IT1049525B - Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato - Google Patents

Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato

Info

Publication number
IT1049525B
IT1049525B IT2413073A IT2413073A IT1049525B IT 1049525 B IT1049525 B IT 1049525B IT 2413073 A IT2413073 A IT 2413073A IT 2413073 A IT2413073 A IT 2413073A IT 1049525 B IT1049525 B IT 1049525B
Authority
IT
Italy
Prior art keywords
resistance
reverse
voltages
high value
semiconductive device
Prior art date
Application number
IT2413073A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1049525B publication Critical patent/IT1049525B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
IT2413073A 1972-04-20 1973-05-15 Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato IT1049525B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3975972A JPS5320194B2 (it) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
IT1049525B true IT1049525B (it) 1981-02-10

Family

ID=12561864

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2413073A IT1049525B (it) 1972-04-20 1973-05-15 Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato

Country Status (7)

Country Link
JP (1) JPS5320194B2 (it)
CA (1) CA985794A (it)
DE (1) DE2320579C3 (it)
FR (1) FR2181075B1 (it)
GB (1) GB1427014A (it)
IT (1) IT1049525B (it)
NL (1) NL7305642A (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH594989A5 (it) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor
GB2237930A (en) * 1989-11-01 1991-05-15 Philips Electronic Associated A semiconductor device and method of manufacturing a semiconductor device
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
DE19930783A1 (de) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Halbleiterbauelement
GB2373634B (en) 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
GB2403850B (en) * 2000-10-31 2005-05-11 Fuji Electric Co Ltd Semiconductor device
JP5011611B2 (ja) 2001-06-12 2012-08-29 富士電機株式会社 半導体装置
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
CN106505092B (zh) * 2016-08-18 2024-05-14 全球能源互联网研究院 一种垂直型半导体器件的双面终端结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
GB1078273A (en) * 1964-10-19 1967-08-09 Sony Corp Semiconductor device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
DE1614751A1 (de) * 1967-01-07 1970-12-03 Telefunken Patent Halbleiteranordnung
DE1789043A1 (de) * 1967-10-14 1972-01-05 Sgs Sa Mit Schutzringen versehene Planar-Halbleitervorrichtungen

Also Published As

Publication number Publication date
FR2181075A1 (it) 1973-11-30
DE2320579A1 (de) 1973-11-08
CA985794A (en) 1976-03-16
NL7305642A (it) 1973-10-23
JPS5320194B2 (it) 1978-06-24
GB1427014A (en) 1976-03-03
FR2181075B1 (it) 1977-12-30
JPS493580A (it) 1974-01-12
DE2320579B2 (de) 1976-10-28
DE2320579C3 (de) 1983-11-10

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