IL108762A - Methods for making group III-V compound semi-conductor devices - Google Patents

Methods for making group III-V compound semi-conductor devices

Info

Publication number
IL108762A
IL108762A IL10876294A IL10876294A IL108762A IL 108762 A IL108762 A IL 108762A IL 10876294 A IL10876294 A IL 10876294A IL 10876294 A IL10876294 A IL 10876294A IL 108762 A IL108762 A IL 108762A
Authority
IL
Israel
Prior art keywords
citric acid
concentration
solution
salt
region
Prior art date
Application number
IL10876294A
Other languages
English (en)
Other versions
IL108762A0 (en
Original Assignee
Watkins Johnson Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watkins Johnson Co filed Critical Watkins Johnson Co
Publication of IL108762A0 publication Critical patent/IL108762A0/xx
Publication of IL108762A publication Critical patent/IL108762A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H10P50/646—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
IL10876294A 1993-03-25 1994-02-24 Methods for making group III-V compound semi-conductor devices IL108762A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/037,074 US5374328A (en) 1993-03-25 1993-03-25 Method of fabricating group III-V compound

Publications (2)

Publication Number Publication Date
IL108762A0 IL108762A0 (en) 1994-05-30
IL108762A true IL108762A (en) 1995-11-27

Family

ID=21892303

Family Applications (1)

Application Number Title Priority Date Filing Date
IL10876294A IL108762A (en) 1993-03-25 1994-02-24 Methods for making group III-V compound semi-conductor devices

Country Status (6)

Country Link
US (2) US5374328A (de)
EP (1) EP0642425A4 (de)
JP (1) JP2871857B2 (de)
KR (1) KR950701582A (de)
IL (1) IL108762A (de)
WO (1) WO1994021474A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5405606A (en) * 1993-12-03 1995-04-11 Efh, Inc. Embalming composition and method
US5639343A (en) * 1995-12-13 1997-06-17 Watkins-Johnson Company Method of characterizing group III-V epitaxial semiconductor wafers incorporating an etch stop layer
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5652179A (en) * 1996-04-24 1997-07-29 Watkins-Johnson Company Method of fabricating sub-micron gate electrode by angle and direct evaporation
JP3097557B2 (ja) * 1996-05-20 2000-10-10 日本電気株式会社 半導体装置の製造方法
US6060402A (en) * 1998-07-23 2000-05-09 The Whitaker Corporation Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer
US6524899B1 (en) * 2000-09-21 2003-02-25 Trw Inc. Process for forming a large area, high gate current HEMT diode
US20070091956A1 (en) * 2003-01-23 2007-04-26 Yoshifumi Sato Semiconductor laser element and method of fabrication thereof
JP4089446B2 (ja) * 2003-01-23 2008-05-28 ソニー株式会社 半導体レーザ素子の製造方法
KR100567346B1 (ko) * 2004-03-23 2006-04-04 학교법인 포항공과대학교 ＡｌＧａＡｓ 에피층 식각액 및 이를 이용한 반도체소자의 제조 방법
CN109545681A (zh) * 2018-10-31 2019-03-29 中国科学院西安光学精密机械研究所 一种全光固体超快探测芯片的腐蚀方法
US12444610B2 (en) 2018-11-15 2025-10-14 Tokyo Electron Limited Methods for etching a substrate using a hybrid wet atomic layer etching process
US10982335B2 (en) * 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
US11437250B2 (en) * 2018-11-15 2022-09-06 Tokyo Electron Limited Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions
US12243752B2 (en) 2018-11-15 2025-03-04 Tokyo Electron Limited Systems for etching a substrate using a hybrid wet atomic layer etching process
US11915941B2 (en) 2021-02-11 2024-02-27 Tokyo Electron Limited Dynamically adjusted purge timing in wet atomic layer etching
US12506014B2 (en) 2021-10-19 2025-12-23 Tokyo Electron Limited Methods for non-isothermal wet atomic layer etching
US11802342B2 (en) 2021-10-19 2023-10-31 Tokyo Electron Limited Methods for wet atomic layer etching of ruthenium
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
US11866831B2 (en) 2021-11-09 2024-01-09 Tokyo Electron Limited Methods for wet atomic layer etching of copper
US12506011B2 (en) 2023-12-15 2025-12-23 Tokyo Electron Limited Methods for wet atomic layer etching of transition metal oxide dielectric materials

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436185A (en) * 1977-08-26 1979-03-16 Toshiba Corp Etching method of gaas system compound semiconductor crystal
PH23572A (en) * 1982-05-28 1989-09-11 Smithkline Diagnostics Inc Specimen test slide for occult blood testing
US4486536A (en) * 1982-05-28 1984-12-04 Smithkline Diagnostics, Inc. Specimen slide for occult blood testing
JPS6242532A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 化合物半導体の表面処理方法
US4835101A (en) * 1986-02-10 1989-05-30 Kallestad Diagnostics, Inc. Luminescent analyses with enhanced storage stability
NL8701184A (nl) * 1987-05-18 1988-12-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4914488A (en) * 1987-06-11 1990-04-03 Hitachi, Ltd. Compound semiconductor structure and process for making same
JPH01171279A (ja) * 1987-12-25 1989-07-06 Mitsubishi Monsanto Chem Co 半導体装置
US5041393A (en) * 1988-12-28 1991-08-20 At&T Bell Laboratories Fabrication of GaAs integrated circuits
JPH02206117A (ja) * 1989-02-06 1990-08-15 Yokogawa Electric Corp 半導体装置の製造方法
US4935377A (en) * 1989-08-01 1990-06-19 Watkins Johnson Company Method of fabricating microwave FET having gate with submicron length
JPH03160733A (ja) * 1989-11-17 1991-07-10 Sanyo Electric Co Ltd エピタキシャルウエハ
JPH04105319A (ja) * 1990-08-24 1992-04-07 Sony Corp 選択エッチング方法
US5215885A (en) * 1990-10-23 1993-06-01 Beckman Instruments, Inc. Stable two-part chromogen substrate
US5110765A (en) * 1990-11-30 1992-05-05 At&T Bell Laboratories Selective etch for GaAs-containing group III-V compounds
US5419808A (en) * 1993-03-19 1995-05-30 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors

Also Published As

Publication number Publication date
USRE36185E (en) 1999-04-06
JP2871857B2 (ja) 1999-03-17
EP0642425A4 (de) 1996-11-06
US5374328A (en) 1994-12-20
EP0642425A1 (de) 1995-03-15
KR950701582A (ko) 1995-04-28
WO1994021474A1 (en) 1994-09-29
JPH07503583A (ja) 1995-04-13
IL108762A0 (en) 1994-05-30

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Legal Events

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MM9K Patent not in force due to non-payment of renewal fees