IT1066271B - PROCEDURE AND DEVICE FOR ZONE MELTING OF SEMICONDUCTOR AUCTIONS WITHOUT A CRUCIBLE - Google Patents

PROCEDURE AND DEVICE FOR ZONE MELTING OF SEMICONDUCTOR AUCTIONS WITHOUT A CRUCIBLE

Info

Publication number
IT1066271B
IT1066271B IT5018776A IT5018776A IT1066271B IT 1066271 B IT1066271 B IT 1066271B IT 5018776 A IT5018776 A IT 5018776A IT 5018776 A IT5018776 A IT 5018776A IT 1066271 B IT1066271 B IT 1066271B
Authority
IT
Italy
Prior art keywords
auctions
crucible
semiconductor
procedure
zone melting
Prior art date
Application number
IT5018776A
Other languages
Italian (it)
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Application granted granted Critical
Publication of IT1066271B publication Critical patent/IT1066271B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT5018776A 1975-07-01 1976-06-28 PROCEDURE AND DEVICE FOR ZONE MELTING OF SEMICONDUCTOR AUCTIONS WITHOUT A CRUCIBLE IT1066271B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752529329 DE2529329C3 (en) 1975-07-01 1975-07-01 Process for crucible zone melting

Publications (1)

Publication Number Publication Date
IT1066271B true IT1066271B (en) 1985-03-04

Family

ID=5950392

Family Applications (1)

Application Number Title Priority Date Filing Date
IT5018776A IT1066271B (en) 1975-07-01 1976-06-28 PROCEDURE AND DEVICE FOR ZONE MELTING OF SEMICONDUCTOR AUCTIONS WITHOUT A CRUCIBLE

Country Status (8)

Country Link
JP (1) JPS526309A (en)
BE (1) BE843542A (en)
DE (1) DE2529329C3 (en)
DK (1) DK147438C (en)
FR (1) FR2315993A1 (en)
GB (1) GB1561112A (en)
IT (1) IT1066271B (en)
NL (1) NL7606167A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPS63307186A (en) * 1987-06-05 1988-12-14 Shin Etsu Handotai Co Ltd Crystal diameter controller in crystallization
JP3841866B2 (en) 1996-03-04 2006-11-08 三菱電機株式会社 Manufacturing method of recrystallized material, manufacturing apparatus thereof, and heating method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2238306A2 (en) * 1972-07-28 1975-02-14 Koudriavtzeff Basile Oscillating mirror system for TV cameras etc. - has inclined objective mirror driven by rotating disc via linkage rod and slider
DE2332968C3 (en) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Device for controlling the diameter of a semiconductor rod
BE795488A (en) * 1972-09-28 1973-05-29 Siemens Ag MELTING PROCESS BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR

Also Published As

Publication number Publication date
FR2315993B1 (en) 1979-06-22
GB1561112A (en) 1980-02-13
DK294076A (en) 1977-01-02
BE843542A (en) 1976-12-29
FR2315993A1 (en) 1977-01-28
DE2529329C3 (en) 1982-06-16
DE2529329B2 (en) 1978-03-02
NL7606167A (en) 1977-01-04
DE2529329A1 (en) 1977-01-13
DK147438B (en) 1984-08-06
JPS5617313B2 (en) 1981-04-21
JPS526309A (en) 1977-01-18
DK147438C (en) 1985-02-11

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