IL97470A - A system for supervising a device for growing crystals and a system for refilling molts for it - Google Patents
A system for supervising a device for growing crystals and a system for refilling molts for itInfo
- Publication number
- IL97470A IL97470A IL9747091A IL9747091A IL97470A IL 97470 A IL97470 A IL 97470A IL 9747091 A IL9747091 A IL 9747091A IL 9747091 A IL9747091 A IL 9747091A IL 97470 A IL97470 A IL 97470A
- Authority
- IL
- Israel
- Prior art keywords
- weight
- melt
- crystalline body
- crucible
- growing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Hydroponics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/492,886 US5085728A (en) | 1987-05-05 | 1990-03-12 | System for controlling crystal growth apparatus and melt replenishment system therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
IL97470A0 IL97470A0 (en) | 1992-06-21 |
IL97470A true IL97470A (en) | 1994-10-07 |
Family
ID=23958003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL9747091A IL97470A (en) | 1990-03-12 | 1991-03-07 | A system for supervising a device for growing crystals and a system for refilling molts for it |
Country Status (12)
Country | Link |
---|---|
US (1) | US5085728A (de) |
EP (1) | EP0474810B1 (de) |
JP (1) | JP2638299B2 (de) |
KR (1) | KR970005007B1 (de) |
CN (1) | CN1026134C (de) |
AT (1) | ATE148508T1 (de) |
AU (1) | AU635125B2 (de) |
CA (1) | CA2053234A1 (de) |
DE (1) | DE69124441T2 (de) |
IL (1) | IL97470A (de) |
WO (1) | WO1991014027A1 (de) |
ZA (1) | ZA911656B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6139811A (en) * | 1999-03-25 | 2000-10-31 | Ase Americas, Inc. | EFG crystal growth apparatus |
US6562132B2 (en) | 2001-04-04 | 2003-05-13 | Ase Americas, Inc. | EFG crystal growth apparatus and method |
US8021483B2 (en) | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
US7635414B2 (en) * | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
US20080138927A1 (en) * | 2004-03-11 | 2008-06-12 | The University Of Vermont And State Agricultural College | Systems and Methods for Fabricating Crystalline Thin Structures Using Meniscal Growth Techniques |
DE102006041736A1 (de) * | 2006-09-04 | 2008-03-20 | Schott Solar Gmbh | Verfahren und Anordnung zur Herstellung eines Rohres |
KR20130110177A (ko) * | 2010-10-01 | 2013-10-08 | 에버그린 솔라, 인크. | 웨이퍼 중량의 함수로서의 시트 웨이퍼 처리 |
JP5483591B2 (ja) * | 2010-10-08 | 2014-05-07 | 日鉄住金ファインテック株式会社 | 単結晶引上装置および坩堝支持装置 |
CN102534760A (zh) * | 2011-12-28 | 2012-07-04 | 苏州优晶光电科技有限公司 | 用于监测晶体生长的装置 |
CN102691098B (zh) * | 2012-05-30 | 2015-04-22 | 苏州科技学院 | 泡生法制备蓝宝石晶体的生长方法 |
CN103882519A (zh) * | 2014-04-04 | 2014-06-25 | 天津环煜电子材料科技有限公司 | 一种硅管及硅管太阳电池级多晶硅棒制备方法 |
CN107059114A (zh) * | 2017-03-08 | 2017-08-18 | 同济大学 | 一种导模法生长晶体光纤的模具及方法 |
US11248312B2 (en) | 2019-11-25 | 2022-02-15 | Ii-Vi Delaware, Inc. | Continuous replenishment crystal growth |
US11274379B2 (en) | 2020-02-26 | 2022-03-15 | Ii-Vi Delaware, Inc. | System for growing crystal sheets |
KR102271708B1 (ko) * | 2020-09-28 | 2021-07-01 | 한화솔루션 주식회사 | 잉곳 성장 장치 및 그 제어 방법 |
CN112362222B (zh) * | 2020-11-09 | 2022-03-04 | 哈尔滨晶创科技有限公司 | 一种单晶生长过程压力监控系统 |
CN113428671B (zh) * | 2020-11-23 | 2022-04-26 | 眉山博雅新材料股份有限公司 | 一种加料控制方法和系统 |
CN112705590B (zh) * | 2020-12-11 | 2023-02-07 | 山东新升光电科技有限责任公司 | 一种蓝宝石单晶炉提拉杆矫直装置及方法 |
CN115491749B (zh) * | 2022-08-16 | 2023-11-21 | 晶科能源股份有限公司 | 单晶炉加料系统及加料方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1434527A (en) * | 1972-09-08 | 1976-05-05 | Secr Defence | Growth of crystalline material |
US3980438A (en) * | 1975-08-28 | 1976-09-14 | Arthur D. Little, Inc. | Apparatus for forming semiconductor crystals of essentially uniform diameter |
JPS57123892A (en) * | 1981-01-17 | 1982-08-02 | Toshiba Corp | Preparation and apparatus of single crystal |
US4544528A (en) * | 1981-08-03 | 1985-10-01 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
JPS5933554B2 (ja) * | 1982-08-19 | 1984-08-16 | 株式会社東芝 | 結晶成長装置 |
JPS5910960A (ja) * | 1983-05-20 | 1984-01-20 | Canon Inc | 複写制御装置 |
FR2553793B1 (fr) * | 1983-10-19 | 1986-02-14 | Crismatec | Procede de commande d'une machine de tirage de monocristaux |
CA1261715A (en) * | 1984-07-06 | 1989-09-26 | General Signal Corporation | Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique |
EP0313619B1 (de) * | 1987-05-05 | 1992-07-01 | Mobil Solar Energy Corporation | Regelungssystem für ein anwachsapparat röhrenförmiger kristallinkörper |
JPH01122988A (ja) * | 1987-11-06 | 1989-05-16 | Kawasaki Steel Corp | 単結晶を成長させる方法および単結晶製造装置 |
EP0355747B1 (de) * | 1988-08-19 | 1994-07-27 | Mitsubishi Materials Corporation | Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen |
-
1990
- 1990-03-12 US US07/492,886 patent/US5085728A/en not_active Expired - Lifetime
-
1991
- 1991-02-21 CA CA002053234A patent/CA2053234A1/en not_active Abandoned
- 1991-02-21 AU AU74529/91A patent/AU635125B2/en not_active Expired
- 1991-02-21 KR KR1019910701477A patent/KR970005007B1/ko not_active IP Right Cessation
- 1991-02-21 EP EP91905446A patent/EP0474810B1/de not_active Expired - Lifetime
- 1991-02-21 AT AT91905446T patent/ATE148508T1/de not_active IP Right Cessation
- 1991-02-21 DE DE69124441T patent/DE69124441T2/de not_active Expired - Lifetime
- 1991-02-21 WO PCT/US1991/001153 patent/WO1991014027A1/en active IP Right Grant
- 1991-02-21 JP JP3505364A patent/JP2638299B2/ja not_active Expired - Lifetime
- 1991-03-06 ZA ZA911656A patent/ZA911656B/xx unknown
- 1991-03-07 IL IL9747091A patent/IL97470A/en not_active IP Right Cessation
- 1991-03-11 CN CN91101558A patent/CN1026134C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU635125B2 (en) | 1993-03-11 |
IL97470A0 (en) | 1992-06-21 |
CN1054804A (zh) | 1991-09-25 |
US5085728A (en) | 1992-02-04 |
JPH04506202A (ja) | 1992-10-29 |
JP2638299B2 (ja) | 1997-08-06 |
ZA911656B (en) | 1991-12-24 |
EP0474810B1 (de) | 1997-01-29 |
DE69124441D1 (de) | 1997-03-13 |
EP0474810A4 (en) | 1992-09-16 |
WO1991014027A1 (en) | 1991-09-19 |
EP0474810A1 (de) | 1992-03-18 |
AU7452991A (en) | 1991-10-10 |
KR920701532A (ko) | 1992-08-12 |
CA2053234A1 (en) | 1991-09-13 |
CN1026134C (zh) | 1994-10-05 |
ATE148508T1 (de) | 1997-02-15 |
DE69124441T2 (de) | 1997-08-28 |
KR970005007B1 (ko) | 1997-04-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
HC | Change of name of proprietor(s) | ||
RH | Patent void |