IT1046053B - Dispositivo semiconduttore presentante strutture a transistori di tipo complementare e metodo di fabbricazione dello stesso - Google Patents

Dispositivo semiconduttore presentante strutture a transistori di tipo complementare e metodo di fabbricazione dello stesso

Info

Publication number
IT1046053B
IT1046053B IT24362/75A IT2436275A IT1046053B IT 1046053 B IT1046053 B IT 1046053B IT 24362/75 A IT24362/75 A IT 24362/75A IT 2436275 A IT2436275 A IT 2436275A IT 1046053 B IT1046053 B IT 1046053B
Authority
IT
Italy
Prior art keywords
semiconductor device
transistor structures
complementary type
device presenting
manufacturing itself
Prior art date
Application number
IT24362/75A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1046053B publication Critical patent/IT1046053B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT24362/75A 1974-06-18 1975-06-13 Dispositivo semiconduttore presentante strutture a transistori di tipo complementare e metodo di fabbricazione dello stesso IT1046053B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7408110A NL7408110A (nl) 1974-06-18 1974-06-18 Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
IT1046053B true IT1046053B (it) 1980-06-30

Family

ID=19821569

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24362/75A IT1046053B (it) 1974-06-18 1975-06-13 Dispositivo semiconduttore presentante strutture a transistori di tipo complementare e metodo di fabbricazione dello stesso

Country Status (13)

Country Link
JP (1) JPS5112778A (fr)
AU (1) AU499052B2 (fr)
BE (1) BE830286A (fr)
BR (1) BR7503777A (fr)
CA (1) CA1029134A (fr)
CH (1) CH588166A5 (fr)
DE (1) DE2525529B2 (fr)
ES (1) ES438593A1 (fr)
FR (1) FR2275884A1 (fr)
GB (1) GB1505103A (fr)
IT (1) IT1046053B (fr)
NL (1) NL7408110A (fr)
SE (1) SE407996B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4232328A (en) * 1978-12-20 1980-11-04 Bell Telephone Laboratories, Incorporated Dielectrically-isolated integrated circuit complementary transistors for high voltage use
GB2060252B (en) * 1979-09-17 1984-02-22 Nippon Telegraph & Telephone Mutually isolated complementary semiconductor elements
JPS57204898A (en) * 1981-06-02 1982-12-15 Saito Masayasu Pump for vessel for dividing liquid little by little
JP2531824Y2 (ja) * 1987-02-13 1997-04-09 株式会社 神崎高級工機製作所 油圧クラツチ式変速装置
JPS63142451U (fr) * 1987-03-12 1988-09-20
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
US7076124B2 (en) * 2002-12-20 2006-07-11 Avago Technologies, Ltd. Integrated multichannel laser driver and photodetector receiver
EP4372792A1 (fr) * 2022-11-16 2024-05-22 Infineon Technologies Dresden GmbH & Co . KG Dispositif semi-conducteur

Also Published As

Publication number Publication date
FR2275884A1 (fr) 1976-01-16
CH588166A5 (fr) 1977-05-31
SE7506878L (sv) 1975-12-19
GB1505103A (en) 1978-03-22
SE407996B (sv) 1979-04-30
JPS5112778A (en) 1976-01-31
ES438593A1 (es) 1977-01-16
DE2525529B2 (de) 1977-08-04
FR2275884B1 (fr) 1980-10-24
JPS5247319B2 (fr) 1977-12-01
DE2525529A1 (de) 1976-01-08
AU499052B2 (en) 1979-04-05
CA1029134A (fr) 1978-04-04
BE830286A (fr) 1975-12-16
BR7503777A (pt) 1976-07-06
NL7408110A (nl) 1975-12-22
AU8214975A (en) 1976-12-23

Similar Documents

Publication Publication Date Title
IT1025054B (it) Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso
IT1044030B (it) Struttura a semiconduttore e suo procedimento di fabbricazione
SE405659B (sv) Sett att tillverka halvledaranordningar
IT1029146B (it) Valvola a farfalla di grandi dimensioni
AT343602B (de) Spezifische sorbentien und ihr herstellungsverfahren
IT1034720B (it) Dispositivo semiconduttore
IT1070048B (it) Metodo di fabbriacazione di un dispositivo semiconduttore e dispositivo fabbricato con detto metodo
IT1037558B (it) Metodo di fabbricazione di un dispositivo smemiconduttore
IT1044592B (it) Dispositivo semiconduttor
IT1028325B (it) Transistore bipolare e metodo di fabbricazione dello stesso
IT1046053B (it) Dispositivo semiconduttore presentante strutture a transistori di tipo complementare e metodo di fabbricazione dello stesso
IT1037228B (it) Dispositivo semiconduttore
IT1027983B (it) Dispositivo spinterometro e metodo di costruzione dello stesso
IT1010922B (it) Dispositivo a rifrangenza e metodo di fabbricazione dello stesso
IT1009603B (it) Dispositivo semiconduttore e metodo di fabbricazione dello stesso
SE408352B (sv) Hallare med vermebortledande egenskaper for en halvledaranordning och sett for dess framstellning
AT376845B (de) Speicher-feldeffekttransistor
SE7505941L (sv) Halvledaranordning
IT1039154B (it) Miglioramento a processi di fabricazione di dispositivi impieganti semiconduttori particolarmente strutture mos
SE7604827L (sv) Forfarande for framstellning av en halvledare jemte halvledare framstelld enligt detta forfarande
IT957711B (it) Proiettore a tenuta e metodo per fabbricarlo
IT1042581B (it) Procedimento per fabricare transistor verticali complementtari in tegrati e transistor ottenuti
SE403870B (sv) Halvledaranordning
SE7513565L (sv) Sett att framstella en halvledaranordning och enligt settet framstelld halvledaranordning
IT1064230B (it) Dispositivo semiconduttore e metodo di fabbricazione dello stesso