IL89632A - High sensitivity mid and deep uv resist - Google Patents

High sensitivity mid and deep uv resist

Info

Publication number
IL89632A
IL89632A IL89632A IL8963289A IL89632A IL 89632 A IL89632 A IL 89632A IL 89632 A IL89632 A IL 89632A IL 8963289 A IL8963289 A IL 8963289A IL 89632 A IL89632 A IL 89632A
Authority
IL
Israel
Prior art keywords
resist
deep
high sensitivity
mid
sensitivity mid
Prior art date
Application number
IL89632A
Other languages
English (en)
Other versions
IL89632A0 (en
Inventor
Michael Lazarus Richard
Joseph Reardon Edward
Suresh Dixit Sunit
Original Assignee
Thiokol Morton Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thiokol Morton Inc filed Critical Thiokol Morton Inc
Publication of IL89632A0 publication Critical patent/IL89632A0/xx
Publication of IL89632A publication Critical patent/IL89632A/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
IL89632A 1988-03-31 1989-03-16 High sensitivity mid and deep uv resist IL89632A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17570688A 1988-03-31 1988-03-31
US22908888A 1988-08-05 1988-08-05

Publications (2)

Publication Number Publication Date
IL89632A0 IL89632A0 (en) 1989-09-10
IL89632A true IL89632A (en) 1993-01-31

Family

ID=26871494

Family Applications (1)

Application Number Title Priority Date Filing Date
IL89632A IL89632A (en) 1988-03-31 1989-03-16 High sensitivity mid and deep uv resist

Country Status (8)

Country Link
EP (1) EP0336605B1 (da)
JP (1) JPH0778627B2 (da)
KR (1) KR940001550B1 (da)
AU (1) AU3127689A (da)
DE (1) DE68909084T2 (da)
DK (1) DK155289A (da)
IL (1) IL89632A (da)
NO (1) NO891062L (da)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110462A (ja) * 1988-06-21 1990-04-23 Mitsubishi Kasei Corp ポジ型フォトレジスト
JPH04328747A (ja) * 1991-03-27 1992-11-17 Internatl Business Mach Corp <Ibm> 均一にコートされたフォトレジスト組成物
KR100341563B1 (ko) * 1992-03-23 2002-10-25 제이에스알 가부시끼가이샤 레지스트도포조성물
DE4209343A1 (de) * 1992-03-23 1993-09-30 Hoechst Ag 1,2-Naphthochinon-2-diazid-sulfonsäureester, damit hergestelltes strahlungsempfindliches Gemisch und strahlungsempfindliches Aufzeichnungsmaterial
US5612164A (en) * 1995-02-09 1997-03-18 Hoechst Celanese Corporation Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone
KR100363273B1 (ko) * 2000-07-29 2002-12-05 주식회사 동진쎄미켐 액정표시장치 회로용 포토레지스트 조성물
KR101324645B1 (ko) * 2006-05-08 2013-11-01 주식회사 동진쎄미켐 포토레지스트 조성물
JP2017088675A (ja) * 2015-11-05 2017-05-25 Dic株式会社 ノボラック型フェノール性水酸基含有樹脂及びレジスト材料

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3274354D1 (en) * 1981-06-22 1987-01-08 Hunt Chem Corp Philip A Novolak resin and a positive photoresist composition containing the same
JPS5817112A (ja) * 1981-06-22 1983-02-01 フイリツプ・エイ・ハント・ケミカル・コ−ポレイシヨン ポジ型ノボラツクホトレジスト組成物及びその調製物
DE3220816A1 (de) * 1982-06-03 1983-12-08 Merck Patent Gmbh, 6100 Darmstadt Lichtempfindliche komponenten fuer positiv arbeitende fotoresistmaterialien
JPH0658529B2 (ja) * 1983-08-17 1994-08-03 三菱化成株式会社 ポジ型クレゾ−ルノボラツクフオトレジスト組成物
JPS61141441A (ja) * 1984-12-14 1986-06-28 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
US4626492A (en) * 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
JPS62123444A (ja) * 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
JPS63184745A (ja) * 1987-01-27 1988-07-30 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物

Also Published As

Publication number Publication date
KR900003680A (ko) 1990-03-26
AU3127689A (en) 1989-10-05
KR940001550B1 (ko) 1994-02-24
EP0336605A3 (en) 1990-07-25
DE68909084T2 (de) 1994-01-13
JPH0778627B2 (ja) 1995-08-23
EP0336605B1 (en) 1993-09-15
NO891062L (no) 1989-10-02
EP0336605A2 (en) 1989-10-11
IL89632A0 (en) 1989-09-10
NO891062D0 (no) 1989-03-13
DK155289A (da) 1989-10-01
DE68909084D1 (de) 1993-10-21
DK155289D0 (da) 1989-03-30
JPH0210348A (ja) 1990-01-16

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