IL266966A - שיטה וייצור של חומרים נמוך–מימדיים התומכים בתרמיזציה עצמית ובלוקליזיה עצמית - Google Patents
שיטה וייצור של חומרים נמוך–מימדיים התומכים בתרמיזציה עצמית ובלוקליזיה עצמיתInfo
- Publication number
- IL266966A IL266966A IL266966A IL26696619A IL266966A IL 266966 A IL266966 A IL 266966A IL 266966 A IL266966 A IL 266966A IL 26696619 A IL26696619 A IL 26696619A IL 266966 A IL266966 A IL 266966A
- Authority
- IL
- Israel
- Prior art keywords
- self
- thermalization
- localization
- manufacture
- low
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Particle Accelerators (AREA)
- Photovoltaic Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2016/063933 WO2018101905A1 (en) | 2016-11-29 | 2016-11-29 | Composition and method for making picocrystalline artificial borane atoms |
| US201762471815P | 2017-03-15 | 2017-03-15 | |
| US201762591848P | 2017-11-29 | 2017-11-29 | |
| PCT/US2017/064020 WO2018164746A2 (en) | 2016-11-29 | 2017-11-30 | Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IL266966A true IL266966A (he) | 2019-07-31 |
| IL266966B1 IL266966B1 (he) | 2023-11-01 |
| IL266966B2 IL266966B2 (he) | 2024-03-01 |
Family
ID=68407930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL266966A IL266966B2 (he) | 2016-11-29 | 2017-11-30 | שיטה וייצור של חומרים נמוך–מימדיים התומכים בתרמיזציה עצמית ובלוקליזיה עצמית |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP3549155A4 (he) |
| JP (1) | JP7250340B2 (he) |
| KR (1) | KR102373619B1 (he) |
| CN (1) | CN110431652B (he) |
| CA (1) | CA3045318A1 (he) |
| IL (1) | IL266966B2 (he) |
| WO (1) | WO2018164746A2 (he) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11220747B2 (en) * | 2018-10-29 | 2022-01-11 | Applied Materials, Inc. | Complementary pattern station designs |
| CN111470577A (zh) * | 2020-04-15 | 2020-07-31 | 苏州正奥水生态技术研究有限公司 | 一种污水处理光量子载体及其制备方法和使用方法 |
| CN115903279B (zh) * | 2022-10-12 | 2023-10-03 | 北京大学 | 一种基于同位素工程进行光谱发射率调控的方法及其应用 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3432539A (en) * | 1965-06-30 | 1969-03-11 | Du Pont | Icosahedral dodecahydrododecaborane derivatives and their preparation |
| US4818625A (en) * | 1985-06-24 | 1989-04-04 | Lockheed Missiles & Space Company, Inc. | Boron-silicon-hydrogen alloy films |
| US5872368A (en) * | 1995-11-30 | 1999-02-16 | The United States Of America As Represented By The Secretary Of The Navy | Method of controlling a super conductor |
| US6025611A (en) * | 1996-09-20 | 2000-02-15 | The Board Of Regents Of The University Of Nebraska | Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes |
| US6479919B1 (en) * | 2001-04-09 | 2002-11-12 | Terrence L. Aselage | Beta cell device using icosahedral boride compounds |
| JP2004123720A (ja) * | 2002-09-11 | 2004-04-22 | Sony Corp | 分子素子、分子組織体、整流素子、整流方法、センサ素子、スイッチ素子、回路素子、論理回路素子、演算素子および情報処理素子 |
| KR100683401B1 (ko) * | 2005-08-11 | 2007-02-15 | 동부일렉트로닉스 주식회사 | 에피층을 이용한 반도체 장치 및 그 제조방법 |
| US7795735B2 (en) * | 2007-03-21 | 2010-09-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom |
| US7915643B2 (en) * | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
| US8779462B2 (en) * | 2008-05-19 | 2014-07-15 | Infineon Technologies Ag | High-ohmic semiconductor substrate and a method of manufacturing the same |
| CN102301490A (zh) * | 2009-06-10 | 2011-12-28 | 薄膜硅公司 | 光生伏打模块和制造具有级联半导体层堆叠的光生伏打模块的方法 |
| US8344337B2 (en) * | 2010-04-21 | 2013-01-01 | Axcelis Technologies, Inc. | Silaborane implantation processes |
| KR101396432B1 (ko) * | 2012-08-02 | 2014-05-21 | 경희대학교 산학협력단 | 반도체 소자 및 그의 제조 방법 |
| JP6544807B2 (ja) * | 2014-06-03 | 2019-07-17 | 株式会社日本製鋼所 | ゲッタリング層を持つ半導体の製造方法、半導体装置の製造方法および半導体装置 |
| US9972489B2 (en) * | 2015-05-28 | 2018-05-15 | SemiNuclear, Inc. | Composition and method for making picocrystalline artificial borane atoms |
| US20160351286A1 (en) * | 2015-05-28 | 2016-12-01 | SemiNuclear, Inc. | Composition and method for making picocrystalline artificial carbon atoms |
-
2017
- 2017-11-30 KR KR1020197018946A patent/KR102373619B1/ko active Active
- 2017-11-30 CN CN201780084888.3A patent/CN110431652B/zh active Active
- 2017-11-30 JP JP2019548545A patent/JP7250340B2/ja active Active
- 2017-11-30 WO PCT/US2017/064020 patent/WO2018164746A2/en not_active Ceased
- 2017-11-30 IL IL266966A patent/IL266966B2/he unknown
- 2017-11-30 EP EP17899703.7A patent/EP3549155A4/en active Pending
- 2017-11-30 CA CA3045318A patent/CA3045318A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR102373619B1 (ko) | 2022-03-15 |
| IL266966B1 (he) | 2023-11-01 |
| EP3549155A2 (en) | 2019-10-09 |
| JP7250340B2 (ja) | 2023-04-03 |
| KR20190126765A (ko) | 2019-11-12 |
| CN110431652B (zh) | 2023-12-29 |
| EP3549155A4 (en) | 2020-09-30 |
| WO2018164746A2 (en) | 2018-09-13 |
| CA3045318A1 (en) | 2018-09-13 |
| IL266966B2 (he) | 2024-03-01 |
| CN110431652A (zh) | 2019-11-08 |
| JP2020515057A (ja) | 2020-05-21 |
| WO2018164746A3 (en) | 2018-12-06 |
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