IN166970B - - Google Patents
Info
- Publication number
- IN166970B IN166970B IN855/DEL/86A IN855DE1986A IN166970B IN 166970 B IN166970 B IN 166970B IN 855DE1986 A IN855DE1986 A IN 855DE1986A IN 166970 B IN166970 B IN 166970B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10678—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer comprising UV absorbers or stabilizers, e.g. antioxidants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/291—Applications
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/786,579 US4642413A (en) | 1985-10-11 | 1985-10-11 | Power generating optical filter |
| US06/806,232 US4713493A (en) | 1985-10-11 | 1985-12-06 | Power generating optical filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN166970B true IN166970B (zh) | 1990-08-11 |
Family
ID=27120555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN855/DEL/86A IN166970B (zh) | 1985-10-11 | 1986-09-26 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4713493A (zh) |
| EP (1) | EP0218997B1 (zh) |
| JP (2) | JP2575667B2 (zh) |
| KR (1) | KR950000109B1 (zh) |
| AU (1) | AU6350886A (zh) |
| CA (1) | CA1268973A (zh) |
| DE (1) | DE3688772T2 (zh) |
| IN (1) | IN166970B (zh) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384075A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
| US5149351A (en) * | 1988-05-24 | 1992-09-22 | Asahi Glass Company Ltd. | Method for making a curved solar panel for an automobile |
| US5059254A (en) * | 1988-05-24 | 1991-10-22 | Asahi Glass Company Ltd. | Solar cell substrate and solar panel for automobile |
| DE3903521C2 (de) * | 1989-02-07 | 1993-11-25 | Kunert Heinz | Transparentes Element zur Verwendung als Fenster-, Wand, Dach- oder Brüstungselement |
| US5411895A (en) * | 1989-10-10 | 1995-05-02 | The United States Of America As Represented By The Secretary Of The Air Force | Hybrid multiple quantum well spatial light modulator |
| US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
| JP3127025B2 (ja) * | 1991-11-22 | 2001-01-22 | 株式会社デンソー | 薄膜ｅｌディスプレイ素子 |
| US6075872A (en) * | 1997-09-04 | 2000-06-13 | Tailored Lighting Inc. | Process for illuminating artwork |
| US5527999A (en) * | 1995-02-21 | 1996-06-18 | Delco Electronics Corp. | Multilayer conductor for printed circuits |
| US6324192B1 (en) | 1995-09-29 | 2001-11-27 | Coretek, Inc. | Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same |
| US5739945A (en) * | 1995-09-29 | 1998-04-14 | Tayebati; Parviz | Electrically tunable optical filter utilizing a deformable multi-layer mirror |
| US5959239A (en) * | 1997-06-02 | 1999-09-28 | The United States Of America As Represented By The United States Department Of Energy | Thermovoltaic semiconductor device including a plasma filter |
| JP3642386B2 (ja) * | 1998-09-30 | 2005-04-27 | 株式会社リコー | 半導体レーザ素子および光ディスク装置 |
| JP2000208800A (ja) | 1998-11-13 | 2000-07-28 | Fuji Xerox Co Ltd | 太陽電池及びそれを用いた自己電力供給型表示素子、並びに太陽電池の製造方法 |
| TW565812B (en) * | 2000-07-21 | 2003-12-11 | Ebauchesfabrik Eta Ag | Display assembly including an electro-optical cell and a photovoltaic cell |
| US6525264B2 (en) * | 2000-07-21 | 2003-02-25 | Sharp Kabushiki Kaisha | Thin-film solar cell module |
| WO2004047153A2 (en) * | 2002-11-20 | 2004-06-03 | Berkshire Laboratories, Inc. | High efficiency solar cells |
| JP4276444B2 (ja) * | 2003-01-16 | 2009-06-10 | Ｔｄｋ株式会社 | 鉄シリサイド膜の製造方法及び装置、光電変換素子の製造方法及び装置、並びに、光電変換装置の製造方法及び装置 |
| DE10345410A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Strahlungsdetektor |
| WO2005096394A1 (de) * | 2004-03-31 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Strahlungsdetektor |
| CN102136502B (zh) * | 2004-03-31 | 2014-10-22 | 奥斯兰姆奥普托半导体有限责任公司 | 辐射探测器 |
| EP1915785B1 (en) * | 2005-08-15 | 2016-04-20 | Merck Patent GmbH | Photovoltaic cells with interconnects to external circuit |
| DE102006006935A1 (de) * | 2006-02-14 | 2007-08-16 | Roth, Klaus, Dipl.-Phys. Dr.rer.nat. | Elektrischer Generator |
| US8426722B2 (en) | 2006-10-24 | 2013-04-23 | Zetta Research and Development LLC—AQT Series | Semiconductor grain and oxide layer for photovoltaic cells |
| US8373060B2 (en) * | 2006-10-24 | 2013-02-12 | Zetta Research and Development LLC—AQT Series | Semiconductor grain microstructures for photovoltaic cells |
| US8158880B1 (en) | 2007-01-17 | 2012-04-17 | Aqt Solar, Inc. | Thin-film photovoltaic structures including semiconductor grain and oxide layers |
| TW200844320A (en) * | 2007-05-08 | 2008-11-16 | Univ Nat Taiwan Science Tech | Window unit and window structure and profound wallboard |
| US8101039B2 (en) * | 2008-04-10 | 2012-01-24 | Cardinal Ig Company | Manufacturing of photovoltaic subassemblies |
| US20090194147A1 (en) * | 2008-02-01 | 2009-08-06 | Cardinal Ig Company | Dual seal photovoltaic assembly and method |
| US20090194156A1 (en) * | 2008-02-01 | 2009-08-06 | Grommesh Robert C | Dual seal photovoltaic glazing assembly and method |
| US20090320921A1 (en) * | 2008-02-01 | 2009-12-31 | Grommesh Robert C | Photovoltaic Glazing Assembly and Method |
| ES2372355T3 (es) * | 2008-04-10 | 2012-01-19 | Cardinal Ig Company | Conjuntos de acristalamiento que incorporan elementos fotovoltaicos y métodos de fabricación correspondientes. |
| TW201034562A (en) * | 2009-03-18 | 2010-10-01 | Lite On Technology Corp | Photovoltaic greenhouse structure |
| US8294858B2 (en) | 2009-03-31 | 2012-10-23 | Intel Corporation | Integrated photovoltaic cell for display device |
| DE102009029790A1 (de) * | 2009-06-18 | 2011-05-19 | GM Global Technology Operations, Inc., Detroit | Transportmittel mit mehrlagigen Photovoltaikstrukturen und Verfahren zur Herstellung derselben |
| US8759664B2 (en) | 2009-12-28 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Thin film solar cell strings |
| US9647162B2 (en) | 2011-01-20 | 2017-05-09 | Colossus EPC Inc. | Electronic power cell memory back-up battery |
| US20120187763A1 (en) | 2011-01-25 | 2012-07-26 | Isoline Component Company, Llc | Electronic power supply |
| US20120279566A1 (en) * | 2011-05-02 | 2012-11-08 | Basf Se | Photovoltaic element with increased long-term stability |
| EP2543644A3 (en) * | 2011-07-06 | 2017-12-20 | Changzhou Almaden Co., Ltd. | Physical tempered glass, solar cover plate, solar backsheet and solar panel |
| DE102011056459B4 (de) * | 2011-12-15 | 2020-12-10 | Vantage Film Gmbh | Verfahren zum Herstellen eines Objektivaufsatzes zur Erzeugung von Reflexen und Objektivaufsatz zur Erzeugung von Reflexen |
| EP2839502B1 (en) | 2012-04-17 | 2017-01-04 | Global Solar Energy, Inc. | Integrated thin film solar cell interconnection |
| DE102012110799A1 (de) * | 2012-11-09 | 2014-05-15 | Masdar Pv Gmbh | Solarmodul, Satz Solarmodule und entsprechendes Verfahren |
| CN105164816B (zh) | 2013-01-28 | 2017-03-08 | 环球太阳能公司 | 光伏互连系统、装置和方法 |
| US20160173027A1 (en) * | 2013-08-16 | 2016-06-16 | Jeffrey A. Davoren | Photovoltaic cell for solar power generator |
| US11011659B2 (en) * | 2017-08-14 | 2021-05-18 | Nissan Motor Co., Ltd. | Mobile body having reflection control layer |
| US10978990B2 (en) * | 2017-09-28 | 2021-04-13 | Tesla, Inc. | Glass cover with optical-filtering coating for managing color of a solar roof tile |
| US11431280B2 (en) | 2019-08-06 | 2022-08-30 | Tesla, Inc. | System and method for improving color appearance of solar roofs |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5129884A (zh) * | 1974-09-06 | 1976-03-13 | Sharp Kk | |
| US4166876A (en) * | 1977-03-28 | 1979-09-04 | Teijin Limited | Transparent, electrically conductive laminated structure and process for production thereof |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS571265A (en) * | 1980-06-02 | 1982-01-06 | Fuji Electric Co Ltd | Solar cell |
| IL63756A0 (en) * | 1980-09-09 | 1981-12-31 | Energy Conversion Devices Inc | Multiple cell photoresponsive amorphous devices |
| DE3044586A1 (de) * | 1980-11-24 | 1982-05-27 | Hubert 7896 Wutöschingen Pfluger | Flexibles solarautodach |
| JPS57104278A (en) * | 1980-12-22 | 1982-06-29 | Semiconductor Energy Lab Co Ltd | Photoelectric converting device |
| JPS57187975A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Photoelectric converter |
| US4400577A (en) * | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
| US4387265A (en) * | 1981-07-17 | 1983-06-07 | University Of Delaware | Tandem junction amorphous semiconductor photovoltaic cell |
| JPS5850782A (ja) * | 1981-09-21 | 1983-03-25 | Fuji Electric Corp Res & Dev Ltd | 自動車用太陽電池 |
| JPS58148471A (ja) * | 1982-03-01 | 1983-09-03 | Yoshiro Odaka | 窓による照射光エネルギ−採出方法とその採出装置 |
| AU560521B2 (en) * | 1982-10-18 | 1987-04-09 | Energy Conversion Devices Inc. | Layered amorphous semiconductor alloys |
| JPS59105379A (ja) * | 1982-12-08 | 1984-06-18 | Hitachi Ltd | アモルフアスシリコン太陽電池 |
| JPS59115571A (ja) * | 1982-12-23 | 1984-07-04 | Yoshiro Odaka | レンズによる照射光エネルギ−採出方法とその採出装置 |
| US4598164A (en) * | 1983-10-06 | 1986-07-01 | Exxon Research And Engineering Co. | Solar cell made from amorphous superlattice material |
| JPS60142576A (ja) * | 1983-12-28 | 1985-07-27 | Seiko Epson Corp | 薄膜太陽電池基板 |
| JPS60235442A (ja) * | 1984-05-08 | 1985-11-22 | Sanyo Electric Co Ltd | 光起電力連係制御装置 |
| JPS6173033A (ja) * | 1984-09-19 | 1986-04-15 | Fuji Electric Co Ltd | カラ−感光装置 |
| US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
| US4642413A (en) * | 1985-10-11 | 1987-02-10 | Energy Conversion Devices, Inc. | Power generating optical filter |
| DE3704880A1 (de) * | 1986-07-11 | 1988-01-21 | Nukem Gmbh | Transparentes, leitfaehiges schichtsystem |
-
1985
- 1985-12-06 US US06/806,232 patent/US4713493A/en not_active Expired - Lifetime
-
1986
- 1986-09-25 CA CA000519109A patent/CA1268973A/en not_active Expired - Fee Related
- 1986-09-26 IN IN855/DEL/86A patent/IN166970B/en unknown
- 1986-10-02 EP EP86113548A patent/EP0218997B1/en not_active Expired - Lifetime
- 1986-10-02 AU AU63508/86A patent/AU6350886A/en not_active Abandoned
- 1986-10-02 DE DE86113548T patent/DE3688772T2/de not_active Expired - Fee Related
- 1986-10-09 JP JP61241170A patent/JP2575667B2/ja not_active Expired - Lifetime
- 1986-10-10 KR KR1019860008482A patent/KR950000109B1/ko active IP Right Grant
-
1995
- 1995-07-24 JP JP7187457A patent/JP2752924B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3688772D1 (zh) | 1993-09-02 |
| JP2575667B2 (ja) | 1997-01-29 |
| JP2752924B2 (ja) | 1998-05-18 |
| AU6350886A (en) | 1987-04-16 |
| DE3688772T2 (de) | 1993-11-11 |
| CA1268973A (en) | 1990-05-15 |
| EP0218997A3 (en) | 1989-07-05 |
| EP0218997A2 (en) | 1987-04-22 |
| EP0218997B1 (en) | 1993-07-28 |
| JPS6293982A (ja) | 1987-04-30 |
| KR870004320A (ko) | 1987-05-08 |
| US4713493A (en) | 1987-12-15 |
| KR950000109B1 (ko) | 1995-01-09 |
| JPH0856007A (ja) | 1996-02-27 |