JPS493580A - - Google Patents
Info
- Publication number
- JPS493580A JPS493580A JP3975972A JP3975972A JPS493580A JP S493580 A JPS493580 A JP S493580A JP 3975972 A JP3975972 A JP 3975972A JP 3975972 A JP3975972 A JP 3975972A JP S493580 A JPS493580 A JP S493580A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3975972A JPS5320194B2 (it) | 1972-04-20 | 1972-04-20 | |
| GB1869073A GB1427014A (en) | 1972-04-20 | 1973-04-18 | Semiconductor devices |
| CA169,182A CA985794A (en) | 1972-04-20 | 1973-04-19 | Semiconductor device with high voltage breakdown resistance |
| NL7305642A NL7305642A (it) | 1972-04-20 | 1973-04-19 | |
| FR7314645A FR2181075B1 (it) | 1972-04-20 | 1973-04-20 | |
| DE19732320579 DE2320579C3 (de) | 1972-04-20 | 1973-04-21 | Schutzanordnung für ein planares Halbleiterbauelement |
| IT2413073A IT1049525B (it) | 1972-04-20 | 1973-05-15 | Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato |
| US05/520,115 US4003072A (en) | 1972-04-20 | 1974-11-01 | Semiconductor device with high voltage breakdown resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3975972A JPS5320194B2 (it) | 1972-04-20 | 1972-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS493580A true JPS493580A (it) | 1974-01-12 |
| JPS5320194B2 JPS5320194B2 (it) | 1978-06-24 |
Family
ID=12561864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3975972A Expired JPS5320194B2 (it) | 1972-04-20 | 1972-04-20 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5320194B2 (it) |
| CA (1) | CA985794A (it) |
| DE (1) | DE2320579C3 (it) |
| FR (1) | FR2181075B1 (it) |
| GB (1) | GB1427014A (it) |
| IT (1) | IT1049525B (it) |
| NL (1) | NL7305642A (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH594989A5 (it) * | 1976-09-03 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| CH633907A5 (de) * | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
| DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
| DE3832750A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterbauelement |
| GB2237930A (en) * | 1989-11-01 | 1991-05-15 | Philips Electronic Associated | A semiconductor device and method of manufacturing a semiconductor device |
| US6011298A (en) * | 1996-12-31 | 2000-01-04 | Stmicroelectronics, Inc. | High voltage termination with buried field-shaping region |
| DE19930783A1 (de) * | 1999-07-03 | 2001-01-04 | Bosch Gmbh Robert | Halbleiterbauelement |
| GB2403346B (en) * | 2000-10-31 | 2005-05-11 | Fuji Electric Co Ltd | Semiconductor device |
| GB2373634B (en) | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
| JP5011611B2 (ja) | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
| US9236458B2 (en) * | 2013-07-11 | 2016-01-12 | Infineon Technologies Ag | Bipolar transistor and a method for manufacturing a bipolar transistor |
| CN106505092B (zh) * | 2016-08-18 | 2024-05-14 | 全球能源互联网研究院 | 一种垂直型半导体器件的双面终端结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1030050A (en) * | 1963-11-13 | 1966-05-18 | Motorola Inc | Punchthrough breakdown rectifier |
| GB1078273A (en) * | 1964-10-19 | 1967-08-09 | Sony Corp | Semiconductor device |
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| DE1614751A1 (de) * | 1967-01-07 | 1970-12-03 | Telefunken Patent | Halbleiteranordnung |
| DE1789043A1 (de) * | 1967-10-14 | 1972-01-05 | Sgs Sa | Mit Schutzringen versehene Planar-Halbleitervorrichtungen |
-
1972
- 1972-04-20 JP JP3975972A patent/JPS5320194B2/ja not_active Expired
-
1973
- 1973-04-18 GB GB1869073A patent/GB1427014A/en not_active Expired
- 1973-04-19 CA CA169,182A patent/CA985794A/en not_active Expired
- 1973-04-19 NL NL7305642A patent/NL7305642A/xx not_active Application Discontinuation
- 1973-04-20 FR FR7314645A patent/FR2181075B1/fr not_active Expired
- 1973-04-21 DE DE19732320579 patent/DE2320579C3/de not_active Expired
- 1973-05-15 IT IT2413073A patent/IT1049525B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2181075B1 (it) | 1977-12-30 |
| NL7305642A (it) | 1973-10-23 |
| CA985794A (en) | 1976-03-16 |
| IT1049525B (it) | 1981-02-10 |
| JPS5320194B2 (it) | 1978-06-24 |
| DE2320579B2 (de) | 1976-10-28 |
| DE2320579A1 (de) | 1973-11-08 |
| FR2181075A1 (it) | 1973-11-30 |
| DE2320579C3 (de) | 1983-11-10 |
| GB1427014A (en) | 1976-03-03 |