IL161965A0 - Surface emitting dfb laser for structures for broadband communication system and array of the same - Google Patents

Surface emitting dfb laser for structures for broadband communication system and array of the same

Info

Publication number
IL161965A0
IL161965A0 IL16196502A IL16196502A IL161965A0 IL 161965 A0 IL161965 A0 IL 161965A0 IL 16196502 A IL16196502 A IL 16196502A IL 16196502 A IL16196502 A IL 16196502A IL 161965 A0 IL161965 A0 IL 161965A0
Authority
IL
Israel
Prior art keywords
array
structures
communication system
same
surface emitting
Prior art date
Application number
IL16196502A
Other languages
English (en)
Original Assignee
Photonami Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photonami Inc filed Critical Photonami Inc
Publication of IL161965A0 publication Critical patent/IL161965A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
IL16196502A 2001-11-16 2002-11-15 Surface emitting dfb laser for structures for broadband communication system and array of the same IL161965A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA002363149A CA2363149A1 (en) 2001-11-16 2001-11-16 Surface emitting dfb laser structures for broadband communication systems and array of same
PCT/CA2002/001746 WO2003044910A2 (en) 2001-11-16 2002-11-15 Surface emitting dfb laser structures and array of the same for broadband communication system

Publications (1)

Publication Number Publication Date
IL161965A0 true IL161965A0 (en) 2005-11-20

Family

ID=4170544

Family Applications (1)

Application Number Title Priority Date Filing Date
IL16196502A IL161965A0 (en) 2001-11-16 2002-11-15 Surface emitting dfb laser for structures for broadband communication system and array of the same

Country Status (12)

Country Link
US (1) US20050053112A1 (ja)
EP (1) EP1454391A2 (ja)
JP (1) JP2005510090A (ja)
KR (1) KR20040066127A (ja)
CN (1) CN1602570A (ja)
AU (1) AU2002342456A1 (ja)
CA (1) CA2363149A1 (ja)
IL (1) IL161965A0 (ja)
MX (1) MXPA04004666A (ja)
NO (1) NO20033213L (ja)
RU (1) RU2004118304A (ja)
WO (1) WO2003044910A2 (ja)

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CN113725725A (zh) 2017-09-28 2021-11-30 苹果公司 使用量子阱混合技术的激光架构
AU2020100473B4 (en) * 2017-09-29 2020-11-26 Apple Inc. Connected epitaxial optical sensing systems
WO2019067450A1 (en) * 2017-09-29 2019-04-04 Masseta Technologies Llc CONNECTED EPITAXIAL OPTICAL DETECTION SYSTEMS
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US11226459B2 (en) 2018-02-13 2022-01-18 Apple Inc. Integrated photonics device having integrated edge outcouplers
CN108736314B (zh) * 2018-06-12 2020-06-19 中国科学院半导体研究所 电注入硅基iii-v族纳米激光器阵列的制备方法
US11644618B2 (en) 2018-06-22 2023-05-09 Apple Inc. Discrete optical unit on a substrate of an integrated photonics chip
US11525967B1 (en) 2018-09-28 2022-12-13 Apple Inc. Photonics integrated circuit architecture
US11171464B1 (en) 2018-12-14 2021-11-09 Apple Inc. Laser integration techniques
US11506535B1 (en) 2019-09-09 2022-11-22 Apple Inc. Diffraction grating design
US11231319B1 (en) 2019-09-09 2022-01-25 Apple Inc. Athermal wavelength stability monitor using a detraction grating
US11525958B1 (en) 2019-09-09 2022-12-13 Apple Inc. Off-cut wafer with a supported outcoupler
US11835836B1 (en) 2019-09-09 2023-12-05 Apple Inc. Mach-Zehnder interferometer device for wavelength locking
US11881678B1 (en) 2019-09-09 2024-01-23 Apple Inc. Photonics assembly with a photonics die stack
US11320718B1 (en) 2019-09-26 2022-05-03 Apple Inc. Cantilever beam waveguide for silicon photonics device
US11500154B1 (en) 2019-10-18 2022-11-15 Apple Inc. Asymmetric optical power splitting system and method
CN111755946A (zh) * 2020-06-30 2020-10-09 中国科学院半导体研究所 有源腔与无源腔交替结构的dfb激光器
US11852318B2 (en) 2020-09-09 2023-12-26 Apple Inc. Optical system for noise mitigation
US11852865B2 (en) 2020-09-24 2023-12-26 Apple Inc. Optical system with phase shifting elements
US11561346B2 (en) 2020-09-24 2023-01-24 Apple Inc. Tunable echelle grating
US11906778B2 (en) 2020-09-25 2024-02-20 Apple Inc. Achromatic light splitting device with a high V number and a low V number waveguide
US11815719B2 (en) 2020-09-25 2023-11-14 Apple Inc. Wavelength agile multiplexing

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Also Published As

Publication number Publication date
CA2363149A1 (en) 2003-05-16
NO20033213L (no) 2003-09-16
RU2004118304A (ru) 2005-04-10
CN1602570A (zh) 2005-03-30
WO2003044910A3 (en) 2003-12-11
AU2002342456A1 (en) 2003-06-10
EP1454391A2 (en) 2004-09-08
KR20040066127A (ko) 2004-07-23
MXPA04004666A (es) 2005-05-17
WO2003044910A2 (en) 2003-05-30
NO20033213D0 (no) 2003-07-15
JP2005510090A (ja) 2005-04-14
US20050053112A1 (en) 2005-03-10

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