IL97470A - מערכת לפיקוח על התקן לגידול גבישים ומערכת למילוי שנית של מותכים עבורה - Google Patents

מערכת לפיקוח על התקן לגידול גבישים ומערכת למילוי שנית של מותכים עבורה

Info

Publication number
IL97470A
IL97470A IL9747091A IL9747091A IL97470A IL 97470 A IL97470 A IL 97470A IL 9747091 A IL9747091 A IL 9747091A IL 9747091 A IL9747091 A IL 9747091A IL 97470 A IL97470 A IL 97470A
Authority
IL
Israel
Prior art keywords
weight
melt
crystalline body
crucible
growing
Prior art date
Application number
IL9747091A
Other languages
English (en)
Other versions
IL97470A0 (en
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of IL97470A0 publication Critical patent/IL97470A0/xx
Publication of IL97470A publication Critical patent/IL97470A/he

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Hydroponics (AREA)
IL9747091A 1990-03-12 1991-03-07 מערכת לפיקוח על התקן לגידול גבישים ומערכת למילוי שנית של מותכים עבורה IL97470A (he)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/492,886 US5085728A (en) 1987-05-05 1990-03-12 System for controlling crystal growth apparatus and melt replenishment system therefor

Publications (2)

Publication Number Publication Date
IL97470A0 IL97470A0 (en) 1992-06-21
IL97470A true IL97470A (he) 1994-10-07

Family

ID=23958003

Family Applications (1)

Application Number Title Priority Date Filing Date
IL9747091A IL97470A (he) 1990-03-12 1991-03-07 מערכת לפיקוח על התקן לגידול גבישים ומערכת למילוי שנית של מותכים עבורה

Country Status (12)

Country Link
US (1) US5085728A (he)
EP (1) EP0474810B1 (he)
JP (1) JP2638299B2 (he)
KR (1) KR970005007B1 (he)
CN (1) CN1026134C (he)
AT (1) ATE148508T1 (he)
AU (1) AU635125B2 (he)
CA (1) CA2053234A1 (he)
DE (1) DE69124441T2 (he)
IL (1) IL97470A (he)
WO (1) WO1991014027A1 (he)
ZA (1) ZA911656B (he)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139811A (en) * 1999-03-25 2000-10-31 Ase Americas, Inc. EFG crystal growth apparatus
US6562132B2 (en) 2001-04-04 2003-05-13 Ase Americas, Inc. EFG crystal growth apparatus and method
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US20080138927A1 (en) * 2004-03-11 2008-06-12 The University Of Vermont And State Agricultural College Systems and Methods for Fabricating Crystalline Thin Structures Using Meniscal Growth Techniques
DE102006041736A1 (de) * 2006-09-04 2008-03-20 Schott Solar Gmbh Verfahren und Anordnung zur Herstellung eines Rohres
KR20130110177A (ko) * 2010-10-01 2013-10-08 에버그린 솔라, 인크. 웨이퍼 중량의 함수로서의 시트 웨이퍼 처리
JP5483591B2 (ja) * 2010-10-08 2014-05-07 日鉄住金ファインテック株式会社 単結晶引上装置および坩堝支持装置
CN102534760A (zh) * 2011-12-28 2012-07-04 苏州优晶光电科技有限公司 用于监测晶体生长的装置
CN102691098B (zh) * 2012-05-30 2015-04-22 苏州科技学院 泡生法制备蓝宝石晶体的生长方法
CN103882519A (zh) * 2014-04-04 2014-06-25 天津环煜电子材料科技有限公司 一种硅管及硅管太阳电池级多晶硅棒制备方法
CN107059114A (zh) * 2017-03-08 2017-08-18 同济大学 一种导模法生长晶体光纤的模具及方法
US11248312B2 (en) 2019-11-25 2022-02-15 Ii-Vi Delaware, Inc. Continuous replenishment crystal growth
US11274379B2 (en) 2020-02-26 2022-03-15 Ii-Vi Delaware, Inc. System for growing crystal sheets
KR102271708B1 (ko) * 2020-09-28 2021-07-01 한화솔루션 주식회사 잉곳 성장 장치 및 그 제어 방법
CN112362222B (zh) * 2020-11-09 2022-03-04 哈尔滨晶创科技有限公司 一种单晶生长过程压力监控系统
CN113428671B (zh) * 2020-11-23 2022-04-26 眉山博雅新材料股份有限公司 一种加料控制方法和系统
CN112705590B (zh) * 2020-12-11 2023-02-07 山东新升光电科技有限责任公司 一种蓝宝石单晶炉提拉杆矫直装置及方法
CN115491749B (zh) * 2022-08-16 2023-11-21 晶科能源股份有限公司 单晶炉加料系统及加料方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
JPS57123892A (en) * 1981-01-17 1982-08-02 Toshiba Corp Preparation and apparatus of single crystal
US4544528A (en) * 1981-08-03 1985-10-01 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
JPS5933554B2 (ja) * 1982-08-19 1984-08-16 株式会社東芝 結晶成長装置
JPS5910960A (ja) * 1983-05-20 1984-01-20 Canon Inc 複写制御装置
FR2553793B1 (fr) * 1983-10-19 1986-02-14 Crismatec Procede de commande d'une machine de tirage de monocristaux
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
KR950004788B1 (ko) * 1987-05-05 1995-05-10 모빌 쏠 라 에너지 코포레이션 관상결정체 성장장치의 제어시스템
JPH01122988A (ja) * 1987-11-06 1989-05-16 Kawasaki Steel Corp 単結晶を成長させる方法および単結晶製造装置
US5074953A (en) * 1988-08-19 1991-12-24 Mitsubishi Materials Corporation Method for monocrystalline growth of dissociative compound semiconductors

Also Published As

Publication number Publication date
WO1991014027A1 (en) 1991-09-19
EP0474810B1 (en) 1997-01-29
ATE148508T1 (de) 1997-02-15
CA2053234A1 (en) 1991-09-13
IL97470A0 (en) 1992-06-21
ZA911656B (en) 1991-12-24
US5085728A (en) 1992-02-04
KR920701532A (ko) 1992-08-12
CN1026134C (zh) 1994-10-05
DE69124441D1 (de) 1997-03-13
EP0474810A1 (en) 1992-03-18
KR970005007B1 (ko) 1997-04-11
DE69124441T2 (de) 1997-08-28
EP0474810A4 (en) 1992-09-16
CN1054804A (zh) 1991-09-25
JPH04506202A (ja) 1992-10-29
JP2638299B2 (ja) 1997-08-06
AU635125B2 (en) 1993-03-11
AU7452991A (en) 1991-10-10

Similar Documents

Publication Publication Date Title
AU635125B2 (en) System for controlling crystal growth apparatus and melt replenishment system therefor
JP2754104B2 (ja) 半導体単結晶引上用粒状原料供給装置
CA1318224C (en) System for controlling apparatus for growing tubular crystalline bodies
EP1169497B1 (en) Method and system of controlling taper growth in a semiconductor crystal growth process
EP0432914B1 (en) A method of controlling oxygen concentration in single crystal
EP0428415B1 (en) A method for controlling specific resistance of single crystal
US4936947A (en) System for controlling apparatus for growing tubular crystalline bodies
EP0498653B1 (en) A method for measuring the diameter of single crystal ingot
US8257496B1 (en) Crucible weight measurement system for controlling feedstock introduction in Czochralski crystal growth
USRE34375E (en) System for controlling apparatus for growing tubular crystalline bodies
JP2523821B2 (ja) Ｃｚ炉への原料供給装置
RU1122014C (ru) Способ управлени процессом выт гивани кристалла из расплава и устройство дл его осуществлени
CN116908037A (zh) 设施作物冠层水面蒸发量检测装置、灌溉系统及方法
JPH0354188A (ja) 単結晶製造方法
JPS62298766A (ja) 粉粒体の移送速度計測装置
JPS63282196A (ja) 単結晶の製造方法及びその装置

Legal Events

Date Code Title Description
HC Change of name of proprietor(s)
RH Patent void