IN2012DN01227A - - Google Patents

Info

Publication number
IN2012DN01227A
IN2012DN01227A IN1227DEN2012A IN2012DN01227A IN 2012DN01227 A IN2012DN01227 A IN 2012DN01227A IN 1227DEN2012 A IN1227DEN2012 A IN 1227DEN2012A IN 2012DN01227 A IN2012DN01227 A IN 2012DN01227A
Authority
IN
India
Prior art keywords
oxide layer
tin oxide
solar cell
transparent conductive
silicon oxide
Prior art date
Application number
Other languages
English (en)
Inventor
Matsui Yuji
Minami Kenichi
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of IN2012DN01227A publication Critical patent/IN2012DN01227A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
IN1227DEN2012 2009-07-30 2010-07-29 IN2012DN01227A (OSRAM)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009177702 2009-07-30
JP2010154101 2010-07-06
PCT/JP2010/062850 WO2011013775A1 (ja) 2009-07-30 2010-07-29 太陽電池用透明導電性基板および太陽電池

Publications (1)

Publication Number Publication Date
IN2012DN01227A true IN2012DN01227A (OSRAM) 2015-04-10

Family

ID=43529427

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1227DEN2012 IN2012DN01227A (OSRAM) 2009-07-30 2010-07-29

Country Status (8)

Country Link
US (1) US20120125432A1 (OSRAM)
EP (1) EP2461373A1 (OSRAM)
JP (1) JPWO2011013775A1 (OSRAM)
KR (1) KR20120037952A (OSRAM)
CN (1) CN102473745A (OSRAM)
IN (1) IN2012DN01227A (OSRAM)
TW (1) TW201117391A (OSRAM)
WO (1) WO2011013775A1 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182161A (ja) * 2011-02-28 2012-09-20 Ulvac Japan Ltd 薄膜太陽電池、及び薄膜太陽電池の製造方法
WO2012169602A1 (ja) * 2011-06-08 2012-12-13 旭硝子株式会社 透明導電膜付き基板
US10964811B2 (en) 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US11417730B2 (en) 2019-08-09 2022-08-16 Micron Technology, Inc. Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions
JPWO2021131113A1 (OSRAM) * 2019-12-24 2021-07-01
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors
CN114334911B (zh) * 2022-03-03 2022-08-05 晶科能源(海宁)有限公司 光伏电池及其形成方法、光伏组件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4460108B2 (ja) 1999-05-18 2010-05-12 日本板硝子株式会社 光電変換装置用基板の製造方法
JP2002260448A (ja) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP5068946B2 (ja) 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
WO2005027229A1 (ja) * 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法
EP1950813A4 (en) 2005-11-17 2010-07-21 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR CELL AND MANUFACTURING METHOD THEREFOR
JP2009177702A (ja) 2008-01-28 2009-08-06 Nec Corp 情報通信システム、端末、アクセス装置、加入者情報収容装置、サービスプロファイル送信方法及びプログラム
JP2010154101A (ja) 2008-12-24 2010-07-08 Olympus Imaging Corp 撮像装置および撮像装置用プログラム

Also Published As

Publication number Publication date
TW201117391A (en) 2011-05-16
KR20120037952A (ko) 2012-04-20
WO2011013775A1 (ja) 2011-02-03
CN102473745A (zh) 2012-05-23
JPWO2011013775A1 (ja) 2013-01-10
US20120125432A1 (en) 2012-05-24
EP2461373A1 (en) 2012-06-06

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