IL195699A - Oxidative silicon polishing method used in colloidal silica - Google Patents

Oxidative silicon polishing method used in colloidal silica

Info

Publication number
IL195699A
IL195699A IL195699A IL19569908A IL195699A IL 195699 A IL195699 A IL 195699A IL 195699 A IL195699 A IL 195699A IL 19569908 A IL19569908 A IL 19569908A IL 195699 A IL195699 A IL 195699A
Authority
IL
Israel
Prior art keywords
substrate
liquid carrier
polishing
less
silicon oxide
Prior art date
Application number
IL195699A
Other languages
English (en)
Hebrew (he)
Other versions
IL195699A0 (en
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of IL195699A0 publication Critical patent/IL195699A0/en
Publication of IL195699A publication Critical patent/IL195699A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL195699A 2006-06-29 2008-12-03 Oxidative silicon polishing method used in colloidal silica IL195699A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/478,004 US20080220610A1 (en) 2006-06-29 2006-06-29 Silicon oxide polishing method utilizing colloidal silica
PCT/US2007/013943 WO2008005164A1 (en) 2006-06-29 2007-06-14 Silicon oxide polishing method utilizing colloidal silica

Publications (2)

Publication Number Publication Date
IL195699A0 IL195699A0 (en) 2009-09-01
IL195699A true IL195699A (en) 2014-08-31

Family

ID=38894886

Family Applications (1)

Application Number Title Priority Date Filing Date
IL195699A IL195699A (en) 2006-06-29 2008-12-03 Oxidative silicon polishing method used in colloidal silica

Country Status (10)

Country Link
US (1) US20080220610A1 (https=)
EP (1) EP2038916A4 (https=)
JP (1) JP5596344B2 (https=)
KR (1) KR101378259B1 (https=)
CN (1) CN101479836A (https=)
IL (1) IL195699A (https=)
MY (1) MY151925A (https=)
SG (1) SG172740A1 (https=)
TW (1) TWI375264B (https=)
WO (1) WO2008005164A1 (https=)

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FR2929756B1 (fr) * 2008-04-08 2010-08-27 Commissariat Energie Atomique Procede de formation de materiau poreux dans une microcavite ou un micropassage par polissage mecano-chimique
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JP5407188B2 (ja) * 2008-06-11 2014-02-05 信越化学工業株式会社 合成石英ガラス基板用研磨剤
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US20100164106A1 (en) * 2008-12-31 2010-07-01 Cheil Industries Inc. CMP Slurry Composition for Barrier Polishing for Manufacturing Copper Interconnects, Polishing Method Using the Composition, and Semiconductor Device Manufactured by the Method
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8247328B2 (en) * 2009-05-04 2012-08-21 Cabot Microelectronics Corporation Polishing silicon carbide
US8232208B2 (en) 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US8513126B2 (en) 2010-09-22 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate
CN102800580B (zh) * 2011-05-25 2015-07-08 中芯国际集成电路制造(上海)有限公司 抛光方法以及栅极的形成方法
KR102464630B1 (ko) * 2014-06-25 2022-11-08 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물
ES2756948B2 (es) * 2020-02-04 2022-12-19 Drylyte Sl Electrolito solido para el electropulido en seco de metales con moderador de actividad

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Also Published As

Publication number Publication date
US20080220610A1 (en) 2008-09-11
JP2009543337A (ja) 2009-12-03
EP2038916A1 (en) 2009-03-25
SG172740A1 (en) 2011-07-28
JP5596344B2 (ja) 2014-09-24
TW200807533A (en) 2008-02-01
MY151925A (en) 2014-07-31
CN101479836A (zh) 2009-07-08
KR101378259B1 (ko) 2014-03-25
EP2038916A4 (en) 2011-04-13
TWI375264B (en) 2012-10-21
WO2008005164A1 (en) 2008-01-10
KR20090024195A (ko) 2009-03-06
IL195699A0 (en) 2009-09-01

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