EP3549155A4 - Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization - Google Patents

Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization Download PDF

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Publication number
EP3549155A4
EP3549155A4 EP17899703.7A EP17899703A EP3549155A4 EP 3549155 A4 EP3549155 A4 EP 3549155A4 EP 17899703 A EP17899703 A EP 17899703A EP 3549155 A4 EP3549155 A4 EP 3549155A4
Authority
EP
European Patent Office
Prior art keywords
self
thermalization
localization
manufacture
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17899703.7A
Other languages
German (de)
French (fr)
Other versions
EP3549155A2 (en
Inventor
Patrick Curran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seminuclear Inc
Original Assignee
Seminuclear Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seminuclear Inc filed Critical Seminuclear Inc
Publication of EP3549155A2 publication Critical patent/EP3549155A2/en
Publication of EP3549155A4 publication Critical patent/EP3549155A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Particle Accelerators (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
EP17899703.7A 2017-03-15 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization Pending EP3549155A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762471815P 2017-03-15 2017-03-15
US201762591848P 2017-11-29 2017-11-29
PCT/US2017/064020 WO2018164746A2 (en) 2016-11-29 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Publications (2)

Publication Number Publication Date
EP3549155A2 EP3549155A2 (en) 2019-10-09
EP3549155A4 true EP3549155A4 (en) 2020-09-30

Family

ID=68407930

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17899703.7A Pending EP3549155A4 (en) 2017-03-15 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Country Status (7)

Country Link
EP (1) EP3549155A4 (en)
JP (1) JP7250340B2 (en)
KR (1) KR102373619B1 (en)
CN (1) CN110431652B (en)
CA (1) CA3045318A1 (en)
IL (1) IL266966B2 (en)
WO (1) WO2018164746A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111470577A (en) * 2020-04-15 2020-07-31 苏州正奥水生态技术研究有限公司 Sewage treatment photon carrier and preparation method and use method thereof
CN115903279B (en) * 2022-10-12 2023-10-03 北京大学 Method for regulating and controlling spectral emissivity based on isotope engineering and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6479919B1 (en) * 2001-04-09 2002-11-12 Terrence L. Aselage Beta cell device using icosahedral boride compounds
US20150206940A1 (en) * 2012-08-02 2015-07-23 University-Industry Cooperation Group Of Kyung Hee University Semiconductor device and method for producing same
US20160351286A1 (en) * 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms

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US3432539A (en) * 1965-06-30 1969-03-11 Du Pont Icosahedral dodecahydrododecaborane derivatives and their preparation
US4818625A (en) * 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US5872368A (en) * 1995-11-30 1999-02-16 The United States Of America As Represented By The Secretary Of The Navy Method of controlling a super conductor
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
JP2004123720A (en) * 2002-09-11 2004-04-22 Sony Corp Molecular element, molecular organism, rectifier element, method for rectifying, sensor element, switching element, circuit element, logic circuit element, computing element, and information processing element
KR100683401B1 (en) * 2005-08-11 2007-02-15 동부일렉트로닉스 주식회사 Semiconductor device using epi-layer and method of forming the same
US7795735B2 (en) * 2007-03-21 2010-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US8779462B2 (en) * 2008-05-19 2014-07-15 Infineon Technologies Ag High-ohmic semiconductor substrate and a method of manufacturing the same
JP2012523716A (en) * 2009-06-10 2012-10-04 シンシリコン・コーポレーション Photovoltaic module and method for producing photovoltaic module having multiple semiconductor layer stacks
US8344337B2 (en) * 2010-04-21 2013-01-01 Axcelis Technologies, Inc. Silaborane implantation processes
WO2015186625A1 (en) * 2014-06-03 2015-12-10 株式会社日本製鋼所 Method for producing semiconductor having gettering layer, method for manufacturing semiconductor device, and semiconductor device
US9972489B2 (en) * 2015-05-28 2018-05-15 SemiNuclear, Inc. Composition and method for making picocrystalline artificial borane atoms

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6479919B1 (en) * 2001-04-09 2002-11-12 Terrence L. Aselage Beta cell device using icosahedral boride compounds
US20150206940A1 (en) * 2012-08-02 2015-07-23 University-Industry Cooperation Group Of Kyung Hee University Semiconductor device and method for producing same
US20160351286A1 (en) * 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
COREY MELNICK ET AL: "Phonovoltaic. I. Harvesting hot optical phonons in a nanoscale p - n junction", PHYSICAL REVIEW B, vol. 93, no. 9, 4 March 2016 (2016-03-04), XP055690570, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.094302 *
JING LIU ET AL: "The local structure of transition metal doped semiconducting boron carbides", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, vol. 43, no. 8, 3 March 2010 (2010-03-03), pages 85403, XP020171369, ISSN: 0022-3727 *
KUMAR VOBULAPURAM RAMESH ET AL: "Graphene Based On-Chip Interconnects and TSVs : Prospects and Challenges", IEEE NANOTECHNOLOGY MAGAZINE, IEEE, USA, vol. 8, no. 4, 1 December 2014 (2014-12-01), pages 14 - 20, XP011564671, ISSN: 1932-4510, [retrieved on 20141118], DOI: 10.1109/MNANO.2014.2355275 *
NAN LIU ET AL: "Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene", NANO LETTERS, vol. 14, no. 7, 9 July 2014 (2014-07-09), US, pages 3702 - 3708, XP055723189, ISSN: 1530-6984, DOI: 10.1021/nl500443j *
S. YU. RYBAKOV ET AL: "Oxygen Effect on the Stability of PECVD Boron-Carbon Films", JOURNAL DE PHYSIQUE IV, vol. 05, no. C5, 1 June 1995 (1995-06-01), FR, pages C5 - 921, XP055689624, ISSN: 1155-4339, DOI: 10.1051/jphyscol:19955109 *
SHIOYA HIROKI ET AL: "Gate tunable non-linear currents in bilayer graphene diodes", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 100, no. 3, 16 January 2012 (2012-01-16), pages 33113 - 33113, XP012156888, ISSN: 0003-6951, [retrieved on 20120118], DOI: 10.1063/1.3676441 *
YI ZHANG: "Epitaxial growth of icosahedral boron arsenide on silicon carbide substrates: Improved process conditions and electrical properties", DISSERTATION, 1 January 2011 (2011-01-01), XP055554015, ISBN: 978-1-267-14614-4, Retrieved from the Internet <URL:http://krex.k-state.edu/dspace/bitstream/handle/2097/13122/YiZhang2011.pdf?sequence=3&isAllowed=y> [retrieved on 20190208] *

Also Published As

Publication number Publication date
KR102373619B1 (en) 2022-03-15
IL266966B2 (en) 2024-03-01
JP7250340B2 (en) 2023-04-03
CN110431652B (en) 2023-12-29
IL266966B1 (en) 2023-11-01
CA3045318A1 (en) 2018-09-13
JP2020515057A (en) 2020-05-21
WO2018164746A3 (en) 2018-12-06
KR20190126765A (en) 2019-11-12
IL266966A (en) 2019-07-31
CN110431652A (en) 2019-11-08
WO2018164746A2 (en) 2018-09-13
EP3549155A2 (en) 2019-10-09

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