TW200509184A - CMP sizing material, polishing method and method for manufacturing semiconductor device - Google Patents

CMP sizing material, polishing method and method for manufacturing semiconductor device

Info

Publication number
TW200509184A
TW200509184A TW093112543A TW93112543A TW200509184A TW 200509184 A TW200509184 A TW 200509184A TW 093112543 A TW093112543 A TW 093112543A TW 93112543 A TW93112543 A TW 93112543A TW 200509184 A TW200509184 A TW 200509184A
Authority
TW
Taiwan
Prior art keywords
cmp
semiconductor device
sizing material
manufacturing semiconductor
polishing method
Prior art date
Application number
TW093112543A
Other languages
Chinese (zh)
Other versions
TWI252506B (en
Inventor
Gaku Minamihaba
Yukiteru Matsui
Hiroyuki Yano
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200509184A publication Critical patent/TW200509184A/en
Application granted granted Critical
Publication of TWI252506B publication Critical patent/TWI252506B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

There is disclosed a CMP slurry comprising composite type particles composed of a resin component and an inorganic component, which are complexed with each other, and resin particles, the CMP slurry having a viscosity of less than 10 mPas.
TW093112543A 2003-05-14 2004-05-04 CMP sizing material, polishing method and method for manufacturing semiconductor device TWI252506B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003136014A JP2004342751A (en) 2003-05-14 2003-05-14 Cmp slurry, polishing method, and method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
TW200509184A true TW200509184A (en) 2005-03-01
TWI252506B TWI252506B (en) 2006-04-01

Family

ID=33526114

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112543A TWI252506B (en) 2003-05-14 2004-05-04 CMP sizing material, polishing method and method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US20050003743A1 (en)
JP (1) JP2004342751A (en)
CN (1) CN1295758C (en)
TW (1) TWI252506B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0513910D0 (en) * 2005-07-07 2005-08-10 Univ Newcastle Immobilisation of biological molecules
KR101067095B1 (en) * 2006-03-20 2011-09-22 미쓰이 가가쿠 가부시키가이샤 Polishing composition
US20070264829A1 (en) * 2006-05-12 2007-11-15 Hynix Semiconductor Inc. Slurry and method for chemical mechanical polishing
US8010094B2 (en) * 2006-06-06 2011-08-30 Turner Broadcasting System, Inc. Mobile device with themed multimedia effects
JP2009267367A (en) * 2008-03-31 2009-11-12 Toshiba Corp Semiconductor device manufacturing method
EP2364241A4 (en) * 2008-04-18 2013-12-11 Saint Gobain Abrasives Inc Hydrophilic and hydrophobic silane surface modification of abrasive grains
US20110126890A1 (en) * 2009-11-30 2011-06-02 Nicholas Francis Borrelli Textured superstrates for photovoltaics
CN102101976A (en) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 Chemical mechanical polishing solution
US20110177623A1 (en) * 2010-01-15 2011-07-21 Confluense Llc Active Tribology Management of CMP Polishing Material
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
JP2017037918A (en) * 2015-08-07 2017-02-16 エスアイアイ・セミコンダクタ株式会社 Polishing head, cmp polishing device having the same, and method of manufacturing semiconductor integrated circuit using the device
JP6788988B2 (en) 2016-03-31 2020-11-25 株式会社フジミインコーポレーテッド Polishing composition
CN112872916B (en) * 2020-12-28 2023-03-10 富联裕展科技(深圳)有限公司 Polishing system and polishing method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100447551B1 (en) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 Composite Particles and Production Process Thereof, Aqueous Dispersion, Aqueous Dispersion Composition for Chemical Mechanical Polishing, and Process for Manufacture of Semiconductor Apparatus
EP1104778B1 (en) * 1999-11-22 2004-11-03 JSR Corporation Method of production of composited particle for chemical mechanical polishing
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
JP2001269859A (en) * 2000-03-27 2001-10-02 Jsr Corp Aqueous dispersing element for polishing chemical machine
JP3975047B2 (en) * 2000-04-21 2007-09-12 泰弘 谷 Polishing method
EP1295682B1 (en) * 2000-05-31 2007-10-24 JSR Corporation Abrasive material
JP4654544B2 (en) * 2000-07-12 2011-03-23 日産化学工業株式会社 Gap fill material forming composition for lithography
JP3993369B2 (en) * 2000-07-14 2007-10-17 株式会社東芝 Manufacturing method of semiconductor device
JP3768401B2 (en) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 Chemical mechanical polishing slurry
JP3922887B2 (en) * 2001-03-16 2007-05-30 株式会社荏原製作所 Dresser and polishing device
JP4187497B2 (en) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 Chemical mechanical polishing method for semiconductor substrate

Also Published As

Publication number Publication date
JP2004342751A (en) 2004-12-02
CN1295758C (en) 2007-01-17
US20050003743A1 (en) 2005-01-06
CN1551304A (en) 2004-12-01
TWI252506B (en) 2006-04-01

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