IN2012DN00357A - - Google Patents
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- Publication number
- IN2012DN00357A IN2012DN00357A IN357DEN2012A IN2012DN00357A IN 2012DN00357 A IN2012DN00357 A IN 2012DN00357A IN 357DEN2012 A IN357DEN2012 A IN 357DEN2012A IN 2012DN00357 A IN2012DN00357 A IN 2012DN00357A
- Authority
- IN
- India
- Prior art keywords
- layer
- depositing
- zinc
- cadmium sulfide
- cadmium
- Prior art date
Links
- 238000000151 deposition Methods 0.000 abstract 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22465809P | 2009-07-10 | 2009-07-10 | |
| US22501309P | 2009-07-13 | 2009-07-13 | |
| PCT/US2010/041500 WO2011006050A1 (en) | 2009-07-10 | 2010-07-09 | Photovoltaic devices including zinc |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN00357A true IN2012DN00357A (enrdf_load_stackoverflow) | 2015-08-21 |
Family
ID=43426538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN357DEN2012 IN2012DN00357A (enrdf_load_stackoverflow) | 2009-07-10 | 2010-07-09 |
Country Status (12)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011084775A1 (en) * | 2009-12-21 | 2011-07-14 | First Solar, Inc. | Photovoltaic device with buffer layer |
| CN103250257A (zh) * | 2010-09-22 | 2013-08-14 | 第一太阳能有限公司 | 用于太阳能电池的CdZnO或SnZnO缓冲层 |
| CN105914241B (zh) | 2010-09-22 | 2018-07-24 | 第一太阳能有限公司 | 光伏装置和形成光伏装置的方法 |
| US8247686B2 (en) | 2011-05-31 | 2012-08-21 | Primestar Solar, Inc. | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| US8188562B2 (en) * | 2011-05-31 | 2012-05-29 | Primestar Solar, Inc. | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| US8241930B2 (en) | 2011-05-31 | 2012-08-14 | Primestar Solar, Inc. | Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device |
| US10026861B2 (en) * | 2011-10-17 | 2018-07-17 | First Solar, Inc. | Photovoltaic device and method of formation |
| WO2013074306A1 (en) | 2011-11-18 | 2013-05-23 | First Solar, Inc. | Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules |
| US9054245B2 (en) | 2012-03-02 | 2015-06-09 | First Solar, Inc. | Doping an absorber layer of a photovoltaic device via diffusion from a window layer |
| US9698285B2 (en) | 2013-02-01 | 2017-07-04 | First Solar, Inc. | Photovoltaic device including a P-N junction and method of manufacturing |
| WO2014123806A2 (en) * | 2013-02-07 | 2014-08-14 | First Solar, Inc. | Photovoltaic device with protective layer over a window layer and method of manufacture of the same |
| US11876140B2 (en) | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
| US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
| US9406829B2 (en) | 2013-06-28 | 2016-08-02 | First Solar, Inc. | Method of manufacturing a photovoltaic device |
| US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
| KR101779770B1 (ko) * | 2016-03-04 | 2017-09-19 | 주식회사 아바코 | 태양 전지 및 이의 제조 방법 |
| CN105845759A (zh) * | 2016-04-15 | 2016-08-10 | 武汉锦隆工程技术有限公司 | 一种太阳能电池及带防撞报警功能的太阳能路障 |
| WO2018013641A1 (en) * | 2016-07-14 | 2018-01-18 | First Solar, Inc. | Solar cells and methods of making the same |
| CN107768451A (zh) * | 2017-08-31 | 2018-03-06 | 成都中建材光电材料有限公司 | 一种具有锡酸锌镁层的碲化镉太阳电池结构及其制备方法 |
| CN113261116B (zh) * | 2018-10-24 | 2024-10-11 | 第一阳光公司 | 具有v族掺杂的光伏器件用缓冲层 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
| JPS62203384A (ja) * | 1986-03-03 | 1987-09-08 | Matsushita Electric Ind Co Ltd | 光起電力装置およびその製造方法 |
| US4753684A (en) * | 1986-10-31 | 1988-06-28 | The Standard Oil Company | Photovoltaic heterojunction structures |
| JPH01179743A (ja) * | 1988-01-08 | 1989-07-17 | Matsushita Electric Ind Co Ltd | ＣｄＳ焼結膜の製造方法 |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| JPH06350116A (ja) * | 1993-06-04 | 1994-12-22 | Matsushita Electric Ind Co Ltd | 太陽電池 |
| JP3497249B2 (ja) * | 1994-09-16 | 2004-02-16 | 松下電池工業株式会社 | 太陽電池の製造法 |
| US5916375A (en) * | 1995-12-07 | 1999-06-29 | Japan Energy Corporation | Method of producing photoelectric conversion device |
| US5972732A (en) * | 1997-12-19 | 1999-10-26 | Sandia Corporation | Method of monolithic module assembly |
| US6037241A (en) * | 1998-02-19 | 2000-03-14 | First Solar, Llc | Apparatus and method for depositing a semiconductor material |
| US5945163A (en) * | 1998-02-19 | 1999-08-31 | First Solar, Llc | Apparatus and method for depositing a material on a substrate |
| ATE374263T1 (de) * | 1999-03-29 | 2007-10-15 | Antec Solar Energy Ag | Vorrichtung und verfahren zur beschichtung von substraten durch aufdampfen mittels eines pvd- verfahrens |
| JP2001223376A (ja) * | 2000-02-10 | 2001-08-17 | Midwest Research Inst | 多結晶半導体薄膜太陽電池の製造方法およびその方法で製造された太陽電池 |
| US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
| US20080302418A1 (en) * | 2006-03-18 | 2008-12-11 | Benyamin Buller | Elongated Photovoltaic Devices in Casings |
| US9017480B2 (en) * | 2006-04-06 | 2015-04-28 | First Solar, Inc. | System and method for transport |
| US8076571B2 (en) * | 2006-11-02 | 2011-12-13 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20090102502A1 (en) * | 2007-10-22 | 2009-04-23 | Michel Ranjit Frei | Process testers and testing methodology for thin-film photovoltaic devices |
-
2010
- 2010-07-09 IN IN357DEN2012 patent/IN2012DN00357A/en unknown
- 2010-07-09 TW TW099122686A patent/TW201108452A/zh unknown
- 2010-07-09 CN CN2010800404700A patent/CN102484170A/zh active Pending
- 2010-07-09 AU AU2010271339A patent/AU2010271339A1/en not_active Abandoned
- 2010-07-09 EP EP10797901A patent/EP2452370A4/en not_active Withdrawn
- 2010-07-09 WO PCT/US2010/041500 patent/WO2011006050A1/en active Application Filing
- 2010-07-09 JP JP2012519755A patent/JP2012533178A/ja active Pending
- 2010-07-09 MA MA34599A patent/MA33504B1/fr unknown
- 2010-07-09 KR KR1020127003509A patent/KR20120052296A/ko not_active Ceased
- 2010-07-10 US US12/833,960 patent/US20110005594A1/en not_active Abandoned
-
2012
- 2012-01-10 IL IL217463A patent/IL217463A0/en unknown
- 2012-01-17 ZA ZA2012/00354A patent/ZA201200354B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2452370A4 (en) | 2013-01-02 |
| KR20120052296A (ko) | 2012-05-23 |
| MA33504B1 (fr) | 2012-08-01 |
| ZA201200354B (en) | 2012-09-26 |
| AU2010271339A1 (en) | 2012-02-16 |
| US20110005594A1 (en) | 2011-01-13 |
| TW201108452A (en) | 2011-03-01 |
| WO2011006050A1 (en) | 2011-01-13 |
| EP2452370A1 (en) | 2012-05-16 |
| IL217463A0 (en) | 2012-02-29 |
| CN102484170A (zh) | 2012-05-30 |
| JP2012533178A (ja) | 2012-12-20 |
| AU2010271339A2 (en) | 2012-02-16 |
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