IN2014DN09214A - - Google Patents
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- Publication number
- IN2014DN09214A IN2014DN09214A IN9214DEN2014A IN2014DN09214A IN 2014DN09214 A IN2014DN09214 A IN 2014DN09214A IN 9214DEN2014 A IN9214DEN2014 A IN 9214DEN2014A IN 2014DN09214 A IN2014DN09214 A IN 2014DN09214A
- Authority
- IN
- India
- Prior art keywords
- ald
- cartridge
- reactor
- particles
- properties
- Prior art date
Links
- 238000000231 atomic layer deposition Methods 0.000 abstract 9
- 238000000034 method Methods 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 239000011236 particulate material Substances 0.000 abstract 1
- 238000009738 saturating Methods 0.000 abstract 1
- 238000006557 surface reaction Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2012/050462 WO2013171360A1 (fr) | 2012-05-14 | 2012-05-14 | Enrobage de particules d'une poudre à l'aide d'une cartouche de dépôt de couches atomiques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DN09214A true IN2014DN09214A (fr) | 2015-07-10 |
Family
ID=49583194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN9214DEN2014 IN2014DN09214A (fr) | 2012-05-14 | 2012-05-14 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20150125599A1 (fr) |
| EP (1) | EP2850222A4 (fr) |
| JP (1) | JP5963948B2 (fr) |
| KR (1) | KR20150013296A (fr) |
| CN (1) | CN104284998A (fr) |
| IN (1) | IN2014DN09214A (fr) |
| RU (1) | RU2600042C2 (fr) |
| SG (1) | SG11201406817XA (fr) |
| TW (1) | TW201346057A (fr) |
| WO (1) | WO2013171360A1 (fr) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11326255B2 (en) * | 2013-02-07 | 2022-05-10 | Uchicago Argonne, Llc | ALD reactor for coating porous substrates |
| US11142683B2 (en) | 2014-09-17 | 2021-10-12 | Koninklijke Philips N.V. | Phosphor with hybrid coating and method of production |
| FI126863B (en) | 2016-06-23 | 2017-06-30 | Beneq Oy | Apparatus for treating particulate matter |
| CN109689929B (zh) | 2016-09-16 | 2022-09-30 | 皮考逊公司 | 通过原子层沉积(ald)进行颗粒涂覆 |
| US10886437B2 (en) | 2016-11-03 | 2021-01-05 | Lumileds Llc | Devices and structures bonded by inorganic coating |
| KR101868703B1 (ko) * | 2016-12-14 | 2018-06-18 | 서울과학기술대학교 산학협력단 | 분말 코팅 반응기 |
| US11133503B2 (en) * | 2017-01-23 | 2021-09-28 | Basf Corporation | Process for making cathode materials, and reactor suitable for carrying out said process |
| KR102534238B1 (ko) | 2017-08-24 | 2023-05-19 | 포지 나노, 인크. | 분말의 합성, 기능화, 표면 처리 및/또는 캡슐화를 위한 제조 공정, 및 그의 응용 |
| CN107502873B (zh) * | 2017-09-30 | 2019-02-15 | 华中科技大学无锡研究院 | 一种粉末包覆原子层沉积装置 |
| US11174552B2 (en) | 2018-06-12 | 2021-11-16 | Applied Materials, Inc. | Rotary reactor for uniform particle coating with thin films |
| CN108715998B (zh) * | 2018-06-14 | 2019-08-13 | 华中科技大学 | 一种用于大批量微纳米颗粒包裹的原子层沉积装置 |
| JP7141014B2 (ja) * | 2018-06-29 | 2022-09-22 | 住友金属鉱山株式会社 | 原子層堆積装置とこの装置を用いた被覆膜形成粒子の製造方法 |
| US11242599B2 (en) * | 2018-07-19 | 2022-02-08 | Applied Materials, Inc. | Particle coating methods and apparatus |
| KR102174708B1 (ko) * | 2018-10-02 | 2020-11-05 | (주)아이작리서치 | 파우더용 플라즈마 원자층 증착 장치 |
| KR102318812B1 (ko) * | 2018-10-05 | 2021-10-29 | (주)아이작리서치 | 파우더용 원자층 증착 장치 |
| KR102173461B1 (ko) * | 2018-10-05 | 2020-11-03 | (주)아이작리서치 | 파우더용 원자층 증착 장치 |
| KR102232833B1 (ko) * | 2018-10-11 | 2021-03-25 | 부산대학교 산학협력단 | 저밀도 글라스 버블 미세 입자의 기능성 코팅을 위한 원자층 증착기 및 이를 이용한 코팅방법 |
| KR20200095082A (ko) * | 2019-01-31 | 2020-08-10 | 주식회사 엘지화학 | 원자층 증착 장치 |
| KR102219583B1 (ko) * | 2019-02-12 | 2021-02-24 | (주)아이작리서치 | 파우더 원자층 증착 장치 |
| KR102372770B1 (ko) * | 2019-02-28 | 2022-03-11 | 주식회사 엘아이비에너지 | 분말 입자 형태의 소재에 박막층을 증착하는데 이용되는 화학적 증기기상 증착장비 |
| TWI732532B (zh) | 2019-04-24 | 2021-07-01 | 美商應用材料股份有限公司 | 用於在具有旋轉槳的固定的腔室中塗覆顆粒的反應器 |
| TWI844842B (zh) | 2019-04-24 | 2024-06-11 | 美商應用材料股份有限公司 | 具有旋轉葉片與氣體注入之用於在固定腔室中塗覆粒子的反應器 |
| JP6787621B1 (ja) * | 2019-05-24 | 2020-11-18 | 株式会社クリエイティブコーティングス | 粉体の成膜方法、粉体成膜用容器及びａｌｄ装置 |
| WO2020240893A1 (fr) * | 2019-05-24 | 2020-12-03 | 株式会社クリエイティブコーティングス | Procédé de formation d'un film de revêtement sur poudre, récipient destiné à être utilisé dans la formation d'un film de revêtement sur poudre, et dispositif de dépôt de couche atomique (ald) |
| CN110055513B (zh) * | 2019-06-10 | 2021-01-15 | 南开大学 | 一种粉末原子层沉积设备及其沉积方法与应用 |
| GB2585077A (en) * | 2019-06-28 | 2020-12-30 | Nanexa Ab | Apparatus |
| US10844483B1 (en) | 2019-12-16 | 2020-11-24 | Quantum Elements Development, Inc. | Quantum printing methods |
| US11111578B1 (en) | 2020-02-13 | 2021-09-07 | Uchicago Argonne, Llc | Atomic layer deposition of fluoride thin films |
| KR102429257B1 (ko) * | 2020-02-19 | 2022-08-05 | (주)아이작리서치 | 파우더용 원자층 증착 설비 |
| KR102409310B1 (ko) * | 2020-05-19 | 2022-06-16 | (주)아이작리서치 | 파우더용 원자층 증착 설비 및 이의 가스 공급 방법 |
| EP4172290A1 (fr) | 2020-06-29 | 2023-05-03 | Lumileds LLC | Revêtement de particules de luminophore |
| TWI729944B (zh) * | 2020-10-06 | 2021-06-01 | 天虹科技股份有限公司 | 粉末的原子層沉積裝置 |
| TWI750836B (zh) * | 2020-10-06 | 2021-12-21 | 天虹科技股份有限公司 | 可拆式粉末原子層沉積裝置 |
| TWI772913B (zh) * | 2020-10-06 | 2022-08-01 | 天虹科技股份有限公司 | 微粒的原子層沉積裝置 |
| TWI759935B (zh) * | 2020-11-02 | 2022-04-01 | 天虹科技股份有限公司 | 可吹動粉末的原子層沉積裝置 |
| CN112442682A (zh) * | 2020-11-23 | 2021-03-05 | 江汉大学 | 一种连续粉末镀膜的生产装置与方法 |
| US11484941B2 (en) | 2020-12-15 | 2022-11-01 | Quantum Elements Development Inc. | Metal macrostructures |
| US11623871B2 (en) | 2020-12-15 | 2023-04-11 | Quantum Elements Development Inc. | Rare earth metal instantiation |
| CN117043389A (zh) | 2021-03-22 | 2023-11-10 | 默兹奔特利股份公司 | 通过原子层沉积进行颗粒涂覆 |
| WO2022239888A1 (fr) * | 2021-05-13 | 2022-11-17 | (주)아이작리서치 | Équipement de dépôt de couche atomique pour poudres |
| CN113564564B (zh) * | 2021-07-02 | 2022-10-21 | 华中科技大学 | 原子层沉积装置 |
| CN113564565B (zh) * | 2021-07-22 | 2023-12-15 | 江苏微导纳米科技股份有限公司 | 粉体镀膜装置及方法 |
| KR20230031618A (ko) * | 2021-08-27 | 2023-03-07 | (주)아이작리서치 | 파우더용 원자층 증착 장치 |
| US11952662B2 (en) * | 2021-10-18 | 2024-04-09 | Sky Tech Inc. | Powder atomic layer deposition equipment with quick release function |
| US12065738B2 (en) | 2021-10-22 | 2024-08-20 | Uchicago Argonne, Llc | Method of making thin films of sodium fluorides and their derivatives by ALD |
| US11901169B2 (en) | 2022-02-14 | 2024-02-13 | Uchicago Argonne, Llc | Barrier coatings |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
| JPH0638910B2 (ja) * | 1986-01-10 | 1994-05-25 | フロイント産業株式会社 | 粉粒体処理方法および装置 |
| US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
| DE19836013C2 (de) * | 1998-08-10 | 2002-12-19 | Weitmann & Konrad Fa | Pudervorrichtung |
| US9376750B2 (en) * | 2001-07-18 | 2016-06-28 | Regents Of The University Of Colorado, A Body Corporate | Method of depositing an inorganic film on an organic polymer |
| US20080035056A1 (en) * | 2004-04-21 | 2008-02-14 | Kazutoshi Okubo | Apparatus For Manufacturing Coated Fuel Particles For High-Temperature Gas-Cooled Reactor |
| US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
| US8993051B2 (en) * | 2007-12-12 | 2015-03-31 | Technische Universiteit Delft | Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle |
| US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
| WO2011063007A2 (fr) * | 2009-11-18 | 2011-05-26 | Rec Silicon Inc | Réacteur à lit fluidisé |
| US9284643B2 (en) * | 2010-03-23 | 2016-03-15 | Pneumaticoat Technologies Llc | Semi-continuous vapor deposition process for the manufacture of coated particles |
| US20120272892A1 (en) * | 2011-04-07 | 2012-11-01 | Veeco Instruments Inc. | Metal-Organic Vapor Phase Epitaxy System and Process |
-
2012
- 2012-05-14 CN CN201280073150.4A patent/CN104284998A/zh active Pending
- 2012-05-14 EP EP12877000.5A patent/EP2850222A4/fr not_active Withdrawn
- 2012-05-14 RU RU2014147671/02A patent/RU2600042C2/ru active
- 2012-05-14 IN IN9214DEN2014 patent/IN2014DN09214A/en unknown
- 2012-05-14 US US14/400,826 patent/US20150125599A1/en not_active Abandoned
- 2012-05-14 WO PCT/FI2012/050462 patent/WO2013171360A1/fr active Application Filing
- 2012-05-14 KR KR20147035040A patent/KR20150013296A/ko not_active Application Discontinuation
- 2012-05-14 SG SG11201406817XA patent/SG11201406817XA/en unknown
- 2012-05-14 JP JP2015512090A patent/JP5963948B2/ja active Active
-
2013
- 2013-03-26 TW TW102110654A patent/TW201346057A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2850222A4 (fr) | 2016-01-20 |
| TW201346057A (zh) | 2013-11-16 |
| RU2014147671A (ru) | 2016-07-10 |
| US20150125599A1 (en) | 2015-05-07 |
| JP2015520297A (ja) | 2015-07-16 |
| KR20150013296A (ko) | 2015-02-04 |
| WO2013171360A1 (fr) | 2013-11-21 |
| JP5963948B2 (ja) | 2016-08-03 |
| SG11201406817XA (en) | 2014-12-30 |
| EP2850222A1 (fr) | 2015-03-25 |
| CN104284998A (zh) | 2015-01-14 |
| RU2600042C2 (ru) | 2016-10-20 |
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