IL108150A - Surface potential control in plasma processing of materials - Google Patents
Surface potential control in plasma processing of materialsInfo
- Publication number
- IL108150A IL108150A IL10815093A IL10815093A IL108150A IL 108150 A IL108150 A IL 108150A IL 10815093 A IL10815093 A IL 10815093A IL 10815093 A IL10815093 A IL 10815093A IL 108150 A IL108150 A IL 108150A
- Authority
- IL
- Israel
- Prior art keywords
- grid
- plasma
- plasma processing
- electrically conducting
- ion
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
- B29C2035/0872—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using ion-radiation, e.g. alpha-rays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
- B29C2035/0877—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using electron radiation, e.g. beta-rays
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/995,864 US5374456A (en) | 1992-12-23 | 1992-12-23 | Surface potential control in plasma processing of materials |
Publications (2)
Publication Number | Publication Date |
---|---|
IL108150A0 IL108150A0 (en) | 1994-04-12 |
IL108150A true IL108150A (en) | 1996-08-04 |
Family
ID=25542293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL10815093A IL108150A (en) | 1992-12-23 | 1993-12-22 | Surface potential control in plasma processing of materials |
Country Status (8)
Country | Link |
---|---|
US (1) | US5374456A (de) |
EP (1) | EP0603864B1 (de) |
JP (1) | JP2501770B2 (de) |
KR (1) | KR970002242B1 (de) |
CA (1) | CA2112178A1 (de) |
DE (1) | DE69319869T2 (de) |
IL (1) | IL108150A (de) |
MX (1) | MX9400100A (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354381A (en) * | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
CA2130167C (en) * | 1993-08-27 | 1999-07-20 | Jesse N. Matossian | Nondestructive determination of plasma processing treatment |
US5498290A (en) * | 1993-08-27 | 1996-03-12 | Hughes Aircraft Company | Confinement of secondary electrons in plasma ion processing |
US5672541A (en) * | 1995-06-14 | 1997-09-30 | Wisconsin Alumni Research Foundation | Ultra-shallow junction semiconductor device fabrication |
US5693376A (en) * | 1995-06-23 | 1997-12-02 | Wisconsin Alumni Research Foundation | Method for plasma source ion implantation and deposition for cylindrical surfaces |
US5653811A (en) | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
US5859404A (en) * | 1995-10-12 | 1999-01-12 | Hughes Electronics Corporation | Method and apparatus for plasma processing a workpiece in an enveloping plasma |
US5738768A (en) * | 1995-10-31 | 1998-04-14 | Caterpillar Inc. | Process for reducing particle defects in arc vapor deposition coatings |
CA2251796A1 (en) * | 1996-05-03 | 1997-11-13 | Minnesota Mining And Manufacturing Company | Method of making a porous abrasive article |
EP0912294B1 (de) * | 1996-05-03 | 2003-04-16 | Minnesota Mining And Manufacturing Company | Nichtgewebte schleifmittel |
JP4150077B2 (ja) * | 1996-05-03 | 2008-09-17 | スリーエム カンパニー | 研磨製品を製造する方法及び装置 |
DE19635736C2 (de) * | 1996-09-03 | 2002-03-07 | Saxonia Umformtechnik Gmbh | Diamantähnliche Beschichtung |
ATE256761T1 (de) * | 1997-04-18 | 2004-01-15 | Plasma Metal S A | Verfahren und ofen zum nitrieren |
AU2305199A (en) * | 1997-09-24 | 1999-05-03 | Regents Of The University Of California, The | Process for forming adherent coatings using plasma processing |
EP1143031A3 (de) * | 1997-12-15 | 2004-04-28 | Volkswagen AG | Plasmaborierung |
US6274459B1 (en) | 1998-02-17 | 2001-08-14 | Silicon Genesis Corporation | Method for non mass selected ion implant profile control |
US6300643B1 (en) | 1998-08-03 | 2001-10-09 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
US6224536B1 (en) | 1999-02-08 | 2001-05-01 | Advanced Cardiovascular Systems | Method for delivering radiation therapy to an intravascular site in a body |
US6458723B1 (en) | 1999-06-24 | 2002-10-01 | Silicon Genesis Corporation | High temperature implant apparatus |
US7309997B1 (en) | 2000-09-15 | 2007-12-18 | Varian Semiconductor Equipment Associates, Inc. | Monitor system and method for semiconductor processes |
DE10108456B4 (de) * | 2001-02-22 | 2004-08-26 | Christof Diener | Verfahren zur Oberflächenvorbehandlung |
US6734447B2 (en) * | 2002-08-13 | 2004-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electron filter for current implanter |
EP1677857A1 (de) * | 2003-10-31 | 2006-07-12 | Ventracor Limited | Verbesserte blutpumpe mit polymerbestandteilen |
CN1322163C (zh) * | 2004-11-05 | 2007-06-20 | 哈尔滨工业大学 | 绝缘材料零部件等离子体注入方法及其注入装置 |
US7993404B2 (en) * | 2006-03-29 | 2011-08-09 | Warsaw Orthopedic, Inc. | Transformable spinal implants and methods of use |
US7501945B2 (en) * | 2006-07-27 | 2009-03-10 | Lockheed Martin Corporation | System and method of simulation |
US8846516B2 (en) * | 2007-07-06 | 2014-09-30 | Micron Technology, Inc. | Dielectric charge-trapping materials having doped metal sites |
US8252388B2 (en) * | 2008-05-15 | 2012-08-28 | Southwest Research Institute | Method and apparatus for high rate, uniform plasma processing of three-dimensional objects |
DE102008027363B4 (de) | 2008-06-09 | 2018-04-26 | Meyer Burger (Germany) Ag | Vorrichtung zur Behandlung großvolumiger Substrate im Plasma und Verfahren zur Anwendung |
KR20110042051A (ko) * | 2008-06-11 | 2011-04-22 | 솔라 임플란트 테크놀로지스 아이엔씨. | 주입을 사용하여 솔라 셀의 제작 |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US8361856B2 (en) | 2010-11-01 | 2013-01-29 | Micron Technology, Inc. | Memory cells, arrays of memory cells, and methods of forming memory cells |
US8329567B2 (en) | 2010-11-03 | 2012-12-11 | Micron Technology, Inc. | Methods of forming doped regions in semiconductor substrates |
US8450175B2 (en) | 2011-02-22 | 2013-05-28 | Micron Technology, Inc. | Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith |
US8569831B2 (en) | 2011-05-27 | 2013-10-29 | Micron Technology, Inc. | Integrated circuit arrays and semiconductor constructions |
JP6068491B2 (ja) | 2011-11-08 | 2017-01-25 | インテヴァック インコーポレイテッド | 基板処理システムおよび基板処理方法 |
US9036391B2 (en) | 2012-03-06 | 2015-05-19 | Micron Technology, Inc. | Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells |
US9006060B2 (en) | 2012-08-21 | 2015-04-14 | Micron Technology, Inc. | N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors |
US9129896B2 (en) | 2012-08-21 | 2015-09-08 | Micron Technology, Inc. | Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors |
US9478550B2 (en) | 2012-08-27 | 2016-10-25 | Micron Technology, Inc. | Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors |
US9095907B2 (en) | 2012-09-17 | 2015-08-04 | Qmotion Incorporated | Drapery tube incorporating batteries within the drapery tube, with a stop for facilitating the loading and unloading of the batteries |
WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
US9111853B2 (en) | 2013-03-15 | 2015-08-18 | Micron Technology, Inc. | Methods of forming doped elements of semiconductor device structures |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
US9017526B2 (en) * | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
JP2016196696A (ja) * | 2015-04-06 | 2016-11-24 | 学校法人トヨタ学園 | 窒化処理装置及び窒化処理方法 |
WO2024112992A1 (de) * | 2022-11-28 | 2024-06-06 | Gruenwald Laboratories Gmbh | Verfahren und vorrichtung zur bereitstellung eines plasmas zur plasmabehandlung |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3069286A (en) * | 1958-08-07 | 1962-12-18 | Du Pont | Preparation of metallized perfluorocarbon resins |
US3583361A (en) * | 1969-12-18 | 1971-06-08 | Atomic Energy Commission | Ion beam deposition system |
JPH0735574B2 (ja) * | 1985-05-31 | 1995-04-19 | 豊田合成株式会社 | スパッタリング装置 |
JPS6270572A (ja) * | 1985-09-24 | 1987-04-01 | Nippon Kokan Kk <Nkk> | イオンビ−ムスパツタリング装置 |
IT1207445B (it) * | 1986-12-23 | 1989-05-17 | Sgs Microelettronica Spa | Procedimento e dispositivo per deposizione chimica da fase vapore attivata mediante plasma. |
US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
JPS63252341A (ja) * | 1987-04-09 | 1988-10-19 | Nec Corp | グリツド |
JPS6454673A (en) * | 1987-08-24 | 1989-03-02 | Japan Storage Battery Co Ltd | Lithium battery |
US4982696A (en) * | 1988-01-08 | 1991-01-08 | Ricoh Company, Ltd. | Apparatus for forming thin film |
JP2549894B2 (ja) * | 1988-07-29 | 1996-10-30 | 日本特殊陶業株式会社 | 高温超伝導セラミック薄膜の形成方法 |
US5133849A (en) * | 1988-12-12 | 1992-07-28 | Ricoh Company, Ltd. | Thin film forming apparatus |
JPH02285070A (ja) * | 1989-04-26 | 1990-11-22 | Ricoh Co Ltd | 薄膜形成装置 |
US5185067A (en) * | 1989-07-10 | 1993-02-09 | Tdk Corporation | Process for manufacturing diamond-like thin film |
JP2989198B2 (ja) * | 1989-08-23 | 1999-12-13 | ティーディーケイ株式会社 | ダイヤモンド様薄膜の製造方法及び装置 |
JPH03153866A (ja) * | 1989-11-10 | 1991-07-01 | Ricoh Co Ltd | 薄膜形成装置 |
JPH03138370A (ja) * | 1989-10-23 | 1991-06-12 | Toshiba Corp | 薄膜製造装置 |
JPH04228570A (ja) * | 1990-08-03 | 1992-08-18 | Ricoh Co Ltd | 巻取式薄膜形成装置 |
US5078847A (en) * | 1990-08-29 | 1992-01-07 | Jerry Grosman | Ion plating method and apparatus |
-
1992
- 1992-12-23 US US07/995,864 patent/US5374456A/en not_active Expired - Lifetime
-
1993
- 1993-12-22 DE DE69319869T patent/DE69319869T2/de not_active Expired - Lifetime
- 1993-12-22 CA CA002112178A patent/CA2112178A1/en not_active Abandoned
- 1993-12-22 EP EP93120724A patent/EP0603864B1/de not_active Expired - Lifetime
- 1993-12-22 IL IL10815093A patent/IL108150A/en not_active IP Right Cessation
- 1993-12-23 KR KR1019930029363A patent/KR970002242B1/ko not_active IP Right Cessation
- 1993-12-24 JP JP5328444A patent/JP2501770B2/ja not_active Expired - Lifetime
-
1994
- 1994-01-03 MX MX9400100A patent/MX9400100A/es not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0603864B1 (de) | 1998-07-22 |
CA2112178A1 (en) | 1994-06-24 |
KR970002242B1 (ko) | 1997-02-26 |
EP0603864A2 (de) | 1994-06-29 |
EP0603864A3 (de) | 1996-01-31 |
US5374456A (en) | 1994-12-20 |
IL108150A0 (en) | 1994-04-12 |
JP2501770B2 (ja) | 1996-05-29 |
KR940017966A (ko) | 1994-07-27 |
JPH073453A (ja) | 1995-01-06 |
DE69319869T2 (de) | 1999-04-15 |
DE69319869D1 (de) | 1998-08-27 |
MX9400100A (es) | 1994-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
RH | Patent void |