IN2014KN01122A - - Google Patents
Info
- Publication number
- IN2014KN01122A IN2014KN01122A IN1122KON2014A IN2014KN01122A IN 2014KN01122 A IN2014KN01122 A IN 2014KN01122A IN 1122KON2014 A IN1122KON2014 A IN 1122KON2014A IN 2014KN01122 A IN2014KN01122 A IN 2014KN01122A
- Authority
- IN
- India
- Prior art keywords
- agnw
- cnts
- proceed
- tubes
- mixtures
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 3
- 239000002041 carbon nanotube Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000002042 Silver nanowire Substances 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229920002457 flexible plastic Polymers 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Carbon And Carbon Compounds (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Of Electric Cables (AREA)
- Surface Treatment Of Glass (AREA)
- ing And Chemical Polishing (AREA)
- Catalysts (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11008621.2A EP2587564A1 (de) | 2011-10-27 | 2011-10-27 | Selektives Ätzen einer Matrix, die Silber-Nanodrähte oder Kohlenstoffnanoröhrchen umfasst |
PCT/EP2012/004095 WO2013060409A1 (en) | 2011-10-27 | 2012-09-28 | Selective etching of a matrix comprising silver nano wires |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014KN01122A true IN2014KN01122A (de) | 2015-10-16 |
Family
ID=46968144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN1122KON2014 IN2014KN01122A (de) | 2011-10-27 | 2012-09-28 |
Country Status (10)
Country | Link |
---|---|
US (1) | US9379326B2 (de) |
EP (2) | EP2587564A1 (de) |
JP (1) | JP2015501541A (de) |
KR (1) | KR20140085563A (de) |
CN (1) | CN103907216A (de) |
BR (1) | BR112014009871A2 (de) |
IN (1) | IN2014KN01122A (de) |
SG (1) | SG11201401650UA (de) |
TW (1) | TWI561459B (de) |
WO (1) | WO2013060409A1 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9199870B2 (en) | 2012-05-22 | 2015-12-01 | Corning Incorporated | Electrostatic method and apparatus to form low-particulate defect thin glass sheets |
US10100393B2 (en) | 2013-02-21 | 2018-10-16 | Nlight, Inc. | Laser patterning of multi-layer structures |
US10464172B2 (en) | 2013-02-21 | 2019-11-05 | Nlight, Inc. | Patterning conductive films using variable focal plane to control feature size |
US9537042B2 (en) | 2013-02-21 | 2017-01-03 | Nlight, Inc. | Non-ablative laser patterning |
US9842665B2 (en) | 2013-02-21 | 2017-12-12 | Nlight, Inc. | Optimization of high resolution digitally encoded laser scanners for fine feature marking |
EP2830110A1 (de) | 2013-07-22 | 2015-01-28 | Heraeus Precious Metals GmbH & Co. KG | Strukturierung einer Zusammensetzung mit Silber-Nanodrähten |
KR20160084428A (ko) * | 2013-11-08 | 2016-07-13 | 메르크 파텐트 게엠베하 | 은 나노 재료를 포함하는 투명 전도성 기질의 구조화 방법 |
US10069271B2 (en) | 2014-06-02 | 2018-09-04 | Nlight, Inc. | Scalable high power fiber laser |
US10618131B2 (en) | 2014-06-05 | 2020-04-14 | Nlight, Inc. | Laser patterning skew correction |
KR102209680B1 (ko) * | 2014-06-27 | 2021-01-29 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
US9482477B2 (en) | 2014-07-28 | 2016-11-01 | Northrop Grumman Systems Corporation | Nano-thermal agents for enhanced interfacial thermal conductance |
US10310201B2 (en) | 2014-08-01 | 2019-06-04 | Nlight, Inc. | Back-reflection protection and monitoring in fiber and fiber-delivered lasers |
CN105374696B (zh) * | 2014-08-05 | 2018-08-28 | 上海蓝沛信泰光电科技有限公司 | 一种利用激光刻蚀制备透明金属引线结构的方法 |
KR102323848B1 (ko) * | 2014-09-30 | 2021-11-09 | 동우 화인켐 주식회사 | 은 나노 와이어의 식각액 조성물 |
KR102254561B1 (ko) * | 2014-09-30 | 2021-05-21 | 동우 화인켐 주식회사 | 은 나노 와이어의 식각액 조성물 |
US9296614B1 (en) | 2014-11-12 | 2016-03-29 | Corning Incorporated | Substrate such as for use with carbon nanotubes |
US9837783B2 (en) | 2015-01-26 | 2017-12-05 | Nlight, Inc. | High-power, single-mode fiber sources |
CN106155429A (zh) * | 2015-03-25 | 2016-11-23 | 联想(北京)有限公司 | 电子设备、触控部件及其设置方法 |
US10050404B2 (en) | 2015-03-26 | 2018-08-14 | Nlight, Inc. | Fiber source with cascaded gain stages and/or multimode delivery fiber with low splice loss |
WO2017004055A1 (en) | 2015-07-02 | 2017-01-05 | Sabic Global Technologies B.V. | Process and material for growth of adsorbed compound via nanoscale-controlled resistive heating and uses thereof |
WO2017008022A1 (en) | 2015-07-08 | 2017-01-12 | Nlight, Inc. | Fiber with depressed central index for increased beam parameter product |
CN104962919B (zh) * | 2015-07-31 | 2017-09-22 | 合肥银派科技有限公司 | 一种银纳米线的刻蚀液及刻蚀方法 |
US9447504B1 (en) * | 2015-09-28 | 2016-09-20 | Xerox Corporation | Method of etching using inkjet printing |
EP3978184A1 (de) | 2015-11-23 | 2022-04-06 | NLIGHT, Inc. | Verfahren und vorrichtung zur feinstufigen zeitsteuerung für eine laserstrahlmaterialbearbeitung |
US10074960B2 (en) | 2015-11-23 | 2018-09-11 | Nlight, Inc. | Predictive modification of laser diode drive current waveform in order to optimize optical output waveform in high power laser systems |
US11179807B2 (en) | 2015-11-23 | 2021-11-23 | Nlight, Inc. | Fine-scale temporal control for laser material processing |
WO2017127573A1 (en) | 2016-01-19 | 2017-07-27 | Nlight, Inc. | Method of processing calibration data in 3d laser scanner systems |
JP7221579B2 (ja) * | 2016-03-22 | 2023-02-14 | 富士電機株式会社 | 樹脂組成物 |
US10732439B2 (en) | 2016-09-29 | 2020-08-04 | Nlight, Inc. | Fiber-coupled device for varying beam characteristics |
EP3519871A1 (de) | 2016-09-29 | 2019-08-07 | NLIGHT, Inc. | Einstellbare strahleigenschaften |
US10730785B2 (en) | 2016-09-29 | 2020-08-04 | Nlight, Inc. | Optical fiber bending mechanisms |
CN107068412B (zh) * | 2016-12-08 | 2018-10-16 | 常州大学 | 一种高功率的长线性超级电容器及其制备方法 |
KR102611837B1 (ko) | 2017-04-04 | 2023-12-07 | 엔라이트 인크. | 검류계 스캐너 보정을 위한 광학 기준 생성 |
US10614928B2 (en) | 2017-04-17 | 2020-04-07 | Philippe Hansen-Estruch | Biodegradable flexible lightweight energy storage composite and methods of making the same |
CN109835867B (zh) * | 2017-11-24 | 2023-07-14 | 中芯国际集成电路制造(上海)有限公司 | 刻蚀溶液和刻蚀方法 |
CN109045368A (zh) * | 2018-07-04 | 2018-12-21 | 郑州大学第附属医院 | 一种医用高强度高韧性可吸收复合生物材料 |
CN110444632A (zh) * | 2019-07-08 | 2019-11-12 | 绵阳金能移动能源有限公司 | 一种采用石墨烯导电膜制备柔性太阳电池前电极的方法 |
WO2021050791A1 (en) * | 2019-09-10 | 2021-03-18 | Washington University | Compositions of conductive polymers and methods for making and using same |
CN112185608B (zh) * | 2020-10-28 | 2021-11-30 | 碳星科技(天津)有限公司 | 一种新型双层导电网络结构的柔性透明电极及其制备方法 |
CN114517094B (zh) * | 2020-11-20 | 2023-08-22 | 苏州阿特斯阳光电力科技有限公司 | 一种丝网印刷电化学刻蚀用浆料及其制备方法和应用 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1378947A1 (de) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Ätzpaste für Halbleiter und Verwendung einer Ätzpaste zum lokalisierten Ätzen von Halbleitersubstraten |
US8018568B2 (en) * | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
CN102324462B (zh) * | 2006-10-12 | 2015-07-01 | 凯博瑞奥斯技术公司 | 基于纳米线的透明导体及其应用 |
DE102006051952A1 (de) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
JP2008159923A (ja) * | 2006-12-25 | 2008-07-10 | Sharp Corp | 有機薄膜トランジスタ製造用蒸着用マスク、これを用いた有機薄膜トランジスタの製造方法、有機薄膜トランジスタ |
TWI374859B (en) * | 2008-05-28 | 2012-10-21 | Ind Tech Res Inst | Photo energy transformation catalysts and methods for fabricating the same |
WO2010022849A2 (de) * | 2008-09-01 | 2010-03-04 | Merck Patent Gmbh | Randentschichtung von dünnschicht-solar-modulen mittels ätzen |
WO2010093779A1 (en) * | 2009-02-12 | 2010-08-19 | Optera, Inc. | Plastic capacitive touch screen and method of manufacturing same |
JP4998619B2 (ja) | 2009-03-30 | 2012-08-15 | 東レ株式会社 | 導電膜除去剤および導電膜除去方法 |
MY161189A (en) * | 2009-09-18 | 2017-04-14 | Merck Patent Gmbh | Ink jet printable etching inks and associated process |
WO2011119707A2 (en) * | 2010-03-23 | 2011-09-29 | Cambrios Technologies Corporation | Etch patterning of nanostructure transparent conductors |
EP2572388B1 (de) | 2010-05-21 | 2015-01-07 | Merck Patent GmbH | Selektives ätzen einer kohlenstoffnanoröhrchen-polymermatrix auf einer kunststoffunterstruktur |
US20120291836A1 (en) * | 2010-11-17 | 2012-11-22 | E.I. Du Pont De Nemours And Company | Array of thin-film photovoltaic cells having an etchant-resistant electrode an an integrated bypass diode associated with a plurality of cells and a panel incorporating the same |
WO2012083082A1 (en) * | 2010-12-15 | 2012-06-21 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
-
2011
- 2011-10-27 EP EP11008621.2A patent/EP2587564A1/de not_active Withdrawn
-
2012
- 2012-09-28 CN CN201280052467.XA patent/CN103907216A/zh active Pending
- 2012-09-28 BR BR112014009871A patent/BR112014009871A2/pt not_active IP Right Cessation
- 2012-09-28 IN IN1122KON2014 patent/IN2014KN01122A/en unknown
- 2012-09-28 KR KR1020147014157A patent/KR20140085563A/ko not_active Application Discontinuation
- 2012-09-28 WO PCT/EP2012/004095 patent/WO2013060409A1/en active Application Filing
- 2012-09-28 JP JP2014537509A patent/JP2015501541A/ja not_active Ceased
- 2012-09-28 SG SG11201401650UA patent/SG11201401650UA/en unknown
- 2012-09-28 EP EP12766899.4A patent/EP2771919A1/de not_active Withdrawn
- 2012-09-28 US US14/354,743 patent/US9379326B2/en not_active Expired - Fee Related
- 2012-10-26 TW TW101139804A patent/TWI561459B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20140291287A1 (en) | 2014-10-02 |
CN103907216A (zh) | 2014-07-02 |
TW201323319A (zh) | 2013-06-16 |
TWI561459B (en) | 2016-12-11 |
WO2013060409A1 (en) | 2013-05-02 |
EP2771919A1 (de) | 2014-09-03 |
EP2587564A1 (de) | 2013-05-01 |
KR20140085563A (ko) | 2014-07-07 |
SG11201401650UA (en) | 2014-05-29 |
BR112014009871A2 (pt) | 2017-04-18 |
JP2015501541A (ja) | 2015-01-15 |
US9379326B2 (en) | 2016-06-28 |
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