DE69003557T2 - Diamant-Züchtung. - Google Patents
Diamant-Züchtung.Info
- Publication number
- DE69003557T2 DE69003557T2 DE90301708T DE69003557T DE69003557T2 DE 69003557 T2 DE69003557 T2 DE 69003557T2 DE 90301708 T DE90301708 T DE 90301708T DE 69003557 T DE69003557 T DE 69003557T DE 69003557 T2 DE69003557 T2 DE 69003557T2
- Authority
- DE
- Germany
- Prior art keywords
- breeding
- diamond
- diamond breeding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ZA891207 | 1989-02-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69003557D1 DE69003557D1 (de) | 1993-11-04 |
DE69003557T2 true DE69003557T2 (de) | 1994-02-03 |
Family
ID=25579602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE90301708T Expired - Fee Related DE69003557T2 (de) | 1989-02-16 | 1990-02-16 | Diamant-Züchtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4997636A (de) |
EP (1) | EP0384667B1 (de) |
JP (1) | JP2529749B2 (de) |
DE (1) | DE69003557T2 (de) |
IL (1) | IL93399A (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252174A (en) * | 1989-06-19 | 1993-10-12 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing substrates for depositing diamond thin films |
US5273731A (en) * | 1989-09-14 | 1993-12-28 | General Electric Company | Substantially transparent free standing diamond films |
EP0459425A1 (de) * | 1990-05-30 | 1991-12-04 | Idemitsu Petrochemical Company Limited | Verfahren zur Herstellung von Diamanten |
US5221411A (en) * | 1991-04-08 | 1993-06-22 | North Carolina State University | Method for synthesis and processing of continuous monocrystalline diamond thin films |
US5298106A (en) * | 1991-07-08 | 1994-03-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of doping single crystal diamond for electronic devices |
US5176788A (en) * | 1991-07-08 | 1993-01-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of joining diamond structures |
US5429069A (en) * | 1991-07-11 | 1995-07-04 | Fang; Pao-Hsien | Method for growing diamond crystals utilizing a diffusion fed epitaxy |
US5379712A (en) * | 1991-08-20 | 1995-01-10 | Implant Sciences Corporation | Method of epitaxially growing thin films using ion implantation |
JPH0558785A (ja) * | 1991-08-30 | 1993-03-09 | Sumitomo Electric Ind Ltd | ダイヤモンド膜及びその合成法 |
US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
US5337844A (en) * | 1992-07-16 | 1994-08-16 | Baker Hughes, Incorporated | Drill bit having diamond film cutting elements |
US5334283A (en) * | 1992-08-31 | 1994-08-02 | The University Of North Carolina At Chapel Hill | Process for selectively etching diamond |
US5236545A (en) * | 1992-10-05 | 1993-08-17 | The Board Of Governors Of Wayne State University | Method for heteroepitaxial diamond film development |
US6099639A (en) * | 1992-11-17 | 2000-08-08 | National Semiconductor Corporation | Method for solid-state formation of diamond |
US5404835A (en) * | 1993-09-29 | 1995-04-11 | The United States Of America As Represented By The Secretary Of The Navy | Method of making large area single crystalline diamond films |
US5759623A (en) * | 1995-09-14 | 1998-06-02 | Universite De Montreal | Method for producing a high adhesion thin film of diamond on a Fe-based substrate |
US7866343B2 (en) * | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
US6904935B2 (en) * | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
US7866342B2 (en) * | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
US20070026205A1 (en) * | 2005-08-01 | 2007-02-01 | Vapor Technologies Inc. | Article having patterned decorative coating |
JP6561402B2 (ja) * | 2015-05-19 | 2019-08-21 | 国立大学法人金沢大学 | ダイヤモンドの製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1485364A (en) * | 1974-09-27 | 1977-09-08 | Nat Res Dev | Production of synthetic diamonds |
DD143070A1 (de) * | 1979-04-23 | 1980-07-30 | Klaus Bewilogua | Verfahren zur erzeugung von diamantkristalliten |
JPS6055480B2 (ja) * | 1982-08-23 | 1985-12-05 | 住友電気工業株式会社 | ダイヤモンドの気相合成法 |
JPS60103099A (ja) * | 1983-11-04 | 1985-06-07 | Kyocera Corp | ダイヤモンド膜の製造方法 |
JPS60127298A (ja) * | 1983-12-09 | 1985-07-06 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
JPS60195094A (ja) * | 1984-03-15 | 1985-10-03 | Agency Of Ind Science & Technol | ダイヤモンド薄膜の製造方法 |
US4603082A (en) * | 1985-04-29 | 1986-07-29 | Rca Corporation | Diamond-like film |
JP2595203B2 (ja) * | 1985-08-27 | 1997-04-02 | 東芝タンガロイ 株式会社 | 高密着性ダイヤモンド被覆焼結合金及びその製造方法 |
JPS62180071A (ja) * | 1986-01-31 | 1987-08-07 | Sumitomo Electric Ind Ltd | 表面に透明硬質膜を有する貴金属製品 |
KR900008505B1 (ko) * | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | 탄소 석출을 위한 마이크로파 강화 cvd 방법 |
JPS63210099A (ja) * | 1987-02-26 | 1988-08-31 | Nissin Electric Co Ltd | ダイヤモンド膜の作製方法 |
JPS63215578A (ja) * | 1987-02-28 | 1988-09-08 | 株式会社豊田中央研究所 | セラミツク材料表面への固体潤滑被膜の形成方法 |
JPH0623430B2 (ja) * | 1987-07-13 | 1994-03-30 | 株式会社半導体エネルギ−研究所 | 炭素作製方法 |
US4816291A (en) * | 1987-08-19 | 1989-03-28 | The Regents Of The University Of California | Process for making diamond, doped diamond, diamond-cubic boron nitride composite films |
US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
JPH06247480A (ja) * | 1993-02-23 | 1994-09-06 | Fuji Gosei Kk | 供給容器及びその成形方法 |
-
1990
- 1990-02-14 IL IL9339990A patent/IL93399A/en not_active IP Right Cessation
- 1990-02-15 US US07/482,457 patent/US4997636A/en not_active Expired - Lifetime
- 1990-02-16 JP JP2036010A patent/JP2529749B2/ja not_active Expired - Lifetime
- 1990-02-16 EP EP90301708A patent/EP0384667B1/de not_active Expired - Lifetime
- 1990-02-16 DE DE90301708T patent/DE69003557T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03197388A (ja) | 1991-08-28 |
JP2529749B2 (ja) | 1996-09-04 |
DE69003557D1 (de) | 1993-11-04 |
IL93399A (en) | 1994-06-24 |
US4997636A (en) | 1991-03-05 |
EP0384667B1 (de) | 1993-09-29 |
EP0384667A1 (de) | 1990-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |