FR2287060A1 - Procede pour dissoudre une laque photosensible positive - Google Patents
Procede pour dissoudre une laque photosensible positiveInfo
- Publication number
- FR2287060A1 FR2287060A1 FR7526333A FR7526333A FR2287060A1 FR 2287060 A1 FR2287060 A1 FR 2287060A1 FR 7526333 A FR7526333 A FR 7526333A FR 7526333 A FR7526333 A FR 7526333A FR 2287060 A1 FR2287060 A1 FR 2287060A1
- Authority
- FR
- France
- Prior art keywords
- dissolving
- positive photosensitive
- photosensitive lacquer
- lacquer
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2447225A DE2447225C2 (de) | 1974-10-03 | 1974-10-03 | Verfahren zum Ablösen von positiven Photolack |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2287060A1 true FR2287060A1 (fr) | 1976-04-30 |
FR2287060B1 FR2287060B1 (fr) | 1978-04-07 |
Family
ID=5927447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7526333A Granted FR2287060A1 (fr) | 1974-10-03 | 1975-08-19 | Procede pour dissoudre une laque photosensible positive |
Country Status (7)
Country | Link |
---|---|
US (1) | US4015986A (fr) |
JP (1) | JPS5159502A (fr) |
CA (1) | CA1067332A (fr) |
DE (1) | DE2447225C2 (fr) |
FR (1) | FR2287060A1 (fr) |
GB (1) | GB1481935A (fr) |
IT (1) | IT1041938B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0003993A2 (fr) * | 1978-03-02 | 1979-09-19 | Hoechst Aktiengesellschaft | Agent de correction pour couches photosensibles durcies par la lumière |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4263387A (en) * | 1978-03-16 | 1981-04-21 | Coulter Systems Corporation | Lithographic printing plate and process for making same |
JPS5569265A (en) * | 1978-11-15 | 1980-05-24 | Hitachi Ltd | Pattern-forming method |
US4383026A (en) * | 1979-05-31 | 1983-05-10 | Bell Telephone Laboratories, Incorporated | Accelerated particle lithographic processing and articles so produced |
US4409319A (en) * | 1981-07-15 | 1983-10-11 | International Business Machines Corporation | Electron beam exposed positive resist mask process |
US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
US4427713A (en) | 1983-01-17 | 1984-01-24 | Rca Corporation | Planarization technique |
JPS6056586B2 (ja) * | 1983-04-05 | 1985-12-11 | 本田技研工業株式会社 | 溶湯鍛造装置 |
JPS60114575A (ja) * | 1983-11-28 | 1985-06-21 | Tokyo Ohka Kogyo Co Ltd | 乾式パタ−ン形成方法 |
JPS60115222A (ja) * | 1983-11-28 | 1985-06-21 | Tokyo Ohka Kogyo Co Ltd | 微細パタ−ン形成方法 |
US4885232A (en) * | 1985-03-11 | 1989-12-05 | Hoechst Celanese Corporation | High temperature post exposure baking treatment for positive photoresist compositions |
CA1308596C (fr) * | 1986-01-13 | 1992-10-13 | Rohm And Haas Company | Structure microplastique et methode de fabrication correspondante |
US4707426A (en) * | 1986-02-04 | 1987-11-17 | Sony Corporation | Radiation exposure method of manufacturing a color cathode ray tube having light absorptive areas |
JPH06556U (ja) * | 1992-06-18 | 1994-01-11 | 日立金属株式会社 | 加圧鋳造機のプランジャーチップ |
US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
US5507978A (en) * | 1995-05-08 | 1996-04-16 | Ocg Microelectronic Materials, Inc. | Novolak containing photoresist stripper composition |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
TW439118B (en) * | 2000-02-10 | 2001-06-07 | Winbond Electronics Corp | Multilayer thin photoresist process |
US6955485B2 (en) * | 2002-03-01 | 2005-10-18 | Tokyo Electron Limited | Developing method and developing unit |
EP1665346A4 (fr) * | 2003-09-09 | 2006-11-15 | Csg Solar Ag | Procede ameliore de formation d'ouvertures dans une matiere de resine organique |
EP1665353A4 (fr) * | 2003-09-09 | 2006-11-29 | Csg Solar Ag | Procede ameliore de gravure de silicium |
WO2005024959A1 (fr) * | 2003-09-09 | 2005-03-17 | Csg Solar, Ag | Reglage de masques par refusion |
US7867696B2 (en) * | 2004-04-15 | 2011-01-11 | The Boeing Company | Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes |
NL2004888A (en) * | 2009-06-29 | 2010-12-30 | Asml Netherlands Bv | Deposition method and apparatus. |
CN102668044A (zh) * | 2009-11-18 | 2012-09-12 | 3M创新有限公司 | 用于ii-vi族半导体的新型湿蚀刻剂及方法 |
CN105555046B (zh) * | 2015-12-31 | 2019-06-25 | 湖北碧辰科技股份有限公司 | 一种双面pcb板的生产工艺 |
CN105578784A (zh) * | 2015-12-31 | 2016-05-11 | 东莞市优森电子有限公司 | 一种单面pcb板的生产工艺 |
CN113939771A (zh) * | 2019-05-31 | 2022-01-14 | ams传感器新加坡私人有限公司 | 制造用于复制过程的母片的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE551057C (de) * | 1930-09-30 | 1932-05-26 | Kodak Akt Ges | Photographisches Umkehrverfahren |
FR2120365A5 (en) * | 1970-12-30 | 1972-08-18 | Applic Chim Phys Tech | Elimination of pva photosensitive layers - using permanganate and thiourea acid soln |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA572560A (fr) * | 1959-03-17 | Western Electric Company, Incorporated | Gravure chimique de semiconducteurs de silicium | |
DE907739C (de) * | 1949-07-23 | 1954-02-18 | Kalle & Co Ag | Verfahren zur Herstellung von Kopien, besonders Druckformen, mit Hilfe von Diazoverbindungen und dafuer verwendbares lichtempfindliches Material |
DE1146755B (de) * | 1959-08-17 | 1963-04-04 | Friedr Schoembs K G | Verfahren zum Entschichten von Kopierschichten aus Polyvinylalkohol auf Druckplatten und Siebdrucknetzen |
BE594514A (fr) * | 1959-09-01 | |||
DE1224147B (de) * | 1963-08-23 | 1966-09-01 | Kalle Ag | Verfahren zur Umkehrentwicklung von Diazo-verbindungen enthaltenden Kopierschichten |
US3639185A (en) * | 1969-06-30 | 1972-02-01 | Ibm | Novel etchant and process for etching thin metal films |
BE755441A (fr) * | 1969-08-28 | 1971-03-01 | Du Pont | Solutions de finissage pour plaques lithographiques |
US3759711A (en) * | 1970-09-16 | 1973-09-18 | Eastman Kodak Co | Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym |
BE789196A (fr) * | 1971-09-25 | 1973-03-22 | Kalle Ag | Matiere a copier photosensible |
JPS4914684A (fr) * | 1972-06-02 | 1974-02-08 | ||
JPS4914682A (fr) * | 1972-06-05 | 1974-02-08 | ||
US3814641A (en) * | 1972-07-20 | 1974-06-04 | Instr Inc | Process of fabricating silicon photomask |
US3930857A (en) * | 1973-05-03 | 1976-01-06 | International Business Machines Corporation | Resist process |
US3871929A (en) * | 1974-01-30 | 1975-03-18 | Allied Chem | Polymeric etch resist strippers and method of using same |
-
1974
- 1974-10-03 DE DE2447225A patent/DE2447225C2/de not_active Expired
-
1975
- 1975-08-19 FR FR7526333A patent/FR2287060A1/fr active Granted
- 1975-08-22 US US05/607,000 patent/US4015986A/en not_active Expired - Lifetime
- 1975-08-27 IT IT26596/75A patent/IT1041938B/it active
- 1975-09-05 GB GB36718/75A patent/GB1481935A/en not_active Expired
- 1975-09-23 JP JP50114390A patent/JPS5159502A/ja active Granted
- 1975-10-02 CA CA236,873A patent/CA1067332A/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE551057C (de) * | 1930-09-30 | 1932-05-26 | Kodak Akt Ges | Photographisches Umkehrverfahren |
FR2120365A5 (en) * | 1970-12-30 | 1972-08-18 | Applic Chim Phys Tech | Elimination of pva photosensitive layers - using permanganate and thiourea acid soln |
Non-Patent Citations (2)
Title |
---|
REVUE GB "JAPANESEDEWENT REPORT", VOLUME 74, NO. 15, 1974. RESUME DE LA DEMANDE JA 7414682 TOPPON PRINTING ) * |
REVUE US "I.B.M. TECHNICAL DISCLOSURE BULLETIN", VOLUME 14, NO. 10, MARS 1972, PAGES 2914 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0003993A2 (fr) * | 1978-03-02 | 1979-09-19 | Hoechst Aktiengesellschaft | Agent de correction pour couches photosensibles durcies par la lumière |
EP0003993A3 (en) * | 1978-03-02 | 1979-10-03 | Hoechst Aktiengesellschaft | Correcting medium for light-hardened photo-sensitive layers |
Also Published As
Publication number | Publication date |
---|---|
US4015986A (en) | 1977-04-05 |
IT1041938B (it) | 1980-01-10 |
JPS5528061B2 (fr) | 1980-07-25 |
JPS5159502A (en) | 1976-05-24 |
GB1481935A (en) | 1977-08-03 |
CA1067332A (fr) | 1979-12-04 |
FR2287060B1 (fr) | 1978-04-07 |
DE2447225A1 (de) | 1976-04-08 |
DE2447225C2 (de) | 1983-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |