IL141592A - Electrolytic capacitors and method for making them - Google Patents
Electrolytic capacitors and method for making themInfo
- Publication number
- IL141592A IL141592A IL141592A IL14159201A IL141592A IL 141592 A IL141592 A IL 141592A IL 141592 A IL141592 A IL 141592A IL 14159201 A IL14159201 A IL 14159201A IL 141592 A IL141592 A IL 141592A
- Authority
- IL
- Israel
- Prior art keywords
- film
- substrate
- surface area
- high specific
- specific surface
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 60
- 239000010408 film Substances 0.000 claims description 167
- 229910052751 metal Inorganic materials 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 71
- 229910052782 aluminium Inorganic materials 0.000 claims description 62
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 62
- 239000007784 solid electrolyte Substances 0.000 claims description 44
- 229910044991 metal oxide Inorganic materials 0.000 claims description 39
- 150000004706 metal oxides Chemical class 0.000 claims description 39
- 238000002048 anodisation reaction Methods 0.000 claims description 35
- 238000001704 evaporation Methods 0.000 claims description 27
- 150000002739 metals Chemical class 0.000 claims description 27
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 27
- 238000001771 vacuum deposition Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 10
- 150000002910 rare earth metals Chemical class 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 9
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 230000002902 bimodal effect Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 89
- 239000011888 foil Substances 0.000 description 35
- 230000008020 evaporation Effects 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 9
- 239000003792 electrolyte Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical class CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 238000007743 anodising Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- -1 hydroxide ions Chemical class 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229940093476 ethylene glycol Drugs 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000000877 morphologic effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 235000011299 Brassica oleracea var botrytis Nutrition 0.000 description 1
- 240000003259 Brassica oleracea var. botrytis Species 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001379910 Ephemera danica Species 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229910000681 Silicon-tin Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- RHDUVDHGVHBHCL-UHFFFAOYSA-N niobium tantalum Chemical compound [Nb].[Ta] RHDUVDHGVHBHCL-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL141592A IL141592A (en) | 2001-02-22 | 2001-02-22 | Electrolytic capacitors and method for making them |
| EP02700547A EP1382048A4 (en) | 2001-02-22 | 2002-02-21 | ELECTROLYTIC CAPACITORS AND METHOD FOR THE PRODUCTION THEREOF |
| PCT/IL2002/000140 WO2002067278A2 (en) | 2001-02-22 | 2002-02-21 | Electrolytic capacitors and method for making them |
| AU2002233612A AU2002233612A1 (en) | 2001-02-22 | 2002-02-21 | Electrolytic capacitors and method for making them |
| JP2002566510A JP4390456B2 (ja) | 2001-02-22 | 2002-02-21 | 電解コンデンサーおよびその作製方法 |
| US10/646,229 US6865071B2 (en) | 1998-03-03 | 2003-08-22 | Electrolytic capacitors and method for making them |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL141592A IL141592A (en) | 2001-02-22 | 2001-02-22 | Electrolytic capacitors and method for making them |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL141592A0 IL141592A0 (en) | 2002-03-10 |
| IL141592A true IL141592A (en) | 2007-02-11 |
Family
ID=11075164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL141592A IL141592A (en) | 1998-03-03 | 2001-02-22 | Electrolytic capacitors and method for making them |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1382048A4 (ja) |
| JP (1) | JP4390456B2 (ja) |
| AU (1) | AU2002233612A1 (ja) |
| IL (1) | IL141592A (ja) |
| WO (1) | WO2002067278A2 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2004088690A1 (ja) * | 2003-03-31 | 2006-07-06 | 東洋アルミニウム株式会社 | コンデンサ陰極用箔およびその製造方法 |
| US7149076B2 (en) * | 2003-07-15 | 2006-12-12 | Cabot Corporation | Capacitor anode formed of metallic columns on a substrate |
| JP4561428B2 (ja) * | 2004-07-05 | 2010-10-13 | 住友金属鉱山株式会社 | 多孔質バルブ金属薄膜、その製造方法および薄膜キャパシタ |
| JP4561293B2 (ja) * | 2004-10-08 | 2010-10-13 | 住友金属鉱山株式会社 | 薄膜キャパシタおよび薄膜抵抗を有する回路部品ならびにその製造方法 |
| IL173121A (en) * | 2006-01-12 | 2011-07-31 | Dina Katsir | Electrodes, membranes, printing plate precursors and other articles including multi-strata porous coatings |
| JP2008258230A (ja) * | 2007-03-31 | 2008-10-23 | Nippon Chemicon Corp | 固体電解コンデンサ |
| WO2009125620A1 (ja) * | 2008-04-08 | 2009-10-15 | 株式会社村田製作所 | コンデンサおよびその製造方法 |
| JP5816794B2 (ja) | 2010-02-15 | 2015-11-18 | パナソニックＩｐマネジメント株式会社 | 電極箔の製造方法 |
| JP5692726B2 (ja) * | 2010-08-31 | 2015-04-01 | 国立大学法人 鹿児島大学 | アルミニウム薄膜の製造方法 |
| MX2022009755A (es) * | 2020-02-06 | 2023-01-11 | Saras Micro Devices Inc | Condensadores de láminas metálicas modificadas y métodos para fabricar los mismos. |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4895548A (ja) * | 1972-03-17 | 1973-12-07 | ||
| JPS6057693B2 (ja) * | 1979-05-29 | 1985-12-16 | 松下電器産業株式会社 | 金属酸化物コンデンサ |
| GB2056501A (en) * | 1979-08-09 | 1981-03-18 | Standard Telephones Cables Ltd | Porous metal films |
| US4453199A (en) | 1983-06-17 | 1984-06-05 | Avx Corporation | Low cost thin film capacitor |
| DE3852026T2 (de) * | 1987-07-30 | 1995-03-30 | Matsushita Electric Ind Co Ltd | Verfahren zur herstellung eines elektrolytischen kondensators. |
| JPH01119012A (ja) * | 1987-10-30 | 1989-05-11 | Marcon Electron Co Ltd | 固体電解コンデンサ |
| US5851871A (en) | 1987-12-23 | 1998-12-22 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing integrated capacitors in MOS technology |
| JP2764745B2 (ja) * | 1989-07-21 | 1998-06-11 | オムロン株式会社 | 混成回路基板およびその製造方法 |
| JP3155750B2 (ja) * | 1990-06-08 | 2001-04-16 | 日本ケミコン株式会社 | 電解コンデンサ用アルミニウム電極の製造方法 |
| JPH0444204A (ja) * | 1990-06-08 | 1992-02-14 | Nippon Chemicon Corp | 電解コンデンサ用アルミニウム電極 |
| DE4207368A1 (de) * | 1991-08-06 | 1993-02-11 | Biotronik Mess & Therapieg | Stimmulationselektrode |
| FR2688092B1 (fr) * | 1992-02-14 | 1994-04-15 | Traitement Metaux Alliages Sa | Feuille pour electrode de condensateur electrolytique et procede de fabrication. |
| US5357399A (en) * | 1992-09-25 | 1994-10-18 | Avx Corporation | Mass production method for the manufacture of surface mount solid state capacitor and resulting capacitor |
| US5589416A (en) | 1995-12-06 | 1996-12-31 | Lucent Technologies Inc. | Process for forming integrated capacitors |
| US6287673B1 (en) * | 1998-03-03 | 2001-09-11 | Acktar Ltd. | Method for producing high surface area foil electrodes |
| DE19817405A1 (de) * | 1998-04-20 | 1999-10-21 | Becromal Spa | Verfahren zur Herstellung einer Anode für elektrolytische Kondensatoren und so hergestellte Anoden |
| IT1307557B1 (it) * | 1999-04-14 | 2001-11-14 | Becromal Spa | Elettrodi per condensatori elettrolitici e loro processo difabbricazione mediante evaporazione sotto vuoto. |
-
2001
- 2001-02-22 IL IL141592A patent/IL141592A/en not_active IP Right Cessation
-
2002
- 2002-02-21 JP JP2002566510A patent/JP4390456B2/ja not_active Expired - Fee Related
- 2002-02-21 EP EP02700547A patent/EP1382048A4/en not_active Withdrawn
- 2002-02-21 WO PCT/IL2002/000140 patent/WO2002067278A2/en active Application Filing
- 2002-02-21 AU AU2002233612A patent/AU2002233612A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004524686A (ja) | 2004-08-12 |
| WO2002067278A2 (en) | 2002-08-29 |
| IL141592A0 (en) | 2002-03-10 |
| EP1382048A4 (en) | 2008-05-28 |
| WO2002067278A3 (en) | 2002-12-27 |
| EP1382048A2 (en) | 2004-01-21 |
| AU2002233612A1 (en) | 2002-09-04 |
| JP4390456B2 (ja) | 2009-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |