IL188790A0 - Processes for preparing low dielectric films - Google Patents

Processes for preparing low dielectric films

Info

Publication number
IL188790A0
IL188790A0 IL188790A IL18879003A IL188790A0 IL 188790 A0 IL188790 A0 IL 188790A0 IL 188790 A IL188790 A IL 188790A IL 18879003 A IL18879003 A IL 18879003A IL 188790 A0 IL188790 A0 IL 188790A0
Authority
IL
Israel
Prior art keywords
low dielectric
processes
dielectric films
preparing low
performance
Prior art date
Application number
IL188790A
Other languages
English (en)
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of IL188790A0 publication Critical patent/IL188790A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Insulating Materials (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Paints Or Removers (AREA)
IL188790A 2002-05-30 2003-06-01 Processes for preparing low dielectric films IL188790A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38432102P 2002-05-30 2002-05-30
US10/638,942 US7122880B2 (en) 2002-05-30 2003-05-20 Compositions for preparing low dielectric materials

Publications (1)

Publication Number Publication Date
IL188790A0 true IL188790A0 (en) 2008-04-13

Family

ID=29718525

Family Applications (2)

Application Number Title Priority Date Filing Date
IL188790A IL188790A0 (en) 2002-05-30 2003-06-01 Processes for preparing low dielectric films
IL156231A IL156231A (en) 2002-05-30 2003-06-01 Compositions for preparing low dielectric materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL156231A IL156231A (en) 2002-05-30 2003-06-01 Compositions for preparing low dielectric materials

Country Status (10)

Country Link
US (3) US7122880B2 (enExample)
EP (2) EP1376671B1 (enExample)
JP (2) JP2004161601A (enExample)
KR (1) KR100561884B1 (enExample)
CN (1) CN100539037C (enExample)
AT (1) ATE365376T1 (enExample)
DE (1) DE60314475T2 (enExample)
IL (2) IL188790A0 (enExample)
SG (1) SG110057A1 (enExample)
TW (2) TWI265531B (enExample)

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Also Published As

Publication number Publication date
EP1376671A1 (en) 2004-01-02
DE60314475D1 (de) 2007-08-02
TWI303834B (en) 2008-12-01
US7294585B2 (en) 2007-11-13
TW200703375A (en) 2007-01-16
IL156231A (en) 2009-02-11
SG110057A1 (en) 2005-04-28
EP1852903A3 (en) 2008-12-10
EP1376671B1 (en) 2007-06-20
EP1852903A2 (en) 2007-11-07
CN100539037C (zh) 2009-09-09
KR20030094056A (ko) 2003-12-11
JP2004161601A (ja) 2004-06-10
TWI265531B (en) 2006-11-01
US20060249713A1 (en) 2006-11-09
ATE365376T1 (de) 2007-07-15
JP2010123992A (ja) 2010-06-03
IL156231A0 (en) 2004-01-04
KR100561884B1 (ko) 2006-03-17
CN1487567A (zh) 2004-04-07
US20040048960A1 (en) 2004-03-11
US20060249818A1 (en) 2006-11-09
TW200401310A (en) 2004-01-16
US7122880B2 (en) 2006-10-17
DE60314475T2 (de) 2008-02-28
US7482676B2 (en) 2009-01-27

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