WO2011107094A3 - Solarzelle mit dielektrischer rückseitenverspiegelung und verfahren zu deren herstellung - Google Patents

Solarzelle mit dielektrischer rückseitenverspiegelung und verfahren zu deren herstellung Download PDF

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Publication number
WO2011107094A3
WO2011107094A3 PCT/DE2011/075036 DE2011075036W WO2011107094A3 WO 2011107094 A3 WO2011107094 A3 WO 2011107094A3 DE 2011075036 W DE2011075036 W DE 2011075036W WO 2011107094 A3 WO2011107094 A3 WO 2011107094A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
production
reflective coating
back reflective
dielectric back
Prior art date
Application number
PCT/DE2011/075036
Other languages
English (en)
French (fr)
Other versions
WO2011107094A2 (de
Inventor
Adolf MÜNZER
Andreas Teppe
Jan Schöne
Reinhold Schlosser
Steffen Keller
Original Assignee
Centrotherm Photovoltaics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics Ag filed Critical Centrotherm Photovoltaics Ag
Priority to KR1020127025817A priority Critical patent/KR101830775B1/ko
Priority to CN201180022058.0A priority patent/CN102947954B/zh
Priority to EP11711263A priority patent/EP2543080A2/de
Priority to US13/582,502 priority patent/US9276155B2/en
Publication of WO2011107094A2 publication Critical patent/WO2011107094A2/de
Publication of WO2011107094A3 publication Critical patent/WO2011107094A3/de
Priority to US15/000,538 priority patent/US20160133774A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

Verfahren zur Herstellung einer Solarzelle (70), bei welchem auf eine Rückseite eines Solarzellensubstrats (72) ein Schichtstapel (74, 76) dielektrischer Schichten (74, 76) aufgebracht wird (14, 16; 54, 56), der Schichtstapel (74, 75) erhitzt und während eines Zeitraums von wenigstens 5 Minuten auf Temperaturen von mindestens 700°C gehalten wird (20) sowie Solarzelle (70).
PCT/DE2011/075036 2010-03-03 2011-03-03 Solarzelle mit dielektrischer rückseitenverspiegelung und verfahren zu deren herstellung WO2011107094A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020127025817A KR101830775B1 (ko) 2010-03-03 2011-03-03 유전체의 후면 반사코팅을 가진 태양전지 및 그 생산 방법
CN201180022058.0A CN102947954B (zh) 2010-03-03 2011-03-03 带有介电背反射覆层的太阳能电池及其制造方法
EP11711263A EP2543080A2 (de) 2010-03-03 2011-03-03 Solarzelle mit dielektrischer rückseitenverspiegelung und verfahren zu deren herstellung
US13/582,502 US9276155B2 (en) 2010-03-03 2011-03-03 Solar cell having dielectric back reflective coating and method for the production thereof
US15/000,538 US20160133774A1 (en) 2010-03-03 2016-01-19 Solar cell with dielectric back reflective coating

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102010010221 2010-03-03
DE102010010221.0 2010-03-03
DE102010010561 2010-03-05
DE102010010561.9 2010-03-05
DE102010025983.7 2010-07-02
DE102010025983A DE102010025983A1 (de) 2010-03-03 2010-07-02 Solarzelle mit dielektrischer Rückseitenverspiegelung und Verfahren zu deren Herstellung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US201213582502A Continuation 2010-03-03 2012-10-01

Publications (2)

Publication Number Publication Date
WO2011107094A2 WO2011107094A2 (de) 2011-09-09
WO2011107094A3 true WO2011107094A3 (de) 2012-03-15

Family

ID=44503057

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/075036 WO2011107094A2 (de) 2010-03-03 2011-03-03 Solarzelle mit dielektrischer rückseitenverspiegelung und verfahren zu deren herstellung

Country Status (6)

Country Link
US (2) US9276155B2 (de)
EP (1) EP2543080A2 (de)
KR (1) KR101830775B1 (de)
CN (1) CN102947954B (de)
DE (1) DE102010025983A1 (de)
WO (1) WO2011107094A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010048437B4 (de) 2010-10-15 2014-06-05 Centrotherm Photovoltaics Ag Solarzelle mit dielektrischer Rückseitenbeschichtung und Verfahren zu deren Herstellung
DE102013016331A1 (de) * 2013-10-05 2015-04-09 Micronas Gmbh Schichtsystem
DE102014105358A1 (de) * 2014-04-15 2015-10-15 Solarworld Innovations Gmbh Solarzelle und Verfahren zum Herstellen einer Solarzelle
CN110854241A (zh) * 2019-12-13 2020-02-28 浙江晶科能源有限公司 一种表面选择性织构太阳能电池的制造方法及太阳能电池
GB202020727D0 (en) * 2020-12-30 2021-02-10 Rec Solar Pte Ltd Solar cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
DE102006046726A1 (de) * 2006-10-02 2008-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung
DE102007041392A1 (de) * 2007-08-31 2009-03-05 Q-Cells Ag Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht
WO2009071561A2 (en) * 2007-12-03 2009-06-11 Interuniversitair Microelektronica Centrum Vzw Photovoltaic cells having metal wrap through and improved passivation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3459947B2 (ja) * 1996-06-18 2003-10-27 シャープ株式会社 太陽電池の製造方法
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7507629B2 (en) * 2004-09-10 2009-03-24 Gerald Lucovsky Semiconductor devices having an interfacial dielectric layer and related methods
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
WO2008065918A1 (fr) * 2006-12-01 2008-06-05 Sharp Kabushiki Kaisha Cellule solaire et son procédé de fabrication
JP5226255B2 (ja) 2007-07-13 2013-07-03 シャープ株式会社 太陽電池の製造方法
US8796066B2 (en) * 2008-11-07 2014-08-05 Sunpreme, Inc. Low-cost solar cells and methods for fabricating low cost substrates for solar cells
US8404970B2 (en) * 2009-05-01 2013-03-26 Silicor Materials Inc. Bifacial solar cells with back surface doping

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
DE102006046726A1 (de) * 2006-10-02 2008-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung
DE102007041392A1 (de) * 2007-08-31 2009-03-05 Q-Cells Ag Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht
WO2009071561A2 (en) * 2007-12-03 2009-06-11 Interuniversitair Microelektronica Centrum Vzw Photovoltaic cells having metal wrap through and improved passivation

Also Published As

Publication number Publication date
KR101830775B1 (ko) 2018-02-21
US20160133774A1 (en) 2016-05-12
EP2543080A2 (de) 2013-01-09
WO2011107094A2 (de) 2011-09-09
CN102947954B (zh) 2016-11-09
DE102010025983A1 (de) 2011-09-08
US9276155B2 (en) 2016-03-01
KR20130059320A (ko) 2013-06-05
US20130061924A1 (en) 2013-03-14
CN102947954A (zh) 2013-02-27

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