IL93399A - Epithelium of a diamond or a layer of diamond figures - Google Patents

Epithelium of a diamond or a layer of diamond figures

Info

Publication number
IL93399A
IL93399A IL9339990A IL9339990A IL93399A IL 93399 A IL93399 A IL 93399A IL 9339990 A IL9339990 A IL 9339990A IL 9339990 A IL9339990 A IL 9339990A IL 93399 A IL93399 A IL 93399A
Authority
IL
Israel
Prior art keywords
substrate
diamond
fee
layer
carbon atoms
Prior art date
Application number
IL9339990A
Other languages
English (en)
Hebrew (he)
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Publication of IL93399A publication Critical patent/IL93399A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C23C14/0611—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL9339990A 1989-02-16 1990-02-14 Epithelium of a diamond or a layer of diamond figures IL93399A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ZA891207 1989-02-16

Publications (1)

Publication Number Publication Date
IL93399A true IL93399A (en) 1994-06-24

Family

ID=25579602

Family Applications (1)

Application Number Title Priority Date Filing Date
IL9339990A IL93399A (en) 1989-02-16 1990-02-14 Epithelium of a diamond or a layer of diamond figures

Country Status (5)

Country Link
US (1) US4997636A (ja)
EP (1) EP0384667B1 (ja)
JP (1) JP2529749B2 (ja)
DE (1) DE69003557T2 (ja)
IL (1) IL93399A (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252174A (en) * 1989-06-19 1993-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing substrates for depositing diamond thin films
US5273731A (en) * 1989-09-14 1993-12-28 General Electric Company Substantially transparent free standing diamond films
EP0459425A1 (en) * 1990-05-30 1991-12-04 Idemitsu Petrochemical Company Limited Process for the preparation of diamond
US5221411A (en) * 1991-04-08 1993-06-22 North Carolina State University Method for synthesis and processing of continuous monocrystalline diamond thin films
US5176788A (en) * 1991-07-08 1993-01-05 The United States Of America As Represented By The Secretary Of The Navy Method of joining diamond structures
US5298106A (en) * 1991-07-08 1994-03-29 The United States Of America As Represented By The Secretary Of The Navy Method of doping single crystal diamond for electronic devices
US5429069A (en) * 1991-07-11 1995-07-04 Fang; Pao-Hsien Method for growing diamond crystals utilizing a diffusion fed epitaxy
US5379712A (en) * 1991-08-20 1995-01-10 Implant Sciences Corporation Method of epitaxially growing thin films using ion implantation
JPH0558785A (ja) * 1991-08-30 1993-03-09 Sumitomo Electric Ind Ltd ダイヤモンド膜及びその合成法
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
US5337844A (en) * 1992-07-16 1994-08-16 Baker Hughes, Incorporated Drill bit having diamond film cutting elements
US5334283A (en) * 1992-08-31 1994-08-02 The University Of North Carolina At Chapel Hill Process for selectively etching diamond
US5236545A (en) * 1992-10-05 1993-08-17 The Board Of Governors Of Wayne State University Method for heteroepitaxial diamond film development
US6099639A (en) * 1992-11-17 2000-08-08 National Semiconductor Corporation Method for solid-state formation of diamond
US5404835A (en) * 1993-09-29 1995-04-11 The United States Of America As Represented By The Secretary Of The Navy Method of making large area single crystalline diamond films
US5759623A (en) * 1995-09-14 1998-06-02 Universite De Montreal Method for producing a high adhesion thin film of diamond on a Fe-based substrate
US6904935B2 (en) * 2002-12-18 2005-06-14 Masco Corporation Of Indiana Valve component with multiple surface layers
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866343B2 (en) * 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US7866342B2 (en) * 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US20070026205A1 (en) * 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
JP6561402B2 (ja) * 2015-05-19 2019-08-21 国立大学法人金沢大学 ダイヤモンドの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1485364A (en) * 1974-09-27 1977-09-08 Nat Res Dev Production of synthetic diamonds
DD143070A1 (de) * 1979-04-23 1980-07-30 Klaus Bewilogua Verfahren zur erzeugung von diamantkristalliten
JPS6055480B2 (ja) * 1982-08-23 1985-12-05 住友電気工業株式会社 ダイヤモンドの気相合成法
JPS60103099A (ja) * 1983-11-04 1985-06-07 Kyocera Corp ダイヤモンド膜の製造方法
JPS60127298A (ja) * 1983-12-09 1985-07-06 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPS60195094A (ja) * 1984-03-15 1985-10-03 Agency Of Ind Science & Technol ダイヤモンド薄膜の製造方法
US4603082A (en) * 1985-04-29 1986-07-29 Rca Corporation Diamond-like film
JP2595203B2 (ja) * 1985-08-27 1997-04-02 東芝タンガロイ 株式会社 高密着性ダイヤモンド被覆焼結合金及びその製造方法
JPS62180071A (ja) * 1986-01-31 1987-08-07 Sumitomo Electric Ind Ltd 表面に透明硬質膜を有する貴金属製品
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
JPS63210099A (ja) * 1987-02-26 1988-08-31 Nissin Electric Co Ltd ダイヤモンド膜の作製方法
JPS63215578A (ja) * 1987-02-28 1988-09-08 株式会社豊田中央研究所 セラミツク材料表面への固体潤滑被膜の形成方法
JPH0623430B2 (ja) * 1987-07-13 1994-03-30 株式会社半導体エネルギ−研究所 炭素作製方法
US4816291A (en) * 1987-08-19 1989-03-28 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
JPH06247480A (ja) * 1993-02-23 1994-09-06 Fuji Gosei Kk 供給容器及びその成形方法

Also Published As

Publication number Publication date
DE69003557D1 (de) 1993-11-04
JPH03197388A (ja) 1991-08-28
DE69003557T2 (de) 1994-02-03
JP2529749B2 (ja) 1996-09-04
US4997636A (en) 1991-03-05
EP0384667A1 (en) 1990-08-29
EP0384667B1 (en) 1993-09-29

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