DK294076A - PROCEDURE FOR CRUEL-FREE ZONE MELTING - Google Patents

PROCEDURE FOR CRUEL-FREE ZONE MELTING

Info

Publication number
DK294076A
DK294076A DK294076A DK294076A DK294076A DK 294076 A DK294076 A DK 294076A DK 294076 A DK294076 A DK 294076A DK 294076 A DK294076 A DK 294076A DK 294076 A DK294076 A DK 294076A
Authority
DK
Denmark
Prior art keywords
cruel
procedure
free zone
zone melting
melting
Prior art date
Application number
DK294076A
Other languages
Danish (da)
Other versions
DK147438C (en
DK147438B (en
Inventor
H A Gerber
A Huber
H Herzer
V Ofenmacher
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of DK294076A publication Critical patent/DK294076A/en
Publication of DK147438B publication Critical patent/DK147438B/en
Application granted granted Critical
Publication of DK147438C publication Critical patent/DK147438C/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK294076A 1975-07-01 1976-06-30 METHOD OF DIGEL-FREE ZONE MELIGATION OF A VERTICALLY ORIENTED SEMICONDUCTOR TO MANAGE THE DIAMETER DK147438C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2529329 1975-07-01
DE19752529329 DE2529329C3 (en) 1975-07-01 1975-07-01 Process for crucible zone melting

Publications (3)

Publication Number Publication Date
DK294076A true DK294076A (en) 1977-01-02
DK147438B DK147438B (en) 1984-08-06
DK147438C DK147438C (en) 1985-02-11

Family

ID=5950392

Family Applications (1)

Application Number Title Priority Date Filing Date
DK294076A DK147438C (en) 1975-07-01 1976-06-30 METHOD OF DIGEL-FREE ZONE MELIGATION OF A VERTICALLY ORIENTED SEMICONDUCTOR TO MANAGE THE DIAMETER

Country Status (8)

Country Link
JP (1) JPS526309A (en)
BE (1) BE843542A (en)
DE (1) DE2529329C3 (en)
DK (1) DK147438C (en)
FR (1) FR2315993A1 (en)
GB (1) GB1561112A (en)
IT (1) IT1066271B (en)
NL (1) NL7606167A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPS63307186A (en) * 1987-06-05 1988-12-14 Shin Etsu Handotai Co Ltd Crystal diameter controller in crystallization
JP3841866B2 (en) * 1996-03-04 2006-11-08 三菱電機株式会社 Manufacturing method of recrystallized material, manufacturing apparatus thereof, and heating method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2238306A2 (en) * 1972-07-28 1975-02-14 Koudriavtzeff Basile Oscillating mirror system for TV cameras etc. - has inclined objective mirror driven by rotating disc via linkage rod and slider
DE2332968C3 (en) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Device for controlling the diameter of a semiconductor rod
BE795488A (en) * 1972-09-28 1973-05-29 Siemens Ag MELTING PROCESS BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR

Also Published As

Publication number Publication date
DK147438C (en) 1985-02-11
DE2529329B2 (en) 1978-03-02
GB1561112A (en) 1980-02-13
IT1066271B (en) 1985-03-04
FR2315993A1 (en) 1977-01-28
JPS5617313B2 (en) 1981-04-21
DE2529329A1 (en) 1977-01-13
FR2315993B1 (en) 1979-06-22
BE843542A (en) 1976-12-29
DK147438B (en) 1984-08-06
DE2529329C3 (en) 1982-06-16
JPS526309A (en) 1977-01-18
NL7606167A (en) 1977-01-04

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Legal Events

Date Code Title Description
PBP Patent lapsed