876A Granted JPS526309A (en) 1975-07-01 1976-06-25 Temperature zone melting process using no crucible

Country Status (8)

Country Link
JP (1) JPS526309A (da)
BE (1) BE843542A (da)
DE (1) DE2529329C3 (da)
DK (1) DK147438C (da)
FR (1) FR2315993A1 (da)
GB (1) GB1561112A (da)
IT (1) IT1066271B (da)
NL (1) NL7606167A (da)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPS63307186A (ja) * 1987-06-05 1988-12-14 Shin Etsu Handotai Co Ltd 晶出結晶径制御装置
JP3841866B2 (ja) * 1996-03-04 2006-11-08 三菱電機株式会社 再結晶化材料の製法、その製造装置および加熱方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE631568A (da) * 1962-04-27
FR2238306A2 (en) * 1972-07-28 1975-02-14 Koudriavtzeff Basile Oscillating mirror system for TV cameras etc. - has inclined objective mirror driven by rotating disc via linkage rod and slider
BE795488A (fr) * 1972-09-28 1973-05-29 Siemens Ag Procede de fusion par zones sans creuset d'un barreau semi-conducteur
DE2332968C3 (de) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes

Also Published As

Publication number Publication date
GB1561112A (en) 1980-02-13
DK147438C (da) 1985-02-11
DE2529329A1 (de) 1977-01-13
DK294076A (da) 1977-01-02
JPS5617313B2 (da) 1981-04-21
DK147438B (da) 1984-08-06
DE2529329C3 (de) 1982-06-16
FR2315993A1 (fr) 1977-01-28
NL7606167A (nl) 1977-01-04
BE843542A (fr) 1976-12-29
DE2529329B2 (de) 1978-03-02
IT1066271B (it) 1985-03-04
FR2315993B1 (da) 1979-06-22

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