WO2018164746A3 - Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization - Google Patents

Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization Download PDF

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Publication number
WO2018164746A3
WO2018164746A3 PCT/US2017/064020 US2017064020W WO2018164746A3 WO 2018164746 A3 WO2018164746 A3 WO 2018164746A3 US 2017064020 W US2017064020 W US 2017064020W WO 2018164746 A3 WO2018164746 A3 WO 2018164746A3
Authority
WO
WIPO (PCT)
Prior art keywords
self
thermalization
localization
manufacture
low
Prior art date
Application number
PCT/US2017/064020
Other languages
French (fr)
Other versions
WO2018164746A2 (en
Inventor
Patrick Curran
Original Assignee
SemiNuclear, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2016/063933 external-priority patent/WO2018101905A1/en
Priority to RU2019120212A priority Critical patent/RU2756481C2/en
Priority to EP17899703.7A priority patent/EP3549155A4/en
Priority to CN201780084888.3A priority patent/CN110431652B/en
Priority to MX2019006280A priority patent/MX2019006280A/en
Priority to IL266966A priority patent/IL266966B2/en
Application filed by SemiNuclear, Inc. filed Critical SemiNuclear, Inc.
Priority to KR1020197018946A priority patent/KR102373619B1/en
Priority to CA3045318A priority patent/CA3045318A1/en
Priority to JP2019548545A priority patent/JP7250340B2/en
Publication of WO2018164746A2 publication Critical patent/WO2018164746A2/en
Publication of WO2018164746A3 publication Critical patent/WO2018164746A3/en
Priority to US16/425,582 priority patent/US11651957B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Particle Accelerators (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Various articles and devices can be manufactured to take advantage of what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.
PCT/US2017/064020 2015-05-28 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization WO2018164746A2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2019548545A JP7250340B2 (en) 2017-03-15 2017-11-30 Processing and fabrication of low-dimensional materials that support both self-thermalization and self-localization
EP17899703.7A EP3549155A4 (en) 2017-03-15 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
CN201780084888.3A CN110431652B (en) 2017-03-15 2017-11-30 Processing and fabrication of low dimensional materials supporting self-thermalization and self-positioning
MX2019006280A MX2019006280A (en) 2016-11-29 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization.
IL266966A IL266966B2 (en) 2016-11-29 2017-11-30 Process and Manufacture of Low-Dimensional Materials Supporting Both Self-Thermalization and Self-Localization
RU2019120212A RU2756481C2 (en) 2016-11-29 2017-11-30 Technology and production of low-dimensional material that supports both self-thermalization and self-localization
KR1020197018946A KR102373619B1 (en) 2017-03-15 2017-11-30 Process and manufacture of low-dimensional materials that support both self-thermal neutronization and self-localization
CA3045318A CA3045318A1 (en) 2016-11-29 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
US16/425,582 US11651957B2 (en) 2015-05-28 2019-05-29 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
PCT/US2016/063933 WO2018101905A1 (en) 2016-11-29 2016-11-29 Composition and method for making picocrystalline artificial borane atoms
USPCT/US2016/063933 2016-11-29
US201762471815P 2017-03-15 2017-03-15
US62/471,815 2017-03-15
US201762591848P 2017-11-29 2017-11-29
US62/591,848 2017-11-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2016/063933 Continuation-In-Part WO2018101905A1 (en) 2015-05-28 2016-11-29 Composition and method for making picocrystalline artificial borane atoms

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US15/959,463 Continuation US11521853B2 (en) 2015-05-28 2018-04-23 Composition and method for making picocrystalline artificial borane atoms
US16/425,582 Continuation US11651957B2 (en) 2015-05-28 2019-05-29 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Publications (2)

Publication Number Publication Date
WO2018164746A2 WO2018164746A2 (en) 2018-09-13
WO2018164746A3 true WO2018164746A3 (en) 2018-12-06

Family

ID=68407930

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2017/064020 WO2018164746A2 (en) 2015-05-28 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Country Status (7)

Country Link
EP (1) EP3549155A4 (en)
JP (1) JP7250340B2 (en)
KR (1) KR102373619B1 (en)
CN (1) CN110431652B (en)
CA (1) CA3045318A1 (en)
IL (1) IL266966B2 (en)
WO (1) WO2018164746A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111470577A (en) * 2020-04-15 2020-07-31 苏州正奥水生态技术研究有限公司 Sewage treatment photon carrier and preparation method and use method thereof
CN115903279B (en) * 2022-10-12 2023-10-03 北京大学 Method for regulating and controlling spectral emissivity based on isotope engineering and application thereof

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US20100313952A1 (en) * 2009-06-10 2010-12-16 Thinsilicion Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
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US8633518B2 (en) * 2007-09-17 2014-01-21 Transphorm Inc. Gallium nitride power devices
US20140291809A1 (en) * 2008-05-19 2014-10-02 Infineon Technologies Ag Semiconductor Substrate and a Method of Manufacturing the Same
WO2015186625A1 (en) * 2014-06-03 2015-12-10 株式会社日本製鋼所 Method for producing semiconductor having gettering layer, method for manufacturing semiconductor device, and semiconductor device
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KR101396432B1 (en) * 2012-08-02 2014-05-21 경희대학교 산학협력단 Semiconductor device and method for fabricating the same

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US4818625A (en) * 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US5872368A (en) * 1995-11-30 1999-02-16 The United States Of America As Represented By The Secretary Of The Navy Method of controlling a super conductor
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US7148523B2 (en) * 2002-09-11 2006-12-12 Sony Corporation Molecular rectifier device
US20070037360A1 (en) * 2005-08-11 2007-02-15 Dongbu Electronics Co., Ltd. Semiconductor device using EPI-layer and method of forming the same
US7795735B2 (en) * 2007-03-21 2010-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US8633518B2 (en) * 2007-09-17 2014-01-21 Transphorm Inc. Gallium nitride power devices
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US20110260047A1 (en) * 2010-04-21 2011-10-27 Axcelis Technologies, Inc. Silaborane implantation processes
WO2015186625A1 (en) * 2014-06-03 2015-12-10 株式会社日本製鋼所 Method for producing semiconductor having gettering layer, method for manufacturing semiconductor device, and semiconductor device
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Also Published As

Publication number Publication date
CN110431652B (en) 2023-12-29
JP7250340B2 (en) 2023-04-03
WO2018164746A2 (en) 2018-09-13
CA3045318A1 (en) 2018-09-13
EP3549155A4 (en) 2020-09-30
EP3549155A2 (en) 2019-10-09
IL266966B1 (en) 2023-11-01
CN110431652A (en) 2019-11-08
IL266966A (en) 2019-07-31
KR20190126765A (en) 2019-11-12
KR102373619B1 (en) 2022-03-15
IL266966B2 (en) 2024-03-01
JP2020515057A (en) 2020-05-21

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