IN191121B - - Google Patents

Info

Publication number
IN191121B
IN191121B IN229CA1997A IN191121B IN 191121 B IN191121 B IN 191121B IN 229CA1997 A IN229CA1997 A IN 229CA1997A IN 191121 B IN191121 B IN 191121B
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Thomas Dr Zettler
Josef Dr Winnerl
Georg Georgakos
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN191121B publication Critical patent/IN191121B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fuses (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
IN229CA1997 1996-02-09 1997-02-10 IN191121B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19604776A DE19604776A1 (de) 1996-02-09 1996-02-09 Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse

Publications (1)

Publication Number Publication Date
IN191121B true IN191121B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2003-09-27

Family

ID=7784979

Family Applications (1)

Application Number Title Priority Date Filing Date
IN229CA1997 IN191121B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-02-09 1997-02-10

Country Status (10)

Country Link
EP (1) EP0879479B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3288385B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100414239B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1211856C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE239302T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE19604776A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (2) ES2158310T3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN191121B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
UA (1) UA50755C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1997029515A2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0992809A1 (de) 1998-09-28 2000-04-12 Siemens Aktiengesellschaft Schaltungsanordnung mit deaktivierbarem Scanpfad
DE10346460A1 (de) 2003-10-02 2005-05-19 Infineon Technologies Ag Anordnung und Verfahren zum Schutz von Fuses/Anti-Fuses
DE10349749B3 (de) * 2003-10-23 2005-05-25 Infineon Technologies Ag Anti-Fuse-Verbindung für integrierte Schaltungen sowie Verfahren zur Herstellung von Anti-Fuse-Verbindungen
JP4701034B2 (ja) * 2005-08-02 2011-06-15 パナソニック株式会社 半導体装置
US7576407B2 (en) * 2006-04-26 2009-08-18 Samsung Electronics Co., Ltd. Devices and methods for constructing electrically programmable integrated fuses for low power applications
US8542517B2 (en) 2011-06-13 2013-09-24 International Business Machines Corporation Low voltage programmable mosfet antifuse with body contact for diffusion heating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1131790B (it) * 1979-08-20 1986-06-25 Rca Corp Complesso universale di collegamento interno per circuiti integrati cmos/sos ad alta densita'
EP0054102A3 (en) * 1980-12-11 1983-07-27 Rockwell International Corporation Very high density cells comprising a rom and method of manufacturing same
GB2100057A (en) * 1981-05-27 1982-12-15 Post Office Method of forming conductive tracks in a semi-conductor body by annealing
EP0094073B1 (en) * 1982-05-12 1988-07-27 Kabushiki Kaisha Toshiba Semiconductor device capable of structural selection
GB2215128B (en) * 1988-02-23 1991-10-16 Stc Plc Improvements in integrated circuits
JPH0320063A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp 電気ヒューズ
FR2713398B1 (fr) * 1993-11-30 1996-01-19 Sgs Thomson Microelectronics Fusible pour circuit intégré.

Also Published As

Publication number Publication date
WO1997029515A3 (de) 1997-09-18
KR100414239B1 (ko) 2004-02-18
ES2198559T3 (es) 2004-02-01
ES2158310T3 (es) 2001-09-01
DE59709973D1 (de) 2003-06-05
CN1211856C (zh) 2005-07-20
WO1997029515A2 (de) 1997-08-14
DE19604776A1 (de) 1997-08-14
JP3288385B2 (ja) 2002-06-04
UA50755C2 (uk) 2002-11-15
ATE239302T1 (de) 2003-05-15
EP0879479B1 (de) 2003-05-02
JPH11506874A (ja) 1999-06-15
CN1210623A (zh) 1999-03-10
EP0879479A2 (de) 1998-11-25
KR19990082361A (ko) 1999-11-25

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