IL96971A0 - Solid state radiation detector - Google Patents
Solid state radiation detectorInfo
- Publication number
- IL96971A0 IL96971A0 IL96971A IL9697191A IL96971A0 IL 96971 A0 IL96971 A0 IL 96971A0 IL 96971 A IL96971 A IL 96971A IL 9697191 A IL9697191 A IL 9697191A IL 96971 A0 IL96971 A0 IL 96971A0
- Authority
- IL
- Israel
- Prior art keywords
- solid state
- radiation detector
- state radiation
- detector
- solid
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47820190A | 1990-02-09 | 1990-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL96971A0 true IL96971A0 (en) | 1992-03-29 |
Family
ID=23898935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL96971A IL96971A0 (en) | 1990-02-09 | 1991-01-16 | Solid state radiation detector |
Country Status (7)
Country | Link |
---|---|
US (1) | US5420452A (fr) |
EP (1) | EP0441521B1 (fr) |
JP (1) | JPH04214669A (fr) |
KR (1) | KR0162903B1 (fr) |
CA (1) | CA2034118A1 (fr) |
DE (1) | DE69126221T2 (fr) |
IL (1) | IL96971A0 (fr) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5220170A (en) * | 1985-12-11 | 1993-06-15 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
US5464984A (en) * | 1985-12-11 | 1995-11-07 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
US5381013A (en) * | 1985-12-11 | 1995-01-10 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
GB9202693D0 (en) * | 1992-02-08 | 1992-03-25 | Philips Electronics Uk Ltd | A method of manufacturing a large area active matrix array |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
JP3431995B2 (ja) * | 1993-06-03 | 2003-07-28 | キヤノン株式会社 | 撮像装置 |
TW264575B (fr) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
IL111436A (en) * | 1993-11-19 | 1998-07-15 | Ail Systems Inc | Gamma ray imaging system |
US5606165A (en) * | 1993-11-19 | 1997-02-25 | Ail Systems Inc. | Square anti-symmetric uniformly redundant array coded aperture imaging system |
JP3066944B2 (ja) * | 1993-12-27 | 2000-07-17 | キヤノン株式会社 | 光電変換装置、その駆動方法及びそれを有するシステム |
US5498880A (en) * | 1995-01-12 | 1996-03-12 | E. I. Du Pont De Nemours And Company | Image capture panel using a solid state device |
US5619033A (en) * | 1995-06-07 | 1997-04-08 | Xerox Corporation | Layered solid state photodiode sensor array |
DE19524857C2 (de) * | 1995-07-07 | 1998-04-09 | Siemens Ag | Bilddetektor |
JP3703217B2 (ja) * | 1995-09-04 | 2005-10-05 | キヤノン株式会社 | X線検出装置 |
TW331667B (en) * | 1995-09-05 | 1998-05-11 | Canon Kk | Photoelectric converter |
JP3416351B2 (ja) * | 1995-09-28 | 2003-06-16 | キヤノン株式会社 | 光電変換装置及びその駆動方法、それを用いたx線撮像装置及びその駆動方法 |
FR2750821B1 (fr) * | 1996-07-05 | 1998-09-11 | Commissariat Energie Atomique | Procede et dispositif pour la prise d'images numeriques avec controle et optimisation du temps d'exposition de l'objet a des rayonnements x ou y |
US5753921A (en) * | 1996-07-16 | 1998-05-19 | Eastman Kodak Company | X-ray imaging detector with limited substrate and converter |
GB2317742A (en) * | 1996-09-30 | 1998-04-01 | Sharp Kk | Imaging device |
US5834782A (en) * | 1996-11-20 | 1998-11-10 | Schick Technologies, Inc. | Large area image detector |
US5973311A (en) * | 1997-02-12 | 1999-10-26 | Imation Corp | Pixel array with high and low resolution mode |
US6013916A (en) * | 1997-07-23 | 2000-01-11 | The Regents Of The University Of Michigan | Flat panel dosimeter |
JP3649907B2 (ja) * | 1998-01-20 | 2005-05-18 | シャープ株式会社 | 二次元画像検出器およびその製造方法 |
JP3976915B2 (ja) * | 1998-02-09 | 2007-09-19 | シャープ株式会社 | 二次元画像検出器およびその製造方法 |
JP3549039B2 (ja) * | 1998-03-23 | 2004-08-04 | シャープ株式会社 | 二次元画像検出器 |
JP2000131444A (ja) * | 1998-10-28 | 2000-05-12 | Canon Inc | 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法 |
JP3430040B2 (ja) * | 1998-11-19 | 2003-07-28 | シャープ株式会社 | 二次元画像検出器およびその製造方法 |
JP3847494B2 (ja) * | 1998-12-14 | 2006-11-22 | シャープ株式会社 | 二次元画像検出器の製造方法 |
WO2000039858A2 (fr) | 1998-12-28 | 2000-07-06 | Fairchild Semiconductor Corporation | Transistor mos a effet de champ a portee isolee, a double diffusion et grille metallique, a vitesse de commutation accrue et fuite de courant tunnel de grille reduite |
US6051867A (en) * | 1999-05-06 | 2000-04-18 | Hewlett-Packard Company | Interlayer dielectric for passivation of an elevated integrated circuit sensor structure |
US20050117683A1 (en) * | 2000-02-10 | 2005-06-02 | Andrey Mishin | Multiple energy x-ray source for security applications |
US20080211431A1 (en) * | 2000-02-10 | 2008-09-04 | American Science And Engineering, Inc. | Pulse-to-Pulse-Switchable Multiple-Energy Linear Accelerators Based on Fast RF Power Switching |
US20030165211A1 (en) * | 2002-03-01 | 2003-09-04 | Lee Grodzins | Detectors for x-rays and neutrons |
US20050105665A1 (en) * | 2000-03-28 | 2005-05-19 | Lee Grodzins | Detection of neutrons and sources of radioactive material |
US7538325B2 (en) * | 2000-02-10 | 2009-05-26 | American Science And Engineering, Inc. | Single-pulse-switched multiple energy X-ray source applications |
US8325871B2 (en) | 2000-03-28 | 2012-12-04 | American Science And Engineering, Inc. | Radiation threat detection |
JP2001313384A (ja) * | 2000-04-28 | 2001-11-09 | Shimadzu Corp | 放射線検出器 |
US7902546B2 (en) * | 2000-08-08 | 2011-03-08 | Translucent, Inc. | Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
KR100396696B1 (ko) * | 2000-11-13 | 2003-09-02 | 엘지.필립스 엘시디 주식회사 | 저저항 배선을 갖는 액정 디스플레이 패널 |
KR20010008150A (ko) * | 2000-11-13 | 2001-02-05 | 정두락 | 박막트랜지스터형 광센서를 이용한 발광부 착탈형, 다기능디지탈 엑스레이 실시간, 평판영상기. |
US6555934B2 (en) * | 2000-12-18 | 2003-04-29 | Ge Medical Systems Global Technology Company, Llc | Method and apparatus for control of large-area ground plane potentials |
JP3678162B2 (ja) * | 2001-04-12 | 2005-08-03 | 株式会社島津製作所 | 放射線検出装置 |
US7300829B2 (en) * | 2003-06-02 | 2007-11-27 | Applied Materials, Inc. | Low temperature process for TFT fabrication |
DE10333841B4 (de) * | 2003-07-24 | 2007-05-10 | Infineon Technologies Ag | Verfahren zur Herstellung eines Nutzens mit in Zeilen und Spalten angeordneten Halbleiterbauteilpositionen und Verfahren zur Herstellung eines Halbleiterbauteils |
US7253391B2 (en) | 2003-09-19 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Optical sensor device and electronic apparatus |
CN100477240C (zh) * | 2003-10-06 | 2009-04-08 | 株式会社半导体能源研究所 | 半导体器件以及制造该器件的方法 |
JP2005121415A (ja) * | 2003-10-15 | 2005-05-12 | Shimadzu Corp | 粒度分布測定装置 |
US7010084B1 (en) | 2004-08-18 | 2006-03-07 | Ge Medical Systems Global Technology Company, Llc | Light detector, radiation detector and radiation tomography apparatus |
JP4817636B2 (ja) * | 2004-10-04 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP4773768B2 (ja) * | 2005-08-16 | 2011-09-14 | キヤノン株式会社 | 放射線撮像装置、その制御方法及び放射線撮像システム |
GB0517741D0 (en) * | 2005-08-31 | 2005-10-12 | E2V Tech Uk Ltd | Image sensor |
KR101150142B1 (ko) * | 2006-04-06 | 2012-06-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 기판 상에 아연 산화물 투명 전도성 산화물의 반응성 스퍼터링 |
US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
US20080254613A1 (en) * | 2007-04-10 | 2008-10-16 | Applied Materials, Inc. | Methods for forming metal interconnect structure for thin film transistor applications |
US7927713B2 (en) | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
KR101603180B1 (ko) * | 2007-08-02 | 2016-03-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 반도체 물질들을 이용하는 박막 트랜지스터들 |
US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (fr) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Procédé de fabrication de réseau de transistors à couches minces d’oxyde métalliques avec couche d’arrêt de gravure |
US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
US8483008B2 (en) * | 2008-11-08 | 2013-07-09 | Westerngeco L.L.C. | Coil shooting mode |
US20100133094A1 (en) * | 2008-12-02 | 2010-06-03 | Applied Materials, Inc. | Transparent conductive film with high transmittance formed by a reactive sputter deposition |
US20100163406A1 (en) * | 2008-12-30 | 2010-07-01 | Applied Materials, Inc. | Substrate support in a reactive sputter chamber |
US7947959B2 (en) * | 2009-04-21 | 2011-05-24 | Honeywell International Inc. | Enhanced sensitivity solid state radiation detector |
KR101819757B1 (ko) | 2009-06-17 | 2018-01-17 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 평판 x-선 영상기에서의 포토다이오드 및 기타 센서 구조물, 및 박막 전자 회로에 기초하여 평판 x-선 영상기에서의 포토다이오드 및 기타 센서 구조물의 토폴로지적 균일성을 향상시키는 방법 |
WO2011037829A2 (fr) | 2009-09-24 | 2011-03-31 | Applied Materials, Inc. | Procédés de fabrication de transistor en couches minces (tft) à base d'oxyde métallique ou d'oxynitrure métallique à l'aide d'un procédé par voie humide pour une gravure de métal source-drain |
US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
TWI545788B (zh) | 2014-10-03 | 2016-08-11 | 財團法人工業技術研究院 | 板材與模組結構 |
CN107765289B (zh) * | 2017-11-06 | 2024-06-25 | 天津大学 | 基于柔性pin二极管的辐照强度检测器 |
KR102660806B1 (ko) * | 2019-02-26 | 2024-04-26 | 에이에스엠엘 네델란즈 비.브이. | 이득 엘리먼트를 갖는 하전 입자 검출기 |
US12021092B2 (en) * | 2020-04-17 | 2024-06-25 | Beijing Boe Sensor Technology Co., Ltd. | Flat panel detector substrate and manufacturing method thereof, and flat panel detector |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4011454A (en) * | 1975-04-28 | 1977-03-08 | General Electric Company | Structured X-ray phosphor screen |
US4067104A (en) * | 1977-02-24 | 1978-01-10 | Rockwell International Corporation | Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components |
US4200473A (en) * | 1979-03-12 | 1980-04-29 | Rca Corporation | Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer |
FR2469805A1 (fr) * | 1979-11-09 | 1981-05-22 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
FR2523371A1 (fr) * | 1982-03-10 | 1983-09-16 | Contellec Michel Le | Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element |
US4467342A (en) * | 1982-07-15 | 1984-08-21 | Rca Corporation | Multi-chip imager |
US4670765A (en) * | 1984-04-02 | 1987-06-02 | Sharp Kabushiki Kaisha | Semiconductor photodetector element |
US4660095A (en) * | 1984-05-04 | 1987-04-21 | Energy Conversion Devices, Inc. | Contact-type document scanner and method |
US4675739A (en) * | 1984-05-04 | 1987-06-23 | Energy Conversion Devices, Inc. | Integrated radiation sensing array |
CA1279127C (fr) * | 1984-05-04 | 1991-01-15 | Vincent D. Cannella | Reseau de detecteurs de rayonnement |
US4672454A (en) * | 1984-05-04 | 1987-06-09 | Energy Conversion Devices, Inc. | X-ray image scanner and method |
US4689487A (en) * | 1984-09-03 | 1987-08-25 | Kabushiki Kaisha Toshiba | Radiographic image detection apparatus |
JPH0677079B2 (ja) * | 1984-09-18 | 1994-09-28 | コニカ株式会社 | 放射線画像情報読取装置 |
JPS61196570A (ja) * | 1985-02-25 | 1986-08-30 | Hitachi Zosen Corp | アモルフアスシリコンx線センサ |
JPH06101576B2 (ja) * | 1985-02-25 | 1994-12-12 | 日立造船株式会社 | アモルフアスシリコンx線センサ |
JPS61196571A (ja) * | 1985-02-25 | 1986-08-30 | Hitachi Zosen Corp | アモルフアスシリコンx線センサ |
JPS61196572A (ja) * | 1985-02-25 | 1986-08-30 | Hitachi Zosen Corp | アモルフアスシリコンx線センサ |
FR2598250B1 (fr) * | 1986-04-30 | 1988-07-08 | Thomson Csf | Panneau de prise de vue radiologique, et procede de fabrication |
US4785186A (en) * | 1986-10-21 | 1988-11-15 | Xerox Corporation | Amorphous silicon ionizing particle detectors |
US4982095A (en) * | 1987-09-04 | 1991-01-01 | Hitachi, Ltd. | Multi-element type radiation detector |
-
1991
- 1991-01-14 CA CA002034118A patent/CA2034118A1/fr not_active Abandoned
- 1991-01-16 IL IL96971A patent/IL96971A0/xx unknown
- 1991-01-30 DE DE69126221T patent/DE69126221T2/de not_active Expired - Fee Related
- 1991-01-30 EP EP91300700A patent/EP0441521B1/fr not_active Expired - Lifetime
- 1991-02-08 KR KR1019910002182A patent/KR0162903B1/ko not_active IP Right Cessation
- 1991-02-08 JP JP3039171A patent/JPH04214669A/ja active Pending
-
1993
- 1993-10-18 US US08/138,622 patent/US5420452A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0441521B1 (fr) | 1997-05-28 |
DE69126221T2 (de) | 1997-11-20 |
KR0162903B1 (ko) | 1999-05-01 |
JPH04214669A (ja) | 1992-08-05 |
CA2034118A1 (fr) | 1991-08-10 |
DE69126221D1 (de) | 1997-07-03 |
KR910015866A (ko) | 1991-09-30 |
EP0441521A1 (fr) | 1991-08-14 |
US5420452A (en) | 1995-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KB | Patent renewed |