CN115903279B - Method for regulating and controlling spectral emissivity based on isotope engineering and application thereof - Google Patents
Method for regulating and controlling spectral emissivity based on isotope engineering and application thereof Download PDFInfo
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Abstract
The invention relates to a method for regulating and controlling spectral emissivity based on isotope engineering and application thereof, comprising the following isotope engineering optimization design is carried out on at least one component of a device to be regulated and controlled: and the interaction process of the material light and the substance of the component is regulated by utilizing different isotope ratios so as to achieve the target spectral emission parameter. The method is suitable for devices such as thermal diodes, thermal switches, thermal photovoltaic cells, infrared detectors and the like which emit heat, infrared detectors and the like so as to need to regulate and control the spectral emissivity. In addition, the method can be combined with other mechanisms to perform controllable optimal design on target parameters, so that the overall physical property of the material in multiple dimensions and multiple dimensions is improved, the design of a selective emitter with cost effectiveness, wafer scale and no photoetching is facilitated, and a new design thought and method are provided for device development in various fields such as infrared detection, thermal radiation regulation and control, radiation refrigeration and the like.
Description
Technical Field
The invention relates to the technical field of emission spectrum regulation and control, in particular to a method for regulating and controlling spectral emissivity based on isotope engineering and application thereof.
Background
Emission spectrum regulation is of great importance in many fields. Whether infrared detection, optical sensing, or thermal radiation modulation devices, the information or energy transfer and control is primarily based on interactions between the detection object (material) and photons. If the wave band where the interaction of the material and photons generates the most sensitive reaction is in the spectrum range with the optimal system working performance, the performance of the corresponding device is greatly improved, which is also the main target of emission spectrum regulation.
However, although the application value of the device can be greatly improved through emission spectrum regulation, most of the current main design methods have higher challenges. Most of the selective emitters capable of performing emission spectrum regulation and control require a pattern nano structure, a great parameter selection space exists in the design process, the spectral responses of different structures cannot be described by a simple analysis relation, and high-cost and low-flux global searching is required. In addition, these complex device structures require photolithography during fabrication, and device performance is highly dependent on the quality of the patterned structure, with poor repeatability and stability, and thus unsuitable for many applications.
For example, as the radiant heat diode structure which needs to select and design the spectrum based on the local electromagnetic state density screening principle at present, the structural design of a band-pass filter or a nonlinear thermal end is often needed through a grating, a super surface and the like, so that not only is the existing performance greatly improved, but also the proposed key parameters such as the thickness of the optimized structural material, the structural feature size and the like are very sensitive to the process during actual production, and the application space of the structural material is greatly limited. In addition, even though the theoretical efficiency of the existing researches can be almost comparable to that of the photovoltaic cells, as the efficiency and the output power density of the thermophotovoltaic structure are very sensitive to the emission spectrum of the emitter, the efficiency which can be realized in experiments at present is still limited because most designs need emitters with complex structures to realize the spectral emissivity matched with the bandwidth of the photovoltaic cells, which puts high requirements on the spectral selectivity of the emitter and the preparation of the material structure.
In summary, in order to better realize the regulation and control of the spectral emissivity of a material or a device, a person skilled in the art hopes to develop a new technical scheme for regulating and controlling the spectral emissivity so as to effectively improve the performance of related devices in the fields of infrared detection, thermal radiation technology and the like and expand the application space of the devices.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a method for regulating and controlling the spectral emissivity based on isotope engineering and application thereof, and the method applies the simple analytic relations of different isotope proportions and material and photon responses in the materials which are used by fresh people to the spectral design of different types of devices for the first time.
Isotopes were first proposed by Soddy in 1910 for the study of radioactivity. Some elements have high isotopic purity, while others contain more than ten isotopes. Currently, there are about 300 stable isotopes and about 1000 radioisotope. Starting from classical theory of the influence of isotopes on crystal lattice, with the continuous development of isotope separation technology, production and preparation of high-purity or controllable isotope ratio materials are gradually possible, and many students develop crystal physical property researches with various isotope compositions, which make it possible to regulate spectral emissivity by utilizing isotope engineering.
Studies have shown that isotopes can have a significant impact on a variety of physical properties of materials, and this effect is particularly pronounced in solids. The difference in zero-point vibrational energy of different isotopes can result in a frequency shift of the pure electronic transitions of molecules of different isotopic composition, such as when hydrogen (H) in lithium hydride (LiH) crystals is replaced by deuterium (D) as its isotope, the electron transition energy is two orders of magnitude greater than in hydrogen atoms. On the other hand, in the aspect of interaction of crystal lattices to external photons, if only isotope mass change is considered, the mixed system accords with a virtual crystal approximation model, and according to the relation between lattice vibration and the inverse of mass, a simple linear relation exists between lattice dynamics property and isotope concentration, and the property is directly reflected on frequency shift of a spectrum peak of an isotope composition crystal. Meanwhile, with the addition of different isotopes, when the distribution of the isotopes is most disordered, the isotope-isotope scattering of phonons in the material gradually takes the dominant role, so that the service life of the phonons is greatly reduced, the damping coefficient of the material is increased when the material acts with photons, and the emission spectrum is widened.
The main idea of the invention is to utilize the influence rules of different isotope ratios on the spectrum of the material so as to realize the regulation and control of the light emissivity, thereby effectively and greatly improving the performance of the device.
To this end, the invention provides a method for spectral emissivity regulation based on isotope engineering, which comprises the steps of carrying out isotope engineering optimization design on at least one component of a device to be regulated, wherein the isotope engineering optimization design comprises the following steps: and the interaction process of the material light and the substance of the component is regulated by utilizing different isotope ratios so as to achieve the target spectral emission parameter, thereby realizing the regulation and control of the spectral emissivity of the device to be regulated.
In some embodiments, the process of adjusting the interaction of the material light and the substance by using different isotope ratios specifically comprises the following steps: by using different isotope ratios, the dielectric function of the interaction of the material light and the substance is changed, so that the absorption and emission characteristics of the material on photons are adjusted.
In some embodiments, the device to be modulated is selected from a radiant thermal diode, a thermal switch, a thermophotovoltaic system, an infrared detector, and the like.
In some embodiments, the device to be regulated is a bolometric diode comprising a nonlinear thermal end and a bandpass filter end arranged opposite to each other; the method for regulating and controlling the spectral emissivity comprises the following steps: the spectral emissivity is regulated and controlled by changing the isotope ratio in the material of the band-pass filter end.
In some embodiments, the material of the band-pass filter end is cubic boron nitride (cBN), and the spectral emissivity is regulated by changing the proportion of boron isotopes in the material of the band-pass filter end.
In some embodiments, the nonlinear thermal end material is a phase change material VO 2 。
In some embodiments, the device to be regulated is a thermophotovoltaic system comprising a high temperature heat source, a high temperature emitter, and a photovoltaic cell; the method for regulating and controlling the spectral emissivity comprises the following steps: the spectral emissivity is regulated and controlled by changing the isotope ratio in the material of the high-temperature emitter.
In some embodiments, the material of the high temperature emitter is highly doped silicon, and the spectral emissivity is regulated by changing the silicon isotope ratio in the material of the high temperature emitter.
In some embodiments, the working spectrum range of the device to be regulated includes a far infrared spectrum range, a mid infrared spectrum range, a near infrared spectrum range, a visible spectrum range, a near ultraviolet spectrum range, and an ultraviolet spectrum range.
In some embodiments, the components are made of materials with different stable isotope ratios, and/or support surface wave excitation.
Those skilled in the art know that stable isotopes refer to isotopes that have no radioactivity or have a half-life of radioactivity greater than 1015 years.
In some embodiments, the component is made of a material that supports surface wave excitation.
In some embodiments, the component is made of a polar dielectric, metal, or semiconductor.
In some embodiments, the method of spectral emission modulation comprises: determining a target spectral range of the device to be regulated and controlled according to the operation condition, and selecting spectral emission characteristics of different isotope ratio materials of at least one component of the device to be regulated and controlled according to any one or any combination of indexes of the response spectral range, the peak frequency and the full width at half maximum, so as to determine the isotope ratio of the target; in the process of preparing the component, the isotope ratio of the target is realized by controlling the proportions of different isotope sources when the material film is deposited, so that the regulation and control of the physical properties of the material are realized.
According to the technical scheme of the invention, the regulation and control of the spectral emissivity can be realized without complex steps such as photoetching, surface graphical design and the like.
In some embodiments, the method of spectral emissivity modulation further comprises: adopting an auxiliary means to carry out collaborative design; the auxiliary means comprise element doping, voltage modulation, structural design and the like.
Although the spectrum emissivity can be regulated and controlled by using isotope engineering optimization design alone, the technical scheme of the invention also allows other auxiliary means to be adopted at the same time, thereby realizing the overall physical property improvement of the material in multiple dimensions and multiple dimensions.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) The design method for regulating and controlling the spectral emissivity based on the isotope engineering provided by the invention applies the simple analytic relations of different isotope proportions and material and photon responses in the materials which are used by fresh people to the spectral design of different types of devices for the first time.
(2) The method for regulating and controlling the spectral emissivity is easy to implement, and can realize the regulation and control of the physical properties of the material by only controlling the proportions of different isotope sources to realize the isotope ratio of the target in the process of depositing the material film, and complicated steps such as photoetching, surface graphical design and the like are not needed.
(3) The method for regulating and controlling the spectral emissivity is simple, clear and efficient in design; material growth and device fabrication can be performed on the wafer scale with relatively low cost, simple fabrication steps, with higher repeatability, stability, and new design considerations and methods for selecting emitters can be provided.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. In the drawings:
FIG. 1 is a flow chart of a method for spectral emissivity regulation based on isotope engineering provided by the invention;
FIG. 2 is a schematic diagram of spectral emissivity modulation of various devices to be modulated (e.g., bolometric diodes, thermophotovoltaic systems, etc.) based on isotope engineering;
FIG. 3 is a schematic diagram of the modulation of the spectral emissivity of a bolometric diode based on isotope engineering;
FIG. 4 is a graph showing the relationship of the local electromagnetic state density between the materials of the components of the bolometric diode;
FIG. 5 shows the relationship between the rectification ratio of cBN bolded diodes with different isotope ratios and the film thickness of the cBN bolded diodes;
FIG. 6 shows the absolute magnitude of the rectification ratio and the relative maximum rise ratio after adjustment of the spectral emissivity of the bolometric diode based on isotope engineering;
FIG. 7 is a graph showing the maximum rectification ratio obtained by adjusting different damping factors by other auxiliary means after the spectral emissivity of the bolometric diode is adjusted based on isotope engineering;
FIG. 8 is a schematic diagram of a bolometric diode after spectral emissivity modulation according to the method of the present invention; the heat source comprises a 1-heat source needing unidirectional heat radiation, a 2-top layer high-reflection substrate, a 3-top layer transparent substrate, a 4-nonlinear thermal end, a 5-band-pass filter end, a 6-bottom layer transparent substrate, a 7-bottom layer high-reflection substrate, an 8-radiation shielding cavity and a 9-heat sink;
FIG. 9 is a schematic diagram of spectral emissivity modulation by a thermophotovoltaic system based on isotope engineering;
FIG. 10 is a schematic diagram of a thermal photovoltaic system with spectral emissivity regulated according to the method of the present invention; wherein, 10-high temperature heat source, 11-high temperature emitter, 12-photovoltaic cell, 13-radiation shielding cavity, 14-heat sink.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below. It should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The invention provides a method for regulating and controlling spectral emissivity based on isotope engineering and application thereof, wherein a flow chart of the method is shown in figure 1; the method comprises the steps of carrying out isotope engineering optimization design on at least one component of a device to be regulated, wherein the isotope engineering optimization design comprises the following steps: and the interaction process of the material light and the substance of the component is regulated by utilizing different isotope ratios so as to achieve the target spectral emission parameter, thereby realizing the regulation and control of the spectral emissivity of the device to be regulated.
The method for regulating and controlling the spectral emissivity mainly utilizes isotope engineering to regulate and control the spectral characteristics of interaction of material light and substances; and optionally co-designed with other ancillary means (e.g., element doping, voltage modulation, structural design) to achieve critical target parameters.
In the following, a method for spectral emissivity control based on isotope engineering according to the present invention and typical representative applications thereof are as follows: the application fields of the invention are not limited to the thermal diode, the thermal switch, the thermal photovoltaic and the like, and the invention is also applicable to other fields of infrared emission and detection, thermal modulation, thermal logic, thermal conversion, thermal storage and the like, so that the requirements of various fields requiring spectrum regulation scenes can be met.
In an embodiment, the technical scheme of the invention is described by taking a radiation thermal diode as a specific device with reference to fig. 3-8.
A bolometric diode is similar to an electrical diode, which generally comprises two end components: a nonlinear thermal end and a bandpass filter end. The nonlinear thermal end has larger spectral radiation capability change at different temperatures and is mainly used for providing contrast of spectral emissivity at a positive temperature gradient (forward heat flow conduction) and a reverse temperature gradient (reverse heat flow blocking); the spectral response of the band-pass filter end does not change with temperature, and is mainly used for selecting the emissivity contrast of the nonlinear thermal end at the forward and reverse temperatures.
Therefore, according to the working principle of the bolter diode, the embodiment provides a method for regulating and controlling the spectral emissivity of the bolter diode based on isotope engineering, which comprises the following steps:
a bolometer diode comprising opposed nonlinear thermal and bandpass filter terminals. The spectral emissivity of the bolometric diode is regulated.
The working schematic diagram and working principle of the radiant heat diode under different working conditions are shown in fig. 3, and the performance of the radiant heat diode is defined as a rectification ratio, namely the ratio of forward heat flow to reverse heat flow is reduced by one. The isotope ratio can be changed, so that the interaction (dielectric function) between the material and external photons is changed, the local electromagnetic state density of the material is further influenced, and the emission spectrum is regulated and controlled, so that the rectification ratio is as large as possible.
In this embodiment, the phase change material or the material whose dielectric function changes drastically with temperature is selected as the material of the nonlinear thermal end, such as VO 2 The method comprises the steps of carrying out a first treatment on the surface of the Polar dielectric materials having two or more variable temperature isotopes are selected as bandpass filter end materials, such as cBN.
As polar dielectric, the dielectric function of a material can be described by the lorentz oscillator model:
wherein, epsilon in the formula ∞ Is high-frequency dielectric constant, Γ is damping factor, ω TO And omega LO The transverse optical phonon frequency and the longitudinal optical phonon frequency are respectively located at the point Γ of the first brillouin zone of the material. Wherein the decisive parameters are: transverse optical phonon ω TO Longitudinal optical phonon omega LO Damping factor Γ, high-frequency dielectric constant ε ∞ And low frequency dielectric constant epsilon 0 。
Wherein the transverse optical phonon omega TO And longitudinal optical phonon omega LO There is a simple linear relationship with the magnitude of the reduced mass of the material after square root taking the reciprocal. As the proportion of certain light isotopes in the material increases, the transverse optical phonon ω TO And longitudinal optical phonon omega LO Will translate to high frequencies; meanwhile, when the mass fluctuation caused by different isotopes in the material is maximum (namely, the mass distribution is most chaotic), the damping factor Γ reaches the maximum value, and the broadening effect of the local electromagnetic state density is reflected.
For the radiant heat diode, different boron isotopes in the cBN of the material of the band-pass filter end can be changed 11 B、 10 B) The content of (3) is used for realizing the regulation of the spectral emissivity.
In particular, in one embodiment, four different isotopic composition ratios of cubic boron nitride are contemplated, where 10 B is 0 (c) 11 BN)，20％(c nat BN)，50％(c eq BN)，100％(c 10 BN)。
The vacuum interval of the thermal diode is 100nm, the high temperature end and the low temperature end are 351K and 331K respectively, and VO with the thickness of 1nm is adopted 2 The films served as metallic and insulating phases at these two temperatures, respectively, to provide spectral emissivity contrast, with cBN being a 100nm thick film structure.
To observe the effect of isotope engineering on the physical properties related to the emissivity of the material, VO under a metal phase and an insulating phase with a thickness of 1nm is plotted 2 And the local electromagnetic state density at 100nm above cBN of four different isotope composition ratios,at the same time VO is also drawn 2 The ratio of the local electromagnetic state densities at the positive (metallic phase), reverse temperature difference (insulator phase) is shown in fig. 4.
VO for nonlinear thermal end material 2 In other words, there is a significant difference in the local electromagnetic state density between the metallic phase and the insulating phase. Since the bolometric diode utilizes VO 2 The difference of the spectral energy in the two states is used for conducting the radiant heat flow, if the bandpass filter end can reasonably screen VO 2 And in the frequency section with the largest ratio of the local electromagnetic state density under two phases, obtaining the radiation thermal diode with optimal performance.
It is noted that the pair VO of cBN of four different isotope composition ratios due to the shift and broadening effects of the isotopes on cBN phonons 2 The screening capability of the frequency band with the largest ratio of the local electromagnetic state density under two phases is different, so that cBN and VO with four different isotope composition ratios 2 The performance of the radiant heat diode formed by matching also shows obvious difference, as shown in fig. 5.
In fig. 5, in order to consider both the coupling effect of the thin film on the surface wave supporting the surface plasmon polariton material and the effect of the thickness in actual growth on the performance of the bolded thermal diode in example 1, the thickness of cBN is no longer fixed at 100nm but varies within 1nm to 1000 nm. The bolometric diode performance is often measured by a rectification ratio R, defined as r=q for /Q re -1. Wherein Q is for Is the heat flow size under the forward temperature difference, Q re Is the heat flow under the reverse temperature difference.
Specifically, VO with a thickness of 1nm is used 2 And c 10 The BN film can realize a rectification ratio of up to 155, which is the same as that of the use of c nat The optimal performance obtained by BN as material for the band-pass filter 5 is improved by about 10%.
To further embody a different VO 2 The effect of isotope engineering on the performance of the bolometric diode at film thickness, the embodiment researches VO with thickness of 1 nm-1000 nm 2 Radiant heat diode composed of film and cBN film with thickness of 1 nm-1000 nm is rectified after isotope engineering optimization designThe ratio is enhanced as shown in fig. 6. The enhancement effect β of the rectification ratio is defined as: beta=r max /R min -1. Wherein R is max Is a larger rectification ratio, R min Is a smaller rectification ratio.
When the radiation thermal diode is formed by the film with the thickness of 1nm under the vacuum interval of 100nm, in the range of the cBN film with a certain thickness (300 nm-600 nm), the enhancement effect of the rectification ratio of the radiation thermal diode is close to 0.9 by isotope engineering, namely, c is adopted eq The BN thermal rectification ratio can be nearly up to c 10 BN is twice the bandpass filter.
In particular, since isotopes can affect both phonon frequency and phonon broadening, these two important parameters are separable in practical device designs, i.e., phonon frequency shift and damping factor size designs can be handled separately.
For example, in some embodiments, as can be derived from FIG. 7, the greater the damping factor Γ is, the better. When the damping factor gamma is too large, the spectral emissivity of the band-pass filter is embodied as a broad spectrum characteristic, and the phonon frequency shift effect caused by isotope engineering is smaller, so that the screening effect on the frequency band with the large emissivity ratio of the nonlinear thermal response end is weaker.
In this case, the co-design of the spectral emissivity regulating device can be performed based on other auxiliary design means such as element doping, voltage modulation, structural design, and the like, and isotope engineering. The optimal spectral emissivity of the device under different actual parameter combinations can be obtained by not only translating the peak position of the emissivity through isotopes, but also adjusting the damping factor through other auxiliary means.
After the spectral emissivity of the band-pass filter end 5 of the bolter diode is optimally designed through isotope engineering, as shown in fig. 8, the bolter diode is sequentially provided with the following components from top to bottom:
the heat source 1 with unidirectional heat radiation, the top layer high-reflection substrate 2, the top layer transparent substrate 3, the nonlinear thermal end 4, the band-pass filter end 5, the bottom layer transparent substrate 6, the bottom layer high-reflection substrate 7 and the heat sink 9 are needed; the top layer high-reflection substrate 2, the top layer transparent substrate 3, the nonlinear thermal end 4, the band-pass filter end 5, the bottom layer transparent substrate 6 and the bottom layer high-reflection substrate 7 are arranged in the radiation shielding cavity 8;
the material of the nonlinear thermal end 4 is phase change material vanadium dioxide (VO 2 ) The material of the band-pass filter end 5 is cubic boron nitride (cBN);
the thickness of the nonlinear thermal end 4 can be selected from 1-10 nm;
the thickness of the band-pass filter end 5 is not limited, and the preferable thickness is changed within the range of 100-300 nm;
different working conditions of the nonlinear thermal end 4 and the heat source 1 needing unidirectional heat radiation are bounded by 341K, namely the temperature change range should cross 341K so as to ensure that the nonlinear thermal end 4 can generate phase change;
the nonlinear thermal end 4 and the band-pass filter end 5 are positioned in the radiation shielding cavity 8 and are separated by a vacuum interval of 10 nm-10 mu m;
the nonlinear thermal end 4 is deposited on the top transparent substrate 3 and is connected with the heat source 1 needing unidirectional heat radiation at the outer side of the radiation shielding cavity 8 through a heat conducting adhesive by the top highly reflective substrate 2;
the bandpass filter end 5 is deposited on a bottom transparent substrate 6, and the bottommost layer is connected with a heat sink 9 outside a radiation shielding cavity 8 through a heat conducting adhesive by a low-layer highly reflective substrate 7 with high reflectivity which can reduce radiation energy loss.
In an embodiment, the technical scheme of the invention is described by taking thermophotovoltaics as a specific device with reference to fig. 9-10.
Thermophotovoltaics (TPV) is a thermoelectric conversion device proposed in the 50 s of the 20 th century. The most important two components are a high-temperature emitter end and a photovoltaic cell end.
The maximum difference between the thermophotovoltaics and the photovoltaic cells is that the thermophotovoltaics not only can collect solar energy, but also can be used for other high-temperature heat sources including combustion energy, nuclear energy, waste heat and the like, so that the cogeneration can be realized, and the output can be pure electric energy or electric energy heating energy. The thermophotovoltaic device has no moving parts, no noise or greenhouse gas emission, stability and durability; the device is suitable for miniaturization and has good portability; is compatible with other energy conversion technologies; the system can be used as a first choice for distributed power generation and point gauge active thermal management; potentially higher efficiency; the power may range from μw to kW, etc.
The principle of operation of a typical thermophotovoltaic system is to convert thermal energy at infrared wavelengths into electrical energy in the form of photons. In order to transfer as much energy as possible from the high-temperature heat source radiation emitter to the photovoltaic cell and fully convert the energy into electric energy, if the photovoltaic cell is not considered, high-quality spectrum control is often required to be performed on each component (such as a high-temperature emitting end for structural design or a component with adjustable spectral emissivity such as a spectral filter added at the front end of the photovoltaic cell) when the photovoltaic cell is designed.
In the current thermophotovoltaics research, even through complex structural design and emitter-photovoltaic cell combined design, the effective spectral efficiency with the best performance is still lower than 50%. Therefore, according to the working principle of the thermophotovoltaic cell, the embodiment provides a method for regulating and controlling the spectral emissivity of the thermophotovoltaic cell based on isotope engineering, which comprises the following steps:
as shown in fig. 10, the thermophotovoltaic system is provided with the following components in order from top to bottom:
a high temperature heat source 10, a high temperature emitter 11, a photovoltaic cell 12, a heat sink 14; the high temperature emitter 11 and the photovoltaic cell 12 are disposed within a radiation shielded cavity 13.
Taking a high-temperature heat source with the temperature of 1000K-1200K as an example, because the temperature of a high-temperature end needs to be matched with a photovoltaic cell with a lower band gap, the bandwidth of the photovoltaic cell 12 in the thermal photovoltaic system is selected to be about 0.7eV according to the temperature (operation working condition) of the high-temperature end and the relation between the Vien displacement law and the band gap and the wavelength of the photovoltaic cell.
Making the photovoltaic cell 12 be III-V group In x Ga 1-x As alloy semiconductor cell, specifically, the ratio of each element In the alloy changes the cell bandwidth, and In is specifically selected In this embodiment 0.53 Ga 0.47 As。
To achieve a higher emissivity in the optimal spectral range of the target device above 0.6eV and to suppress photon emission at energies below 0.6 eV. The high-temperature emitter 11 and the photovoltaic cell 12 are vacuum gaps, and the size range can be nano-scale spacing, micro-scale spacing or macroscopic centimeter-scale spacing; in order to achieve a high output density at the same time, the vacuum distance is preferably in the range of 10 to 10 μm.
In one embodiment, the thickness of the high temperature emitter 11 may be 10 to 20 μm.
In one embodiment, the photovoltaic cells 12 are matched in area to the high temperature emitter 11 and can have a total thickness of 1-4 μm.
According to the optimal spectral range, the material of the high-temperature emitter 11 is selected to be highly doped silicon, so that high emissivity of the high-temperature emitter in the optimal spectral range can be realized, spectral design can be performed by adjusting different silicon isotope ratios in the doped silicon, and the tolerance of the high-temperature emitter at high temperature is ensured.
In one embodiment, the carrier concentration of the doped highly doped silicon is 1×10 18 cm -3 ～1×10 20 cm -3 Internal variation.
Si has three different isotopes in natural state, respectively 28 Si、 29 Si and 30 si. The highly doped silicon is in natural state 28 Si predominates but some heavier mass is still present in the crystal 30 Si isotopes. As shown in fig. 9, the highly doped silicon can be isotopically engineered 30 Si is purified to 28 The Si realizes the blue shift of the Si emission spectrum of the doped silicon high-temperature emitter, and the damping factor of the material can be reduced by reducing the mass fluctuation, so that the Si is better matched with the absorption spectrum of the photovoltaic cell, and the conversion efficiency and the output power density of the thermal photovoltaic system are improved.
After the spectral emissivity of the high-temperature emitter in the thermal photovoltaic system is optimally designed through isotope engineering, in the thermal photovoltaic system,
the high temperature emitter 11 has a thickness of 10-20 μm and a carrier concentration of 28 Si isotope purified carrier concentration of 1X 10 20 cm -3 Si doped in (a);
the photovoltaic cells 12 are high quality epitaxial growth with a thickness varying between 1 and 4 μm and an area matching the high temperature emitter 11In of (a) 0.53 Ga 0.47 As；
The radiation shielding cavity 13 is filled with insulating gas or vacuum environment to reduce heat radiation loss;
the high-temperature emitter 11 and the photovoltaic cell 12 are packaged in the radiation shielding cavity 13 through packaging-like technology;
a vacuum gap is formed between the high-temperature emitter 11 and the photovoltaic cell 12 in the radiation shielding cavity 13;
the size range of the vacuum gap can be nano-scale spacing, micro-scale spacing or macroscopic centimeter-scale spacing, and the preferable range of the vacuum spacing is 10-10 mu m for realizing larger output power density at the same time;
the radiation shielding cavity 13 is attached to the high-temperature heat source 10 through a heat conducting adhesive;
the radiation shielding cavity 13 is attached to the heat sink 14 by a thermally conductive adhesive.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (13)
1. A method for spectral emissivity regulation based on isotope engineering, comprising: performing isotope engineering optimization design on at least one component of a device to be regulated, wherein the isotope engineering optimization design comprises the following steps: and the interaction process of the material light and the substance of the component is regulated by utilizing different isotope ratios so as to achieve the target spectral emission parameter, thereby realizing the regulation and control of the spectral emissivity of the device to be regulated.
2. The method for regulating and controlling the spectral emissivity according to claim 1, wherein the process of regulating the interaction of the material light and the substance by utilizing different isotope ratios comprises the following specific steps: by using different isotope ratios, the dielectric function of the interaction of the material light and the substance is changed, so that the absorption and emission characteristics of the material on photons are adjusted.
3. The method of spectral emissivity tuning of claim 1 wherein said device to be tuned is selected from the group consisting of:
the radiation heat diode comprises a nonlinear thermal end and a band-pass filter end which are oppositely arranged;
a thermal switch;
a thermal photovoltaic system comprising a plurality of photovoltaic cells, the thermophotovoltaic system comprises a high-temperature heat source, a high-temperature emitter and a photovoltaic cell;
an infrared detector.
4. A method of spectral emissivity tuning in accordance with claim 3, wherein said device to be tuned is a bolometric diode; the method for regulating and controlling the spectral emissivity comprises the following steps: the spectral emissivity is regulated and controlled by changing the isotope ratio in the material of the band-pass filter end.
5. The method of spectral emissivity control of claim 4, wherein said bandpass filter end is cBN, said spectral emissivity control being achieved by varying the ratio of boron isotopes in said bandpass filter end material.
6. The method of spectral emissivity control of claim 4, wherein said nonlinear thermal end material is phase change material VO 2 。
7. A method of spectral emissivity tuning in accordance with claim 3, wherein said device to be tuned is a thermophotovoltaic system; the method for regulating and controlling the spectral emissivity comprises the following steps: the spectral emissivity is regulated and controlled by changing the isotope ratio in the material of the high-temperature emitter.
8. The method of spectral emissivity control of claim 7, wherein said high temperature emitter material is highly doped silicon, said spectral emissivity control being achieved by varying the silicon isotope ratio in said high temperature emitter material.
9. The method of claim 1, wherein the operating spectral range of the device to be tuned comprises a far infrared spectral range, a mid infrared spectral range, a near infrared spectral range, a visible spectral range, a near ultraviolet spectral range, an ultraviolet spectral range.
10. The method of spectral emissivity tuning of claim 1, wherein said components are made of materials having different stable isotope ratios, and/or supporting surface wave excitation.
11. The method of spectral emissivity control of claim 1, wherein said component is made of a polar dielectric, metal or semiconductor.
12. A method of spectral emissivity regulation as in claim 3, wherein the method of spectral emissivity regulation comprises: determining a target spectral range of the device to be regulated and controlled according to the operation condition, and selecting spectral emission characteristics of different isotope ratio materials of at least one component of the device to be regulated and controlled according to any one or any combination of indexes of the response spectral range, the peak frequency and the full width at half maximum, so as to determine the isotope ratio of the target; in the process of preparing the component, the isotope ratio of the target is realized by controlling the proportions of different isotope sources when the material film is deposited, so that the regulation and control of the physical properties of the material are realized.
13. The method of spectral emissivity tuning of claim 1, further comprising: adopting an auxiliary means to carry out collaborative design; the auxiliary means are selected from element doping, voltage modulation and structural design.
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| US6433474B1 (en) * | 1997-12-29 | 2002-08-13 | Tokyo Gas Co., Ltd. | Current injection-type diamond ultraviolet light-emitting device |
| CN110431652A (en) * | 2017-03-15 | 2019-11-08 | 半核子有限公司 | It supports from thermalization and the processing of self-positioning low-dimensional materials and manufacture |
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