CA985794A - Semiconductor device with high voltage breakdown resistance - Google Patents

Semiconductor device with high voltage breakdown resistance

Info

Publication number
CA985794A
CA985794A CA169,182A CA169182A CA985794A CA 985794 A CA985794 A CA 985794A CA 169182 A CA169182 A CA 169182A CA 985794 A CA985794 A CA 985794A
Authority
CA
Canada
Prior art keywords
semiconductor device
high voltage
voltage breakdown
breakdown resistance
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA169,182A
Other languages
English (en)
Other versions
CA169182S (en
Inventor
Takeshi Matsushita
Hisao Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA985794A publication Critical patent/CA985794A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
CA169,182A 1972-04-20 1973-04-19 Semiconductor device with high voltage breakdown resistance Expired CA985794A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3975972A JPS5320194B2 (en:Method) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
CA985794A true CA985794A (en) 1976-03-16

Family

ID=12561864

Family Applications (1)

Application Number Title Priority Date Filing Date
CA169,182A Expired CA985794A (en) 1972-04-20 1973-04-19 Semiconductor device with high voltage breakdown resistance

Country Status (7)

Country Link
JP (1) JPS5320194B2 (en:Method)
CA (1) CA985794A (en:Method)
DE (1) DE2320579C3 (en:Method)
FR (1) FR2181075B1 (en:Method)
GB (1) GB1427014A (en:Method)
IT (1) IT1049525B (en:Method)
NL (1) NL7305642A (en:Method)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH594989A5 (en:Method) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor
GB2237930A (en) * 1989-11-01 1991-05-15 Philips Electronic Associated A semiconductor device and method of manufacturing a semiconductor device
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
DE19930783A1 (de) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Halbleiterbauelement
GB2403850B (en) * 2000-10-31 2005-05-11 Fuji Electric Co Ltd Semiconductor device
GB2373634B (en) 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
JP5011611B2 (ja) 2001-06-12 2012-08-29 富士電機株式会社 半導体装置
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
CN106505092B (zh) * 2016-08-18 2024-05-14 全球能源互联网研究院 一种垂直型半导体器件的双面终端结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
GB1078273A (en) * 1964-10-19 1967-08-09 Sony Corp Semiconductor device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
DE1614751A1 (de) * 1967-01-07 1970-12-03 Telefunken Patent Halbleiteranordnung
DE1789043A1 (de) * 1967-10-14 1972-01-05 Sgs Sa Mit Schutzringen versehene Planar-Halbleitervorrichtungen

Also Published As

Publication number Publication date
JPS493580A (en:Method) 1974-01-12
DE2320579C3 (de) 1983-11-10
NL7305642A (en:Method) 1973-10-23
IT1049525B (it) 1981-02-10
JPS5320194B2 (en:Method) 1978-06-24
DE2320579A1 (de) 1973-11-08
FR2181075A1 (en:Method) 1973-11-30
GB1427014A (en) 1976-03-03
DE2320579B2 (de) 1976-10-28
FR2181075B1 (en:Method) 1977-12-30

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