IT1049525B - Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato - Google Patents
Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevatoInfo
- Publication number
- IT1049525B IT1049525B IT24130/73A IT2413073A IT1049525B IT 1049525 B IT1049525 B IT 1049525B IT 24130/73 A IT24130/73 A IT 24130/73A IT 2413073 A IT2413073 A IT 2413073A IT 1049525 B IT1049525 B IT 1049525B
- Authority
- IT
- Italy
- Prior art keywords
- resistance
- reverse
- voltages
- high value
- semiconductive device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3975972A JPS5320194B2 (en:Method) | 1972-04-20 | 1972-04-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1049525B true IT1049525B (it) | 1981-02-10 |
Family
ID=12561864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24130/73A IT1049525B (it) | 1972-04-20 | 1973-05-15 | Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5320194B2 (en:Method) |
| CA (1) | CA985794A (en:Method) |
| DE (1) | DE2320579C3 (en:Method) |
| FR (1) | FR2181075B1 (en:Method) |
| GB (1) | GB1427014A (en:Method) |
| IT (1) | IT1049525B (en:Method) |
| NL (1) | NL7305642A (en:Method) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH594989A5 (en:Method) * | 1976-09-03 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| CH633907A5 (de) * | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
| DE3832750A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterbauelement |
| DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
| GB2237930A (en) * | 1989-11-01 | 1991-05-15 | Philips Electronic Associated | A semiconductor device and method of manufacturing a semiconductor device |
| US6011298A (en) * | 1996-12-31 | 2000-01-04 | Stmicroelectronics, Inc. | High voltage termination with buried field-shaping region |
| DE19930783A1 (de) * | 1999-07-03 | 2001-01-04 | Bosch Gmbh Robert | Halbleiterbauelement |
| GB2403850B (en) * | 2000-10-31 | 2005-05-11 | Fuji Electric Co Ltd | Semiconductor device |
| GB2373634B (en) | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
| JP5011611B2 (ja) | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
| US9236458B2 (en) * | 2013-07-11 | 2016-01-12 | Infineon Technologies Ag | Bipolar transistor and a method for manufacturing a bipolar transistor |
| CN106505092B (zh) * | 2016-08-18 | 2024-05-14 | 全球能源互联网研究院 | 一种垂直型半导体器件的双面终端结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1030050A (en) * | 1963-11-13 | 1966-05-18 | Motorola Inc | Punchthrough breakdown rectifier |
| GB1078273A (en) * | 1964-10-19 | 1967-08-09 | Sony Corp | Semiconductor device |
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| DE1614751A1 (de) * | 1967-01-07 | 1970-12-03 | Telefunken Patent | Halbleiteranordnung |
| DE1789043A1 (de) * | 1967-10-14 | 1972-01-05 | Sgs Sa | Mit Schutzringen versehene Planar-Halbleitervorrichtungen |
-
1972
- 1972-04-20 JP JP3975972A patent/JPS5320194B2/ja not_active Expired
-
1973
- 1973-04-18 GB GB1869073A patent/GB1427014A/en not_active Expired
- 1973-04-19 CA CA169,182A patent/CA985794A/en not_active Expired
- 1973-04-19 NL NL7305642A patent/NL7305642A/xx not_active Application Discontinuation
- 1973-04-20 FR FR7314645A patent/FR2181075B1/fr not_active Expired
- 1973-04-21 DE DE2320579A patent/DE2320579C3/de not_active Expired
- 1973-05-15 IT IT24130/73A patent/IT1049525B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS493580A (en:Method) | 1974-01-12 |
| DE2320579C3 (de) | 1983-11-10 |
| NL7305642A (en:Method) | 1973-10-23 |
| JPS5320194B2 (en:Method) | 1978-06-24 |
| DE2320579A1 (de) | 1973-11-08 |
| FR2181075A1 (en:Method) | 1973-11-30 |
| GB1427014A (en) | 1976-03-03 |
| DE2320579B2 (de) | 1976-10-28 |
| CA985794A (en) | 1976-03-16 |
| FR2181075B1 (en:Method) | 1977-12-30 |
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