IN2012DN02314A - - Google Patents

Download PDF

Info

Publication number
IN2012DN02314A
IN2012DN02314A IN2314DEN2012A IN2012DN02314A IN 2012DN02314 A IN2012DN02314 A IN 2012DN02314A IN 2314DEN2012 A IN2314DEN2012 A IN 2314DEN2012A IN 2012DN02314 A IN2012DN02314 A IN 2012DN02314A
Authority
IN
India
Prior art keywords
thin film
baking
thickness
dielectric thin
carried out
Prior art date
Application number
Other languages
English (en)
Inventor
Hideaki Sakurai
Toshiaki Watanabe
Nobuyuki Soyama
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2012DN02314A publication Critical patent/IN2012DN02314A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/624—Sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C01G23/006—Alkaline earth titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4686—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on phases other than BaTiO3 perovskite phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562—Heating rate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Dispersion Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
IN2314DEN2012 2009-09-02 2010-09-02 IN2012DN02314A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009202474 2009-09-02
PCT/JP2010/065059 WO2011027833A1 (ja) 2009-09-02 2010-09-02 誘電体薄膜の形成方法及び該誘電体薄膜を有する薄膜キャパシタ

Publications (1)

Publication Number Publication Date
IN2012DN02314A true IN2012DN02314A (enrdf_load_stackoverflow) 2015-08-21

Family

ID=43649367

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2314DEN2012 IN2012DN02314A (enrdf_load_stackoverflow) 2009-09-02 2010-09-02

Country Status (7)

Country Link
US (1) US8891227B2 (enrdf_load_stackoverflow)
EP (1) EP2474505B1 (enrdf_load_stackoverflow)
JP (1) JP5617441B2 (enrdf_load_stackoverflow)
KR (1) KR101759361B1 (enrdf_load_stackoverflow)
CN (1) CN102482115A (enrdf_load_stackoverflow)
IN (1) IN2012DN02314A (enrdf_load_stackoverflow)
WO (1) WO2011027833A1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452186B1 (ko) * 2012-12-26 2014-10-21 주식회사 누리비스타 내부 전극용 페이스트 및 이를 이용하여 제조된 적층형 세라믹 전자 부품
JP2014144881A (ja) * 2013-01-28 2014-08-14 Mitsubishi Materials Corp 誘電体薄膜形成用組成物及びこの組成物を用いた誘電体薄膜の形成方法
CN105006362B (zh) * 2015-07-28 2018-06-19 桂林电子科技大学 一种可剥离衬底的薄膜电容器制备方法
JP6665673B2 (ja) * 2016-05-12 2020-03-13 三菱マテリアル株式会社 強誘電体薄膜の製造方法
KR101813374B1 (ko) * 2016-05-13 2017-12-28 삼성전기주식회사 박막 커패시터 및 그 제조방법
US10479732B2 (en) * 2017-03-31 2019-11-19 Tdk Corporation Oxynitride thin film and capacitance element
HRP20231014T1 (hr) * 2018-07-30 2023-12-08 Digital Concepts Company Limited Upravljivi kondenzator i postupak njegovog upravljanja i proizvodnje

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236404A (ja) 1984-05-10 1985-11-25 日本曹達株式会社 薄膜強誘電体の製造方法
JPH01308801A (ja) * 1988-06-08 1989-12-13 Murata Mfg Co Ltd 誘電体薄膜の製造方法
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US6174564B1 (en) * 1991-12-13 2001-01-16 Symetrix Corporation Method of making metal polyoxyalkylated precursor solutions
JP3007795B2 (ja) * 1994-06-16 2000-02-07 シャープ株式会社 複合金属酸化物誘電体薄膜の製造方法
JP3446461B2 (ja) * 1995-06-09 2003-09-16 三菱マテリアル株式会社 Ｂａ１−ｘＳｒｘＴｉｙＯ３薄膜形成用組成物、Ｂａ１−ｘＳｒｘＴｉｙＯ３薄膜の形成方法及び薄膜コンデンサの製造方法
JP3178303B2 (ja) * 1995-06-23 2001-06-18 三菱マテリアル株式会社 Ｂａ１−ｘＳｒｘＴｉｙＯ３薄膜形成用組成物及びＢａ１−ｘＳｒｘＴｉｙＯ３薄膜の形成方法
KR100406665B1 (ko) * 1995-06-09 2004-03-26 미쓰비시 마테리알 가부시키가이샤 Ba1-xSrxTiyO3 박막 형성용 조성물 및 Ba1-xSrxTiyO3 박막의 형성방법
JPH0978249A (ja) * 1995-09-14 1997-03-25 Fujitsu Ltd 誘電体薄膜の作製方法
CN1049644C (zh) * 1997-03-21 2000-02-23 中国科学院上海硅酸盐研究所 用水为溶剂的前驱物溶液制备钛酸锶钡薄膜的方法
JP3599558B2 (ja) * 1998-03-10 2004-12-08 シャープ株式会社 高周波用容量可変素子の製造方法及び高周波用容量可変素子
JP4048650B2 (ja) * 1999-06-07 2008-02-20 三菱マテリアル株式会社 ペロブスカイト型酸化物薄膜形成用原料溶液
US6803134B1 (en) * 2002-05-31 2004-10-12 The United States Of America As Represented By The Secretary Of The Army Paraelectric thin film material and method statement of government interest
US20080171176A1 (en) * 2004-03-15 2008-07-17 Energenius, Inc. Thin Film Ferroelectric Microwave Components and Devices on Flexible Metal Foil Substrates
JP3958343B2 (ja) 2005-04-28 2007-08-15 三井金属鉱業株式会社 酸化物誘電層の形成方法及びその形成方法で得られた酸化物誘電層を備えたキャパシタ層形成材
TW200644003A (en) * 2005-04-28 2006-12-16 Mitsui Mining & Smelting Co Method for oxide dielectric layer formation, and capacitor layer forming material comprising oxide dielectric layer formed by said formation method
JP2007019432A (ja) * 2005-07-11 2007-01-25 Tokyo Ohka Kogyo Co Ltd 常誘電体薄膜およびその形成方法
JP4907266B2 (ja) * 2006-08-25 2012-03-28 太陽誘電株式会社 チューナブルキャパシタ
JP2009202474A (ja) 2008-02-28 2009-09-10 Toshiba Tec Corp インクジェット記録装置

Also Published As

Publication number Publication date
CN102482115A (zh) 2012-05-30
KR101759361B1 (ko) 2017-07-18
JP2011073960A (ja) 2011-04-14
US8891227B2 (en) 2014-11-18
EP2474505B1 (en) 2016-07-27
JP5617441B2 (ja) 2014-11-05
EP2474505A1 (en) 2012-07-11
WO2011027833A1 (ja) 2011-03-10
EP2474505A4 (en) 2013-03-20
US20120224297A1 (en) 2012-09-06
KR20120059596A (ko) 2012-06-08

Similar Documents

Publication Publication Date Title
IN2012DN02314A (enrdf_load_stackoverflow)
MX392387B (es) Proceso para formar un producto de pelicula formado
MX2010004294A (es) Composiciones novedosas y metodos, recubrimientos y articulos relacionados.
WO2015057552A3 (en) Ion exchange process and chemically strengthened glass substrates resulting therefrom
WO2007084558A3 (en) Method of producing particles by physical vapor deposition in an ionic liquid
WO2014124178A3 (en) Coating and curing apparatus and methods
TN2011000458A1 (en) Thin film coating and method of making of making the same
WO2010077067A3 (ko) 금속박막의 제조방법
WO2010023853A3 (ja) 薄膜付きガラス基板の製造方法
WO2011065796A3 (ko) 안티 글레어 글래스 제조 방법
WO2012064050A3 (ko) 화학적 리프트 오프 방법을 이용한 iii족 질화물 기판의 제조방법
WO2014085315A3 (en) Method for forming a barrier layer
WO2010111311A3 (en) New dielectric oxide films and method for making same
WO2011027115A3 (en) Trans parent electrically conducting oxides
EP2647039A4 (en) Coating liquid for forming metal oxide thin film, metal oxide thin film, field effect transistor, and method for producing the field effect transistor
WO2018008985A3 (ko) 세포시트 제작방법 및 응용을 위한 고분자 박막 배양플레이트 제작방법 및 용도
JP2012091353A5 (enrdf_load_stackoverflow)
CN105874545A (zh) 透明导电膜的制造方法
GB201106553D0 (en) Mthod for coating substrates
WO2008096871A1 (ja) 光触媒薄膜、光触媒薄膜の形成方法及び光触媒薄膜被覆製品
TW200739619A (en) Azo transparent conducting film with metallic nano particles and method of producing thereof
PH12012502133A1 (en) Instant noodles and method of producing the same
WO2011107094A3 (de) Solarzelle mit dielektrischer rückseitenverspiegelung und verfahren zu deren herstellung
WO2013057065A3 (de) Keramisches erzeugnis zur verwendung als target
WO2010142847A3 (en) Method and apparatus for coating glass substrate