IT1043162B - Circutto integrato - Google Patents

Circutto integrato

Info

Publication number
IT1043162B
IT1043162B IT28009/75A IT2800975A IT1043162B IT 1043162 B IT1043162 B IT 1043162B IT 28009/75 A IT28009/75 A IT 28009/75A IT 2800975 A IT2800975 A IT 2800975A IT 1043162 B IT1043162 B IT 1043162B
Authority
IT
Italy
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Application number
IT28009/75A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1043162B publication Critical patent/IT1043162B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/14Treatment of metallic powder
    • B22F1/142Thermal or thermo-mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/013Modifications for accelerating switching in bipolar transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Thermal Sciences (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
IT28009/75A 1974-10-09 1975-10-06 Circutto integrato IT1043162B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7413264A NL7413264A (nl) 1974-10-09 1974-10-09 Geintegreerde schakeling.

Publications (1)

Publication Number Publication Date
IT1043162B true IT1043162B (it) 1980-02-20

Family

ID=19822238

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28009/75A IT1043162B (it) 1974-10-09 1975-10-06 Circutto integrato

Country Status (16)

Country Link
US (1) US4716314A (it)
JP (1) JPS5332234B2 (it)
AR (1) AR204224A1 (it)
AT (1) AT373724B (it)
AU (1) AU498611B2 (it)
BE (1) BE834290A (it)
BR (1) BR7506541A (it)
CA (1) CA1081861A (it)
CH (1) CH599680A5 (it)
DE (1) DE2545368A1 (it)
ES (1) ES441552A1 (it)
FR (1) FR2287773A1 (it)
GB (2) GB1532427A (it)
IT (1) IT1043162B (it)
NL (1) NL7413264A (it)
SE (1) SE402183B (it)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
JPS5215255A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Integrated semiconductor logical circuit
JPS5221771U (it) * 1975-08-01 1977-02-16
JPS5261978A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production
JPS5289452A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Electronic circuit and semiconductor integrated circuit device thereof
JPS5339092A (en) * 1976-08-25 1978-04-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS5338276A (en) * 1976-09-20 1978-04-08 Toshiba Corp Semiconductor device
JPS5252378A (en) * 1976-10-01 1977-04-27 Sony Corp Semiconductor device
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit
JPS5466784A (en) * 1977-11-08 1979-05-29 Toshiba Corp Semiconductor integrated circuit device
DE2835330C3 (de) * 1978-08-11 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
JP2553249B2 (ja) * 1991-03-18 1996-11-13 株式会社東芝 半導体装置
US6150687A (en) * 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
US6191470B1 (en) 1997-07-08 2001-02-20 Micron Technology, Inc. Semiconductor-on-insulator memory cell with buried word and body lines
US6066869A (en) 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
US5914511A (en) * 1997-10-06 1999-06-22 Micron Technology, Inc. Circuit and method for a folded bit line memory using trench plate capacitor cells with body bias contacts
US6528837B2 (en) * 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US5907170A (en) 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6025225A (en) 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US6242775B1 (en) 1998-02-24 2001-06-05 Micron Technology, Inc. Circuits and methods using vertical complementary transistors
US5963469A (en) 1998-02-24 1999-10-05 Micron Technology, Inc. Vertical bipolar read access for low voltage memory cell
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US5991225A (en) * 1998-02-27 1999-11-23 Micron Technology, Inc. Programmable memory address decode array with vertical transistors
US6134175A (en) 1998-08-04 2000-10-17 Micron Technology, Inc. Memory address decode array with vertical transistors
US6208164B1 (en) * 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
EP0981162B1 (de) * 1998-08-19 2007-03-07 Infineon Technologies AG Halbleiterchip mit Oberflächenabdeckung gegen optische Untersuchung der Schaltungsstruktur
US6781170B2 (en) * 2001-05-01 2004-08-24 Lattice Semiconductor Corporation Integrated circuit base transistor structure and associated programmable cell library
JP2012234057A (ja) * 2011-05-02 2012-11-29 Elpida Memory Inc フォトマスクおよび半導体装置
US9602105B1 (en) * 2015-11-13 2017-03-21 International Business Machines Corporation Performance-on-demand IC chip design in integrated-injection logic
CN113742795A (zh) * 2020-05-27 2021-12-03 台湾积体电路制造股份有限公司 对集成电路中的半导体存储器的安全级别进行认证的方法
CN113946200B (zh) * 2021-10-18 2024-03-19 深圳大普微电子科技有限公司 电路动态电压降的检测方法、装置及电子设备和存储介质

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
NL7107040A (it) * 1971-05-22 1972-11-24
US3790817A (en) * 1972-02-14 1974-02-05 Nat Semiconductor Corp Schottky clamped ttl circuit
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
DE2262297C2 (de) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I&uarr;2&uarr;L-Aufbau
GB1507061A (en) * 1974-03-26 1978-04-12 Signetics Corp Semiconductors
US3978515A (en) * 1974-04-26 1976-08-31 Bell Telephone Laboratories, Incorporated Integrated injection logic using oxide isolation
US4065680A (en) * 1974-07-11 1977-12-27 Signetics Corporation Collector-up logic transmission gates
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof

Also Published As

Publication number Publication date
CH599680A5 (it) 1978-05-31
BR7506541A (pt) 1976-08-17
JPS5332234B2 (it) 1978-09-07
CA1081861A (en) 1980-07-15
AT373724B (de) 1984-02-10
BE834290A (fr) 1976-04-07
SE402183B (sv) 1978-06-19
AR204224A1 (es) 1975-11-28
US4716314A (en) 1987-12-29
FR2287773A1 (fr) 1976-05-07
DE2545368A1 (de) 1976-06-16
NL7413264A (nl) 1976-04-13
JPS5164386A (it) 1976-06-03
AU8548375A (en) 1977-04-21
AU498611B2 (en) 1979-03-22
SE7511160L (sv) 1976-04-12
DE2545368C2 (it) 1987-03-05
ES441552A1 (es) 1977-04-16
GB1532428A (en) 1978-11-15
FR2287773B1 (it) 1984-03-23
ATA771675A (de) 1983-06-15
GB1532427A (en) 1978-11-15

Similar Documents

Publication Publication Date Title
FR2278208A1 (fr) Circuit integre
AT373724B (de) Integrierte schaltung
SE403849B (sv) Mikroelektronisk krets
FR2336801A1 (fr) Circuit integre
DE2559729A1 (de) Integrierte schaltung
ATA326275A (de) Duennschichtschaltung
BE835930A (fr) Circuit logique
AT349065B (de) Integrierte schaltung
BE836578A (fr) Circuit correcteur
FR2335052A1 (fr) Circuit integre
SE7512588L (sv) Filterkrets
SE7514597L (sv) Avkodarkrets
SE397142B (sv) Elektrostaisk kopieringsmaskin
SE415064B (sv) Batteriladdningskrets
DK664274A (da) Squelchkredslob
AT373728B (de) Fuehlerschaltungsanordnung
SE406990B (sv) Integrerad kretsanordning
AT349067B (de) Begrenzerschaltung
AT356724B (de) Parabel-generatorschaltung
FR2290780A1 (fr) Circuit redresseur
ATA25474A (de) Schaltungsanordnung
FR2296225A1 (fr) Circuit integrateur
AT336930B (de) Integrierte schaltung
SE7504403L (sv) Strommanovrerade kretsar
SE406399B (sv) Likstromstyrkrets