IT1041938B - Procedimento di attacco chimico di fotoriserve positive - Google Patents

Procedimento di attacco chimico di fotoriserve positive

Info

Publication number
IT1041938B
IT1041938B IT26596/75A IT2659675A IT1041938B IT 1041938 B IT1041938 B IT 1041938B IT 26596/75 A IT26596/75 A IT 26596/75A IT 2659675 A IT2659675 A IT 2659675A IT 1041938 B IT1041938 B IT 1041938B
Authority
IT
Italy
Prior art keywords
photoserves
positive
chemical attack
attack procedure
procedure
Prior art date
Application number
IT26596/75A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1041938B publication Critical patent/IT1041938B/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
IT26596/75A 1974-10-03 1975-08-27 Procedimento di attacco chimico di fotoriserve positive IT1041938B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2447225A DE2447225C2 (de) 1974-10-03 1974-10-03 Verfahren zum Ablösen von positiven Photolack

Publications (1)

Publication Number Publication Date
IT1041938B true IT1041938B (it) 1980-01-10

Family

ID=5927447

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26596/75A IT1041938B (it) 1974-10-03 1975-08-27 Procedimento di attacco chimico di fotoriserve positive

Country Status (7)

Country Link
US (1) US4015986A (cg-RX-API-DMAC10.html)
JP (1) JPS5159502A (cg-RX-API-DMAC10.html)
CA (1) CA1067332A (cg-RX-API-DMAC10.html)
DE (1) DE2447225C2 (cg-RX-API-DMAC10.html)
FR (1) FR2287060A1 (cg-RX-API-DMAC10.html)
GB (1) GB1481935A (cg-RX-API-DMAC10.html)
IT (1) IT1041938B (cg-RX-API-DMAC10.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2808928A1 (de) * 1978-03-02 1979-09-06 Hoechst Ag Korrekturmittel fuer lichtgehaertete kopierschichten
US4263387A (en) * 1978-03-16 1981-04-21 Coulter Systems Corporation Lithographic printing plate and process for making same
JPS5569265A (en) * 1978-11-15 1980-05-24 Hitachi Ltd Pattern-forming method
US4383026A (en) * 1979-05-31 1983-05-10 Bell Telephone Laboratories, Incorporated Accelerated particle lithographic processing and articles so produced
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
US4427713A (en) 1983-01-17 1984-01-24 Rca Corporation Planarization technique
JPS60114575A (ja) * 1983-11-28 1985-06-21 Tokyo Ohka Kogyo Co Ltd 乾式パタ−ン形成方法
JPS60115222A (ja) * 1983-11-28 1985-06-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
US4885232A (en) * 1985-03-11 1989-12-05 Hoechst Celanese Corporation High temperature post exposure baking treatment for positive photoresist compositions
CA1308596C (en) * 1986-01-13 1992-10-13 Rohm And Haas Company Microplastic structures and method of manufacture
US4707426A (en) * 1986-02-04 1987-11-17 Sony Corporation Radiation exposure method of manufacturing a color cathode ray tube having light absorptive areas
JPH06556U (ja) * 1992-06-18 1994-01-11 日立金属株式会社 加圧鋳造機のプランジャーチップ
US5507978A (en) * 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
TW439118B (en) * 2000-02-10 2001-06-07 Winbond Electronics Corp Multilayer thin photoresist process
US6955485B2 (en) * 2002-03-01 2005-10-18 Tokyo Electron Limited Developing method and developing unit
JP2007505486A (ja) * 2003-09-09 2007-03-08 シーエスジー ソーラー アクチェンゲゼルシャフト リフローによるマスクの調整
CN100561668C (zh) * 2003-09-09 2009-11-18 Csg索拉尔有限公司 在有机树脂材料中形成开口的改进方法
CN100546006C (zh) * 2003-09-09 2009-09-30 Csg索拉尔有限公司 蚀刻硅的改进方法
US7867696B2 (en) * 2004-04-15 2011-01-11 The Boeing Company Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes
NL2004888A (en) * 2009-06-29 2010-12-30 Asml Netherlands Bv Deposition method and apparatus.
EP2502263B1 (en) * 2009-11-18 2014-09-03 3M Innovative Properties Company Wet etching method for ii-vi semiconductors
CN105578784A (zh) * 2015-12-31 2016-05-11 东莞市优森电子有限公司 一种单面pcb板的生产工艺
CN105555046B (zh) * 2015-12-31 2019-06-25 湖北碧辰科技股份有限公司 一种双面pcb板的生产工艺
EP3803510A1 (en) 2018-05-24 2021-04-14 Merck Patent GmbH Novolak/dnq based, chemically amplified photoresist
WO2020242385A1 (en) 2019-05-31 2020-12-03 Ams Sensors Singapore Pte. Ltd. Method of manufacturing a master for a replication process
KR102864915B1 (ko) 2019-11-19 2025-09-25 메르크 파텐트 게엠베하 Pag-비함유 포지티브 화학 증폭형 레지스트 조성물 및 이를 사용하는 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA572560A (en) * 1959-03-17 Western Electric Company, Incorporated Etching silicon semiconductors
DE551057C (de) * 1930-09-30 1932-05-26 Kodak Akt Ges Photographisches Umkehrverfahren
NL76414C (cg-RX-API-DMAC10.html) * 1949-07-23
DE1146755B (de) * 1959-08-17 1963-04-04 Friedr Schoembs K G Verfahren zum Entschichten von Kopierschichten aus Polyvinylalkohol auf Druckplatten und Siebdrucknetzen
NL255428A (cg-RX-API-DMAC10.html) * 1959-09-01
DE1224147B (de) * 1963-08-23 1966-09-01 Kalle Ag Verfahren zur Umkehrentwicklung von Diazo-verbindungen enthaltenden Kopierschichten
US3639185A (en) * 1969-06-30 1972-02-01 Ibm Novel etchant and process for etching thin metal films
BE755441A (fr) * 1969-08-28 1971-03-01 Du Pont Solutions de finissage pour plaques lithographiques
US3759711A (en) * 1970-09-16 1973-09-18 Eastman Kodak Co Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
FR2120365A5 (en) * 1970-12-30 1972-08-18 Applic Chim Phys Tech Elimination of pva photosensitive layers - using permanganate and thiourea acid soln
BE789196A (fr) * 1971-09-25 1973-03-22 Kalle Ag Matiere a copier photosensible
JPS4914684A (cg-RX-API-DMAC10.html) * 1972-06-02 1974-02-08
JPS4914682A (cg-RX-API-DMAC10.html) * 1972-06-05 1974-02-08
US3814641A (en) * 1972-07-20 1974-06-04 Instr Inc Process of fabricating silicon photomask
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
US3871929A (en) * 1974-01-30 1975-03-18 Allied Chem Polymeric etch resist strippers and method of using same

Also Published As

Publication number Publication date
US4015986A (en) 1977-04-05
FR2287060B1 (cg-RX-API-DMAC10.html) 1978-04-07
DE2447225C2 (de) 1983-12-22
CA1067332A (en) 1979-12-04
JPS5528061B2 (cg-RX-API-DMAC10.html) 1980-07-25
FR2287060A1 (fr) 1976-04-30
DE2447225A1 (de) 1976-04-08
JPS5159502A (en) 1976-05-24
GB1481935A (en) 1977-08-03

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