IT1039154B - Miglioramento a processi di fabricazione di dispositivi impieganti semiconduttori particolarmente strutture mos - Google Patents

Miglioramento a processi di fabricazione di dispositivi impieganti semiconduttori particolarmente strutture mos

Info

Publication number
IT1039154B
IT1039154B IT2458375A IT2458375A IT1039154B IT 1039154 B IT1039154 B IT 1039154B IT 2458375 A IT2458375 A IT 2458375A IT 2458375 A IT2458375 A IT 2458375A IT 1039154 B IT1039154 B IT 1039154B
Authority
IT
Italy
Prior art keywords
improvement
devices
manufacturing processes
mos structures
particularly mos
Prior art date
Application number
IT2458375A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1039154B publication Critical patent/IT1039154B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT2458375A 1974-08-12 1975-06-20 Miglioramento a processi di fabricazione di dispositivi impieganti semiconduttori particolarmente strutture mos IT1039154B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49641874A 1974-08-12 1974-08-12

Publications (1)

Publication Number Publication Date
IT1039154B true IT1039154B (it) 1979-12-10

Family

ID=23972541

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2458375A IT1039154B (it) 1974-08-12 1975-06-20 Miglioramento a processi di fabricazione di dispositivi impieganti semiconduttori particolarmente strutture mos

Country Status (4)

Country Link
JP (1) JPS5141973A (it)
DE (1) DE2530730A1 (it)
FR (1) FR2282163A1 (it)
IT (1) IT1039154B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116721A (en) * 1977-11-25 1978-09-26 International Business Machines Corporation Gate charge neutralization for insulated gate field-effect transistors
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
EP0213972A1 (en) * 1985-08-30 1987-03-11 SILICONIX Incorporated Method for shifting the threshold voltage of DMOS transistors
JPH03190230A (ja) * 1989-12-20 1991-08-20 Fujitsu Ltd 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
DE2245165A1 (de) * 1971-09-18 1973-04-26 Fujitsu Ltd Verfahren zum herstellen einer halbleitervorrichtung
IT1012166B (it) * 1973-06-08 1977-03-10 Rca Corp Dispositivo semiconduttore

Also Published As

Publication number Publication date
JPS5141973A (ja) 1976-04-08
DE2530730A1 (de) 1976-02-26
FR2282163B1 (it) 1977-07-22
FR2282163A1 (fr) 1976-03-12

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